Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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The Study of p-n and Schottky Junction for Magnetodiode

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.663 ◽

2011 ◽

Vol 378-379 ◽

pp. 663-667 ◽

Cited By ~ 2

Author(s):

Toempong Phetchakul ◽

Wittaya Luanatikomkul ◽

Chana Leepattarapongpan ◽

E. Chaowicharat ◽

Putapon Pengpad ◽

...

Keyword(s):

Magnetic Field ◽

Electrical Properties ◽

Simulation Model ◽

Hall Effect ◽

Schottky Junction ◽

Field Sensitivity ◽

Field Response ◽

Type Semiconductor ◽

Simulation Results ◽

P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Applied Physics Letters ◽

10.1063/1.4869151 ◽

2014 ◽

Vol 104 (11) ◽

pp. 111905 ◽

Cited By ~ 51

Author(s):

Hoang-Phuong Phan ◽

Dzung Viet Dao ◽

Philip Tanner ◽

Li Wang ◽

Nam-Trung Nguyen ◽

...

Keyword(s):

Single Crystalline ◽

P Type

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P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.10.006 ◽

2016 ◽

Vol 100 ◽

pp. 468-473 ◽

Cited By ~ 1

Author(s):

Zhiyuan Zhang ◽

Jingyun Huang ◽

Shanshan Chen ◽

Xinhua Pan ◽

Lingxiang Chen ◽

...

Keyword(s):

Annealing Process ◽

Zno Films ◽

Single Crystalline ◽

P Type

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Orientation dependence of twinning in single crystalline CoCrFeMnNi high-entropy alloy

Materials Science and Engineering A ◽

10.1016/j.msea.2017.08.065 ◽

2017 ◽

Vol 705 ◽

pp. 176-181 ◽

Cited By ~ 28

Author(s):

I.V. Kireeva ◽

Yu.I. Chumlyakov ◽

Z.V. Pobedennaya ◽

I.V. Kuksgausen ◽

I. Karaman

Keyword(s):

Orientation Dependence ◽

High Entropy Alloy ◽

Single Crystalline ◽

High Entropy

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Performance deterioration of p-type single crystalline silicon solar modules affected by potential induced degradation in photovoltaic power plant

Microelectronics Reliability ◽

10.1016/j.microrel.2017.03.017 ◽

2017 ◽

Vol 72 ◽

pp. 18-23 ◽

Cited By ~ 14

Author(s):

Hong Yang ◽

Fumei Wang ◽

He Wang ◽

Jipeng Chang ◽

Dengyuan Song ◽

...

Keyword(s):

Power Plant ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Photovoltaic Power ◽

Performance Deterioration ◽

P Type

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Front Side Metallization of n- and p-Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance

Journal of Electronic Materials ◽

10.1007/s11664-016-4459-8 ◽

2016 ◽

Vol 45 (6) ◽

pp. 2656-2661 ◽

Cited By ~ 3

Author(s):

Benjamin Willsch ◽

Praveen Kumar ◽

Oliver Eibl

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Series Resistance ◽

Front Side ◽

Temperature Dependent ◽

Single Crystalline ◽

Si Solar Cells ◽

Dependent Series ◽

P Type

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PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

Canadian Journal of Physics ◽

10.1139/p57-010 ◽

1957 ◽

Vol 35 (1) ◽

pp. 91-97 ◽

Cited By ~ 8

Author(s):

J. S. Blakemore

Keyword(s):

Electrical Conductivity ◽

Hall Effect ◽

Indium Antimonide ◽

Impurity Concentration ◽

Optical Data ◽

Type Specimens ◽

Large Gradient ◽

Gallium Indium Antimonide ◽

P Type ◽

Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

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