scholarly journals Silicene, silicene derivatives, and their device applications

2018 ◽  
Vol 47 (16) ◽  
pp. 6370-6387 ◽  
Author(s):  
Alessandro Molle ◽  
Carlo Grazianetti ◽  
Li Tao ◽  
Deepyanti Taneja ◽  
Md. Hasibul Alam ◽  
...  

Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties.

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.


PLoS ONE ◽  
2021 ◽  
Vol 16 (8) ◽  
pp. e0255637
Author(s):  
Yu Zhang ◽  
Wenjing Xu ◽  
Guangjie Liu ◽  
Zhiyong Zhang ◽  
Jinlong Zhu ◽  
...  

The bandgap of two-dimensional (2D) materials plays an important role in their applications to various devices. For instance, the gapless nature of graphene limits the use of this material to semiconductor device applications, whereas the indirect bandgap of molybdenum disulfide is suitable for electrical and photo-device applications. Therefore, predicting the bandgap rapidly and accurately for a given 2D material structure has great scientific significance in the manufacturing of semiconductor devices. Compared to the extremely high computation cost of conventional first-principles calculations, machine learning (ML) based on statistics may be a promising alternative to predicting bandgaps. Although ML algorithms have been used to predict the properties of materials, they have rarely been used to predict the properties of 2D materials. In this study, we apply four ML algorithms to predict the bandgaps of 2D materials based on the computational 2D materials database (C2DB). Gradient boosted decision trees and random forests are more effective in predicting bandgaps of 2D materials with an R2 >90% and root-mean-square error (RMSE) of ~0.24 eV and 0.27 eV, respectively. By contrast, support vector regression and multi-layer perceptron show that R2 is >70% with RMSE of ~0.41 eV and 0.43 eV, respectively. Finally, when the bandgap calculated without spin-orbit coupling (SOC) is used as a feature, the RMSEs of the four ML models decrease greatly to 0.09 eV, 0.10 eV, 0.17 eV, and 0.12 eV, respectively. The R2 of all the models is >94%. These results show that the properties of 2D materials can be rapidly obtained by ML prediction with high precision.


2021 ◽  
Author(s):  
Muhammad Aamir Iqbal ◽  
Maria Malik ◽  
Wajeehah Shahid ◽  
Waqas Ahmad ◽  
Kossi A. A. Min-Dianey ◽  
...  

Plasmonics is a technologically advanced term in condensed matter physics that describes surface plasmon resonance where surface plasmons are collective electron oscillations confined at the dielectric-metal interface and these collective excitations exhibit profound plasmonic properties in conjunction with light interaction. Surface plasmons are based on nanomaterials and their structures; therefore, semiconductors, metals, and two-dimensional (2D) nanomaterials exhibit distinct plasmonic effects due to unique confinements. Recent technical breakthroughs in characterization and material manufacturing of two-dimensional ultra-thin materials have piqued the interest of the materials industry because of their extraordinary plasmonic enhanced characteristics. The 2D plasmonic materials have great potential for photonic and optoelectronic device applications owing to their ultra-thin and strong light-emission characteristics, such as; photovoltaics, transparent electrodes, and photodetectors. Also, the light-driven reactions of 2D plasmonic materials are environmentally benign and climate-friendly for future energy generations which makes them extremely appealing for energy applications. This chapter is aimed to cover recent advances in plasmonic 2D materials (graphene, graphene oxides, hexagonal boron nitride, pnictogens, MXenes, metal oxides, and non-metals) as well as their potential for applied applications, and is divided into several sections to elaborate recent theoretical and experimental developments along with potential in photonics and energy storage industries.


RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.


Author(s):  
Heming Li ◽  
Xinxin Jiang ◽  
Xuhui Xu ◽  
Ge Xu ◽  
Dongmei Li ◽  
...  

Two-dimensional (2D) materials have attracted great interests in the field of optoelectronics in recent years due to their atomically thin structure and various electronic properties. Based on the first-principles calculations...


Author(s):  
JuTao Zhang ◽  
Ying Liang ◽  
Hao Guo ◽  
Tian C Zhang ◽  
Haidong Fan ◽  
...  

Vacancy defects are inevitable when synthesizing two-dimensional (2D) materials, and vacancy defects greatly affect the physical properties, such as magnetism and electronic properties. Currently, sufficient information is not available on...


Author(s):  
Min Gao ◽  
Jun Hu

Decorating two-dimensional (2D) materials with transition-metal adatoms is an effective way to bring about new physical properties that are intriguing for applications in electronics and spintronics devices. Here, we systematically studied the coverage-dependent magnetic and electronic properties of graphene decorated by Co adatoms, based on first-principles calculations. We found that if the Co coverage is larger than 1/3[Formula: see text]ML, the Co atoms will aggregate to form a Co monolayer and then a van der Waals bilayer system between the Co monolayer and graphene forms. When the Co coverage is [Formula: see text][Formula: see text]ML, the Co adatom is spin-polarized with spin moment varying from 1.1 to 1.4[Formula: see text][Formula: see text]. The [Formula: see text] and [Formula: see text] orbitals of Co hybridize significantly with the [Formula: see text] bands of graphene, which generates a series of new bands in the energy range from [Formula: see text][Formula: see text]eV to 1[Formula: see text]eV with respect to the Dirac point of graphene. In most cases, the new bands near the Fermi level lead to topological states characterized by the quantum anomalous Hall effect.


Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2147-2168 ◽  
Author(s):  
Wei Gao ◽  
Zhaoqiang Zheng ◽  
Peiting Wen ◽  
Nengjie Huo ◽  
Jingbo Li

AbstractTwo-dimensional (2D) materials have undergone a rapid development toward real applications since the discovery of graphene. At first, graphene is a star material because of the ultrahigh mobility and novel physics, but it always suffered from zero bandgap and limited device application. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Recently, research interests have turned to monoelemental and ternary 2D materials. Among them, monoelemental 2D materials such as arsenic (As), antimony (Sb), bismuth (Bi), tellurium (Te), etc., have been the focus. For example, bismuthene can act as a 2D topological insulator with nontrivial topological edge states and high bulk gap, providing the novel platforms to realize the quantum spin-Hall systems. Meanwhile, ternary 2D materials such as Bi2O2Se, BiOX and CrOX (X=Cl, Br, I) have also emerged as promising candidates in optoelectronics and spintronics due to their extraordinary mobility, favorable band structures and intrinsic ferromagnetism with high Curie temperature. In this review, we will discuss the recent works and future prospects on the emerging monoelemental and ternary materials in terms of their structure, growth, physics and device applications.


Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Nurul Ezaila Alias ◽  
Cheng Siong Lim ◽  
...  

<p>Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).</p>


2021 ◽  
Author(s):  
Xiaoyu Xuan ◽  
Menghao Wu ◽  
Zhuhua Zhang ◽  
Wanlin Guo

Ferroelasticity, ferromagnetism, half-metallicity, and topological Dirac states are compelling properties highly sought in two-dimensional (2D) materials for advanced device applications. Here, we report first-principles prediction of a dynamically and thermally...


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