scholarly journals Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

2004 ◽  
Vol 811 ◽  
Author(s):  
A. R. Kortan ◽  
M. Hong ◽  
J. Kwo ◽  
P. Chang ◽  
C. P. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Fold Axis ◽  
Uniform Thickness ◽  
Structural Perfection ◽  
Plane Orientation ◽  
Axis Parallel ◽  
High Structural Perfection ◽  
Α Al2o3

ABSTRACTWe have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

1984 ◽  
Vol 44 (3) ◽  
pp. 313-315 ◽  
Author(s):  
R. N. Bicknell ◽  
R. W. Yanka ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
T. J. Magee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Perfection ◽  
Gaas Substrates ◽  
High Structural Perfection ◽  
Cdte Films

Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6170-6173 ◽  
Author(s):  
Min-Ho Kim ◽  
Sung-Nam Lee ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Structural Perfection of in GaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy: A High-Resolution X-Ray Diffraction Study

1987 ◽  
Vol 103 ◽  
Author(s):  
J. M. Vandenberg ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Parameters ◽  
Molecular Layer ◽  
X Ray Diffraction ◽  
Structural Perfection ◽  
X Ray ◽  
Gas Source ◽  
Step Model

ABSTRACTHigh-resolution X-ray diffraction (HRXRD) studies have been cardied out to determine the structural perfection and periodicity for a number of high-quality InGaAsfInP superlattices grown by gas source molecular beam epitaxy. X-ray scans were carried out with a compact four-crystal monochromator resulting in a resolution of one molecular layer (∼3,Å), which enables one to observe very small variations in the periodic structure. Sharp and strong higher-order satellite reflections in the XRD profiles were observed indicating smooth interfaces with well-defined modulated structures. Excellent computer simulated fits of the X-ray satellite pattern could be generated based on a kinematical XRD step model which assumes ideally sharp interfaces, and periodic structural parameters such as the strain in the well could be extracted. Our results3 demonstrate that HRXRD in conjunction with the kinematical step model is a very sensitive method to assess periodic structural modifications in superlattices as a result of the precise growth conditions in the gas source MBE system.

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

2019 ◽  
Vol 40 (1) ◽  
pp. 012802 ◽  
Author(s):  
Jiaqi Wei ◽  
Kumsong Kim ◽  
Fang Liu ◽  
Ping Wang ◽  
Xiantong Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Ga2o3 Thin Film

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

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