scholarly journals Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Abderrahime Sekkat ◽  
Viet Huong Nguyen ◽  
César Arturo Masse de La Huerta ◽  
Laetitia Rapenne ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Shallow Acceptor ◽  
Layer Deposition ◽  
Type Semiconductor ◽  
Cost Efficient ◽  
P Type ◽  
Deposited Films

AbstractCu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.

Photoassisted Electrodeposition of Cuprous Oxide Thin Films

2021 ◽  
Vol 105 (1) ◽  
pp. 441-452
Author(s):  
Katharina Mairhofer ◽  
Bettina Kipper-Pires ◽  
Gerhard Leitner ◽  
Guenter Fafilek
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Sem Analysis ◽  
Sufficient Energy ◽  
Tenfold Increase ◽  
Absorption Of Light ◽  
Additional Illumination ◽  
Type Semiconductor ◽  
P Type ◽  
Deposited Films

Well-defined cuprous oxide (Cu2O) thin films can be electrodeposited from an electrolyte containing copper (II) sulfate, lactic acid and sodium hydroxide. As Cu2O is a p-type semiconductor, it is possible to accelerate the process through illumination with light of sufficient energy (>2.1eV). Cyclic voltammetry and transient potentiostatic measurements were performed in a three-electrode setup with copper metalized wafers as a working electrode. Illumination was performed through the electrolyte, therefore absorption of light by the electrolyte had to be taken into consideration. Potentiostatic measurements with a blue LED as a light source have shown an tenfold increase in layer thickness in comparison to depositions without additional illumination. The deposited films were investigated with SEM analysis.

scholarly journals Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2857
Author(s):  
Steponas Ašmontas ◽  
Maksimas Anbinderis ◽  
Jonas Gradauskas ◽  
Remigijus Juškėnas ◽  
Konstantinas Leinartas ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Tandem Solar Cells ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Niobium Doped ◽  
Specific Contact ◽  
Carrier Tunneling ◽  
P Type ◽  
Deposited Films

Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

2014 ◽  
Vol 26 (21) ◽  
pp. 6088-6091 ◽  
Author(s):  
Jeong Hwan Han ◽  
Yoon Jang Chung ◽  
Bo Keun Park ◽  
Seong Keun Kim ◽  
Hyo-Suk Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

scholarly journals A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Sean Barry ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Bandgap Tuning of High Mobility Magnetron Sputtered Copper (I) Oxide Thin Films for Perovskite Solar Cell Applications

2021 ◽  
Vol 5 (1) ◽  
pp. 51-54
Author(s):  
Mohammad Istiaque Hossain ◽  
Brahim Aïssa ◽  
Ali Bentouaf ◽  
Said A. Mansour
Keyword(s):  
Thin Films ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Hole Transport ◽  
Transport Layer ◽  
Morphological Properties ◽  
Charge Carrier Density ◽  
Cu2o Thin Films ◽  
P Type ◽  
Deposited Films

We report on the successful growth optimization of an inorganic p-type copper oxide (Cu2O) thin films for various energy applications. First, Cu2O thin films of a typical thickness of 100 nm are deposited on fluorine-doped tin oxide (FTO) coated glass substrates by DC-reactive magnetron sputtering, followed by their in-depth characterization with different techniques, including scanning electron and atomic force microscopies, UV-Vis, X-ray diffraction and photoelectron spectroscopies, to probe their structural, optical, and morphological properties. Surface topology analysis revealed homogeneous, compact, and uniform sputtered deposited films. The as deposited films layers have shown a preferential crystal orientation of (111) and a stoichiometry of CuO, at the surface, which is believed to be mainly due to the oxidization effect of the non-capsulated surface, while a short-duration argon etching (~ 5 s) has revealed the growth of Cu2O films stoichiometry. Finally, during the reactive plasma deposition, films were grown under nitrogen gas flow to improve their hole-mobility, followed by a systematic annealing at various temperatures ranging from 100 to 250 °C to improve their crystalline structure. Hall effect measurement confirmed that the Cu2O thin film are p-type, with extremely high electronic properties, including an electrical conductivity of 2.6 × 102 S/cm, a hole mobility of about 30 cm2/Vs and a charge carrier density around 5 × 1019 cm-3, making them a serious candidate for a hole transport layer in perovskite solar cells.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Wafer-Scale Synthesis of WS2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Hanjie Yang ◽  
Yang Wang ◽  
Xingli Zou ◽  
Rongxu Bai ◽  
Zecheng Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Cycle Number ◽  
Wafer Scale ◽  
Layer Deposition ◽  
Nb Doping ◽  
P Type

Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS2 films and in situ Nb-doped p-type WS2 films were synthesized through atomic layer deposition (ALD) on 8-inch α-Al2O3/Si wafers, 2-inch sapphire, and 1 cm2 GaN substrate pieces. The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing. WS2 n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes. X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements confirmed the effective substitutional doping with Nb. The on/off ratio and electron mobility of WS2 n-FET are as high as 105 and 6.85 cm2 V-1 s-1, respectively. In WS2 p-FET with 15-cycle Nb doping, the on/off ratio and hole mobility are 10 and 0.016 cm2 V-1 s-1, respectively. The p-n structure based on n- and p- type WS2 films was proved with a 104 rectifying ratio. The realization of controllable in situ Nb-doped WS2 films paved a way for fabricating wafer-scale complementary WS2 FETs.

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