scholarly journals Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2857
Author(s):  
Steponas Ašmontas ◽  
Maksimas Anbinderis ◽  
Jonas Gradauskas ◽  
Remigijus Juškėnas ◽  
Konstantinas Leinartas ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Tandem Solar Cells ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Niobium Doped ◽  
Specific Contact ◽  
Carrier Tunneling ◽  
P Type ◽  
Deposited Films

Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

2014 ◽  
Vol 1699 ◽  
Author(s):  
Per Lindberg ◽  
Vincent Quemener ◽  
Kristin Bergum ◽  
Jiantuo Gan ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Deep Level ◽  
Atomic Layer ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Post Deposition

ABSTRACTAluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

scholarly journals Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Abderrahime Sekkat ◽  
Viet Huong Nguyen ◽  
César Arturo Masse de La Huerta ◽  
Laetitia Rapenne ◽  
Daniel Bellet ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Hole Mobility ◽  
Atomic Layer ◽  
Shallow Acceptor ◽  
Layer Deposition ◽  
Type Semiconductor ◽  
Cost Efficient ◽  
P Type ◽  
Deposited Films

AbstractCu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.

An Investigation of Silicon Oxide Thin Film by Atomic Layer Deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Joo-Hyeon Lee ◽  
Chang-Hee Han ◽  
Un-Jung Kim ◽  
Chong-Ook Park ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
P Type ◽  
Wet Etch ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTSiO2 thin films were prepared on p-type Si (100) substrates by atomic layer deposition (ALD) using SiH2Cl2 and O3(1.5 at.%)/O2 as precursors at 300. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at about 0.35 nm/cycle with the reactant exposures of more than 3.6×109L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. The composition of the deposited film also varied with O3/O2 exposure at a fixed SiH2Cl2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the physical and electrical characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. In spite of low process temperature, the SiO2 film prepared by the ALD method was in wet etch rate, surface roughness, leakage current and breakdown voltage superior to that by other several CVD methods.

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals Growth without Postannealing of Monoclinic VO2 Thin Film by Atomic Layer Deposition Using VCl4 as Precursor

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 431 ◽  
Author(s):  
Wen-Jen Lee ◽  
Yong-Han Chang
Keyword(s):  
Vanadium Dioxide ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Temperature Dependent ◽  
Vanadium Compounds ◽  
Multifunctional Material ◽  
Layer Deposition ◽  
Vanadium Tetrachloride ◽  
First Time ◽  
Deposited Films

Vanadium dioxide (VO2) is a multifunctional material with semiconductor-to-metal transition (SMT) property. Organic vanadium compounds are usually employed as ALD precursors to grow VO2 films. However, the as-deposited films are reported to have amorphous structure with no significant SMT property, therefore a postannealing process is necessary for converting the amorphous VO2 to crystalline VO2. In this study, an inorganic vanadium tetrachloride (VCl4) is used as an ALD precursor for the first time to grow VO2 films. The VO2 film is directly crystallized and grown on the substrate without any postannealing process. The VO2 film displays significant SMT behavior, which is verified by temperature-dependent Raman spectrometer and four-point-probing system. The results demonstrate that the VCl4 is suitably employed as a new ALD precursor to grow crystallized VO2 films. It can be reasonably imagined that the VCl4 can also be used to grow various directly crystallized vanadium oxides by controlling the ALD-process parameters.

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

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