Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

Nanoscale ◽  
2015 ◽  
Vol 7 (8) ◽  
pp. 3694-3702 ◽  
Author(s):  
Boris N. Feigelson ◽  
Victor M. Bermudez ◽  
Jennifer K. Hite ◽  
Zachary R. Robinson ◽  
Virginia D. Wheeler ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spectroscopic Characterization ◽  
Metal Substrates

scholarly journals Comprehensive Electrostatic Modeling of Exposed Quantum Dots in Graphene/Hexagonal Boron Nitride Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1154
Author(s):  
Eberth A. Quezada-López ◽  
Zhehao Ge ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Frédéric Joucken ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Local Density ◽  
Hexagonal Boron Nitride ◽  
Tight Binding ◽  
Spectroscopic Characterization ◽  
Scanning Tunneling ◽  
Klein Tunneling ◽  
Electrostatic Modeling

Recent experimental advancements have enabled the creation of tunable localized electrostatic potentials in graphene/hexagonal boron nitride (hBN) heterostructures without concealing the graphene surface. These potentials corral graphene electrons yielding systems akin to electrostatically defined quantum dots (QDs). The spectroscopic characterization of these exposed QDs with the scanning tunneling microscope (STM) revealed intriguing resonances that are consistent with a tunneling probability of 100% across the QD walls. This effect, known as Klein tunneling, is emblematic of relativistic particles, underscoring the uniqueness of these graphene QDs. Despite the advancements with electrostatically defined graphene QDs, a complete understanding of their spectroscopic features still remains elusive. In this study, we address this lapse in knowledge by comprehensively considering the electrostatic environment of exposed graphene QDs. We then implement these considerations into tight binding calculations to enable simulations of the graphene QD local density of states. We find that the inclusion of the STM tip’s electrostatics in conjunction with that of the underlying hBN charges reproduces all of the experimentally resolved spectroscopic features. Our work provides an effective approach for modeling the electrostatics of exposed graphene QDs. The methods discussed here can be applied to other electrostatically defined QD systems that are also exposed.

Characterization of Hexagonal Boron Nitride Powders

2001 ◽  
Vol 383 ◽  
pp. 185-190
Author(s):  
P.J. Sánchez-Soto ◽  
A. Ruiz-Conde ◽  
M.C. Jiménez de Haro ◽  
J.Ma Martínez-Blanes ◽  
G. Colón
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride

scholarly journals Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

2017 ◽  
Vol 659 ◽  
pp. 31-42 ◽  
Author(s):  
P.C. Mende ◽  
Q. Gao ◽  
A. Ismach ◽  
H. Chou ◽  
M. Widom ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron ◽  
Nitride Layers

scholarly journals Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

2014 ◽  
Vol 403 ◽  
pp. 110-113 ◽  
Author(s):  
J.H. Edgar ◽  
T.B. Hoffman ◽  
B. Clubine ◽  
M. Currie ◽  
X.Z. Du ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystals ◽  
Hexagonal Boron Nitride ◽  
Metal Flux

Mechanical characterization of hexagonal boron nitride nanocomposites: A multiscale finite element prediction

2017 ◽  
Vol 52 (16) ◽  
pp. 2229-2241 ◽  
Author(s):  
Konstantinos N Spanos ◽  
Nick K Anifantis
Keyword(s):  
Finite Elements ◽  
Boron Nitride ◽  
Load Transfer ◽  
Hexagonal Boron Nitride ◽  
Matrix Material ◽  
The Matrix ◽  
Multiscale Finite Element ◽  
Two Phases ◽  
Good Agreement

In this study, a calculation of the elastic mechanical properties of composite materials reinforced by boron nitride nanosheets is taking place, following the finite elements approach. Composites are specifically composed of two phases of materials, the matrix material and the reinforcing phase, here, consisting of boron nitride monolayers. The simulation of these two materials as well as the interface between them were made in accordance with the micromechanics theory, examining a representative volume element. Specifically, the matrix material is considered as continuous medium and the reinforcing phase, based on its atomistic microstructure, is considered as a discrete medium and was simulated through spring-based finite elements. Something similar occurred with the simulation of the interface region, which is responsible for the load transfer between the two materials. The results of the method were compared with data from other studies and showed good agreement.

scholarly journals Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sung Kyu Jang ◽  
Jiyoun Youn ◽  
Young Jae Song ◽  
Sungjoo Lee
Keyword(s):  
Boron Nitride ◽  
Gate Dielectric ◽  
Hexagonal Boron Nitride ◽  
Synthesis And Characterization
Sign in / Sign up

Export Citation Format

Share Document