A self-assembling amphiphilic perylene bisimide and its application for WORM memory devices

2016 ◽  
Vol 40 (10) ◽  
pp. 8886-8891 ◽  
Author(s):  
Junfeng Li ◽  
Chenglong Yang ◽  
Ying Chen ◽  
Wen-Yong Lai
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Perylene Bisimide ◽  
Self Assembling ◽  
External Stimuli

Morphologies of the amphiphilic perylene bisimide assemblies were controlled and switched by external stimuli to afford a good-performance WORM memory device.

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  
Keyword(s):  
Memory Device ◽  
Star Polymer ◽  
Charge Storage ◽  
Device Performance ◽  
Memory Devices ◽  
Storage Material ◽  
Novel Strategy ◽  
A Charge

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

scholarly journals Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Memory Device ◽  
Buffer Layers ◽  
Memory Devices

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.

High performance polymers and their PCBM hybrids for memory device application

2015 ◽  
Vol 6 (42) ◽  
pp. 7464-7469 ◽  
Author(s):  
Hung-Ju Yen ◽  
Chih-Jung Chen ◽  
Jia-Hao Wu ◽  
Guey-Sheng Liou
Keyword(s):  
Electron Acceptor ◽  
High Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Device Application ◽  
High Performance Polymers ◽  
Wide Range

Three series of memory devices were prepared from OHTPA-based high-performance polymers and the memory behaviors can be tuned in a wide range by varying the concentration of electron-acceptor PCBM.

Electrically Re-Writable Non-Volatile Memory Device - Using a Blend of Sea Salt and Polymer

2008 ◽  
Vol 54 ◽  
pp. 486-490 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Polyvinyl Acetate ◽  
Organic Molecules ◽  
Memory Device ◽  
Sea Salt ◽  
Nano Particles ◽  
Memory Devices ◽  
Current Voltage ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Charging Mechanism

Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for optical, electronic and other applications. Recently, it has been shown that nano-sized particles and small organic molecules embedded in polymer matrices can be used to realise memory devices. Such memory devices are simple to fabricate via the spin-on technique. This work presents an attempt to use sea salt, embedded in polyvinyl acetate, in the making of the memory devices. A polymer blend of polyvinyl acetate and sodium chloride (NaCl) was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and a top contact was evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The possible charging mechanism, based on the electric dipole formation, is presented in this work. Polymer blends of polyvinyl acetate with nano-particles of BaTiO3 are also investigated to further our understanding of charging mechanism(s).

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Nonvolatile resistive memories utilizing functional PES-based supramolecular film

2017 ◽  
Vol 30 (9) ◽  
pp. 1056-1063 ◽  
Author(s):  
Hejing Sun ◽  
Haibo Zhang ◽  
Zheng Chen ◽  
Jinhui Pang ◽  
Cong Gao ◽  
...  
Keyword(s):  
Hydrogen Bonding ◽  
High Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Threshold Voltages ◽  
High Performance Polymer ◽  
Fabrication And Characterization ◽  
First Time

This study reports the fabrication and characterization of polymer resistive switching memory devices fabricated from poly(ether sulfone)s (PESs), containing carboxylic functional groups for hydrogen bonding with disperse red 1. PES-based supramolecular memory devices exhibited write-once read-many-times-type memory effects, with low switching threshold voltages below −5.0 V and high ON/OFF current ratios of 105. It is the first time that the concept of azobenzene supramolecular PES based on hydrogen bonding for electrical memory device application was investigated. A possible switching mechanism based on the charge transfer interaction was proposed through molecular simulation, optical absorption, and cyclic voltammetry. These results render the PES-based supramolecular memory devices as promising components for high-performance polymer memory devices.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Sign in / Sign up

Export Citation Format

Share Document