scholarly journals Sub-10 nm transparent all-around-gated ambipolar ionic field effect transistor

Nanoscale ◽  
2015 ◽  
Vol 7 (3) ◽  
pp. 936-946 ◽  
Author(s):  
Seung-Hyun Lee ◽  
Hyomin Lee ◽  
Tianguang Jin ◽  
Sungmin Park ◽  
Byung Jun Yoon ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ionic Field ◽  
Wide Range ◽  
Effect Transistor

A versatile ionic field effect transistor (IFET) which has an ambipolar function for manipulating molecules regardless of their polarity was developed for the operation at a wide range of electrolytic concentrations (10−5 M–1 M).

scholarly journals Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3735 ◽  
Author(s):  
Kęstutis Ikamas ◽  
Ignas Nevinskas ◽  
Arūnas Krotkus ◽  
Alvydas Lisauskas
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cryogenic Cooling ◽  
Thz Radiation ◽  
Gate Bias ◽  
Large Signal ◽  
Wide Range ◽  
Effect Transistor ◽  
Thz Power

We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage V th = 445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

scholarly journals Detection of Immunoglobulin E with a Graphene-Based Field-Effect Transistor Aptasensor

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Yi Lan ◽  
Sidra Farid ◽  
Xenia Meshik ◽  
Ke Xu ◽  
Min Choi ◽  
...  
Keyword(s):  
Field Effect ◽  
Biomedical Applications ◽  
Field Effect Transistor ◽  
High Selectivity ◽  
Immunoglobulin E ◽  
Dna Aptamer ◽  
Conductive Substrate ◽  
Wide Range ◽  
Target Molecules ◽  
Effect Transistor

DNA aptamers have the ability to bind to target molecules with high selectivity and therefore have a wide range of clinical applications. Herein, a graphene substrate functionalized with a DNA aptamer is used to sense immunoglobulin E. The graphene serves as the conductive substrate in this field-effect-transistor-like (FET-like) structure. A voltage probe in an electrolyte is used to sense the presence of IgE as a result of the changes in the charge distribution that occur when an IgE molecule binds to the IgE DNA-based aptamer. Because IgE is an antibody associated with allergic reactions and immune deficiency-related diseases, its detection is of utmost importance for biomedical applications.

Progress toward a solid-state ionic field effect transistor

2012 ◽  
Vol 111 (7) ◽  
pp. 074511 ◽  
Author(s):  
Ann M. Deml ◽  
Annette L. Bunge ◽  
Michael A. Reznikov ◽  
Alex Kolessov ◽  
Ryan P. O’Hayre
Keyword(s):  
Solid State ◽  
Solid State Ionic ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ionic Field ◽  
Effect Transistor ◽  
State Ionic

scholarly journals All-oxide-based high-mobility planar PN junctions and tunnelling field effect transistor

2021 ◽  
Author(s):  
Le Duc Anh ◽  
Theodorus Wijaya ◽  
Shingo Kaneta ◽  
Munetoshi Seki ◽  
Hitoshi Tabata ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Substrate Surface ◽  
High Mobility ◽  
Oxide Materials ◽  
Simple Method ◽  
Wide Range ◽  
Effect Transistor ◽  
Pn Junctions

Abstract Electronics based on perovskite oxides, a class of materials with unparalleled wealth of physical functionalities, possesses high potential to go beyond the present semiconductor-based technologies. Towards universal and scalable oxide-based electronics, an important milestone is to realise both N- and P-type conduction regions – the two fundamental blocks of most of electronic devices – on the same oxide substrate surface. However, in contrast to the case of conventional semiconductors, the formation of planar PN junctions is highly challenging in oxide materials owing to difficulties in carrier doping. Here, we show that high-mobility PN junctions can be formed on a surface of SrTiO3 (STO), one of the most versatile oxide materials, in a robust and low-cost manner by simply depositing Angstrom-thin metal layers on top of an STO substrate near room temperature. Furthermore, by forming planar N-P-N junctions, we successfully demonstrate a new type of oxide-based tunnelling field effect transistor (TFET), which enables an extremely sharp switching with a subthreshold swing value S ~ 38 mV/dec and a large current ON/OFF ratio of 108. This high-performance FET operation is obtained by a new mechanism where a gate voltage strongly modulates the tunnelling probability through the depletion layers at the PN interfaces, utilising the unique strong nonlinear electric-field dependence of the permittivity of STO. Our simple method for selectively forming P and N-type regions monolithically on STO is potentially applicable to a wide range of oxide-based electronic systems, from single devices to integrated circuits, and even to flexible electronics.

