Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si3N4 nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (43) ◽  
pp. 34251-34256 ◽  
Author(s):  
Y. C. Dou ◽  
X. Y. Qin ◽  
D. Li ◽  
Y. Y. Li ◽  
H. X. Xin ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Amorphous Si ◽  
Amorphous Si3n4

Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si3N4 (a-Si3N4) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

Transport properties and enhanced thermoelectric performance of aluminum doped Cu3SbSe4

RSC Advances ◽  
2015 ◽  
Vol 5 (40) ◽  
pp. 31399-31403 ◽  
Author(s):  
Yuanyue Li ◽  
Xiaoying Qin ◽  
Di Li ◽  
Xiyu Li ◽  
Yongfei Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Thermoelectric Performance ◽  
Temperature Range

The electrical transport and thermoelectric properties of Cu3Sb1−xAlxSe4 (x = 0, 0.01, 0.02 and 0.03) compounds are investigated in the temperature range of 300–600 K.

A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance

2019 ◽  
Vol 126 (22) ◽  
pp. 225105 ◽  
Author(s):  
Raveena Gupta ◽  
Baljinder Kaur ◽  
Jesús Carrete ◽  
Chandan Bera
Keyword(s):  
Theoretical Model ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance

scholarly journals Preparation and Thermoelectric Properties of Graphite/poly(3,4-ethyenedioxythiophene) Nanocomposites

Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Oxidative Polymerization ◽  
Polymerization Process ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Content

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.

Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering

2018 ◽  
Vol 6 (15) ◽  
pp. 6493-6502 ◽  
Author(s):  
Rui Chen ◽  
Pengfei Qiu ◽  
Binbin Jiang ◽  
Ping Hu ◽  
Yiming Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Configurational Entropy ◽  
Thermoelectric Performance ◽  
High Symmetry ◽  
Type Compound

Via introducing Te into the argyrodite-type compound Cu7PSe6, the configurational entropy is increased yielding the significantly enhanced thermoelectric performance.

scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

scholarly journals Effect of band structure adjustment based of Cu site on the thermoelectric properties of BiCuSeO

2021 ◽  
Author(s):  
Bo Feng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
First Principles Calculation ◽  
Temperature Range ◽  
Ti Doping

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

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