Solution-based Ag-doped ZnSe thin films with tunable electrical and optical properties

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

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Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18913 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1971-1977

Author(s):

Jihye Kang ◽

Dongsu Park ◽

Donghun Lee ◽

Masao Kamiko ◽

Sung-Jin Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Multilayer Structure ◽

Laser Annealing ◽

Transparent Conducting Oxide ◽

Sol Gel ◽

Electrical And Optical Properties ◽

Vis Spectroscopy ◽

Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

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Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

MRS Proceedings ◽

10.1557/proc-369-401 ◽

1994 ◽

Vol 369 ◽

Author(s):

C. Zhang ◽

H. Deng ◽

J. Varon ◽

B. Abeles ◽

Y. Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Activation Energy ◽

Electrical Conductivity ◽

Optical Properties ◽

Optical Absorption ◽

Laser Deposition ◽

Electrical And Optical Properties ◽

Thermally Activated ◽

Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

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Size-dependent structural, electrical and optical properties of nanostructured iron selenide thin films deposited by Chemical Bath Deposition Method

Solid State Sciences ◽

10.1016/j.solidstatesciences.2012.10.021 ◽

2013 ◽

Vol 16 ◽

pp. 134-142 ◽

Cited By ~ 20

Author(s):

Ashok U. Ubale ◽

Yogesh S. Sakhare ◽

Monali V. Bhute ◽

Milind R. Belkhedkar ◽

Arvind Singh

Keyword(s):

Thin Films ◽

Optical Properties ◽

Chemical Bath Deposition ◽

Chemical Bath Deposition Method ◽

Deposition Method ◽

Electrical And Optical Properties ◽

Iron Selenide ◽

Size Dependent

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Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-005-0543-1 ◽

2005 ◽

Vol 16 (5) ◽

pp. 263-268 ◽

Cited By ~ 24

Author(s):

Al-Mamun ◽

A. B. M. O. Islam ◽

A. H. Bhuiyan

Keyword(s):

Thin Films ◽

Optical Properties ◽

Chemical Bath Deposition ◽

Copper Selenide ◽

Deposition Technique ◽

Electrical And Optical Properties ◽

Chemical Bath Deposition Technique

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Effect of Annealing Temperature and Time on the Optical Properties of SnS Thin Films Prepared by Chemical Bath Deposition

International Journal for Innovation Education and Research ◽

10.31686/ijier.vol1.iss2.108 ◽

2013 ◽

Vol 1 (2) ◽

pp. 121-130

Author(s):

J.I Onwuemeka ◽

F.M Ezike ◽

N.C Nwulu

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Chemical Bath Deposition ◽

Complexing Agent ◽

Rutherford Back Scattering ◽

Double Beam ◽

Two Samples ◽

Sns Thin Films

A research on the deposition and Characterization of SnS Thin Films by Chemical Bath Deposition Technique using Ammonia (NH3) as a complexing agent. Thin film of Tin (II) sulphide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 3hours and 1hour. The optical properties of the film were measured using Double Beam UV- Spectrophotometer with serial number UV061514, Energy dispersive X-ray florescence (EDXRF) determines the compositions together with Rutherford Back Scattering (RBS) analysis revealed that thin films have percentage compositions of the elements (Sn/S, 50.1/49.9 for 3hours and Sn/S, 50.4/49.6 for 1hour) and their thicknesses are 100nm for 3hours and 150nm for 1hour. It was found that SnS thin film exhibits p-type conduction. Optical band gap values of direct and indirect transitions are estimated to be 1.98eV to 2.01eV and 1.82eV to 1.98eV for the two samples respectively. The other optical properties calculated from transmittance using appropriate equations are absorbance, reflectance, band gap , absorption coefficient, optical conductivity, refractive index and extinction coefficient.

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