scholarly journals The active modulation of drug release by an ionic field effect transistor for an ultra-low power implantable nanofluidic system

Nanoscale ◽  
2016 ◽  
Vol 8 (44) ◽  
pp. 18718-18725 ◽  
Author(s):  
Giacomo Bruno ◽  
Giancarlo Canavese ◽  
Xuewu Liu ◽  
Carly S. Filgueira ◽  
Adriano Sacco ◽  
...  
Keyword(s):  
Drug Release ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ultra Low Power ◽  
Ionic Field ◽  
Effect Transistor ◽  
Nanofluidic System

scholarly journals Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Unit Area ◽  
Gain Control ◽  
Oxide Semiconductor ◽  
Wide Range ◽  
Effect Transistor ◽  
Long Channel

Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET) is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET) channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL) effects in silicon MOSFET while sustaining the same unit area at higher current density.

scholarly journals Predicting Future Prospects of Aptamers in Field-Effect Transistor Biosensors

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 680 ◽  
Author(s):  
Cao-An Vu ◽  
Wen-Yih Chen
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Specificity ◽  
Label Free ◽  
Sensing Technology ◽  
Wide Range ◽  
Label Free Detection ◽  
Effect Transistor

Aptamers, in sensing technology, are famous for their role as receptors in versatile applications due to their high specificity and selectivity to a wide range of targets including proteins, small molecules, oligonucleotides, metal ions, viruses, and cells. The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. However, their combination in this field is challenged by several factors. Recent advances in the discovery of aptamers and studies of Field-Effect Transistor (FET) aptasensors overcome these limitations and potentially expand the dominance of aptamers in the biosensor market.

scholarly journals Theoretical Modeling of a Photodetector Based on Ballistic Carbone Nanotube with VHDL-AMS

2015 ◽  
Vol 55 ◽  
pp. 112-118
Author(s):  
M. Troudi ◽  
A. Mahmoudi ◽  
N. Sghaier ◽  
A. Soltani
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Noise ◽  
High Quantum Efficiency ◽  
Highly Sensitive ◽  
Wide Range ◽  
Effect Transistor ◽  
Simulation Results ◽  
Photo Detection ◽  
Low Capacitance

In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool to investigate the effects of photoexcitation on Ids-Vds characteristics of the photo-CNTFET. We have present results obtained after variation of power illumination and light beam wavelength.

Field effect transistor with thin AlOxNy film as gate dielectric

2020 ◽  
Vol 37 (2) ◽  
pp. 103-107
Author(s):  
Piotr Firek ◽  
Jakub Szarafiński ◽  
Grzegorz Głuszko ◽  
Jan Szmidt
Keyword(s):  
Magnetron Sputtering ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Etching Process ◽  
Content Type ◽  
Wide Range ◽  
Effect Transistor

Purpose The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide range of applications in high power, high temperature and high frequency electronics, optics and sensors and even acoustic devices. Design/methodology/approach The basic subject of this study is n-channel transistors manufactured using silicon with 50-nm-thick AlOxNy films deposited on a silicon dioxide buffer layer via magnetron sputtering in which the gate dielectric was etched with wet solutions and/or dry plasma mixtures. Furthermore, the output, transfer and charge pumping (CP) characteristics were measured and compared for all modifications of the etching process. Findings An electrical measurement of MISFETs with AlOxNy gate dielectrics was conducted to plot the current-voltage and CP characteristics and examine the influence of the etching method on MISFET parameters. Originality/value In this report, a flat band and threshold voltage and the density of interface traps were determined to evaluate and improve an AlOxNy-based MISFET performance toward highly sensitive field effect transistors for hydrogen detection by applying a Pd-based nanocrystalline layer. The sensitivity of the detectors was highly correlated with the quality of the etching process of the gate dielectrics.

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