scholarly journals Plasmonic 2D Materials: Overview, Advancements, Future Prospects and Functional Applications

2021 ◽  
Author(s):  
Muhammad Aamir Iqbal ◽  
Maria Malik ◽  
Wajeehah Shahid ◽  
Waqas Ahmad ◽  
Kossi A. A. Min-Dianey ◽  
...  
Keyword(s):  
Surface Plasmons ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Optoelectronic Device ◽  
Two Dimensional ◽  
Graphene Oxides ◽  
Plasmonic Materials ◽  
Energy Applications ◽  
Device Applications

Plasmonics is a technologically advanced term in condensed matter physics that describes surface plasmon resonance where surface plasmons are collective electron oscillations confined at the dielectric-metal interface and these collective excitations exhibit profound plasmonic properties in conjunction with light interaction. Surface plasmons are based on nanomaterials and their structures; therefore, semiconductors, metals, and two-dimensional (2D) nanomaterials exhibit distinct plasmonic effects due to unique confinements. Recent technical breakthroughs in characterization and material manufacturing of two-dimensional ultra-thin materials have piqued the interest of the materials industry because of their extraordinary plasmonic enhanced characteristics. The 2D plasmonic materials have great potential for photonic and optoelectronic device applications owing to their ultra-thin and strong light-emission characteristics, such as; photovoltaics, transparent electrodes, and photodetectors. Also, the light-driven reactions of 2D plasmonic materials are environmentally benign and climate-friendly for future energy generations which makes them extremely appealing for energy applications. This chapter is aimed to cover recent advances in plasmonic 2D materials (graphene, graphene oxides, hexagonal boron nitride, pnictogens, MXenes, metal oxides, and non-metals) as well as their potential for applied applications, and is divided into several sections to elaborate recent theoretical and experimental developments along with potential in photonics and energy storage industries.

scholarly journals Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-35
Author(s):  
Ziwei Li ◽  
Boyi Xu ◽  
Delang Liang ◽  
Anlian Pan
Keyword(s):  
Light Emission ◽  
2D Materials ◽  
Scientific Discovery ◽  
Optoelectronic Devices ◽  
Polarized Light ◽  
Optoelectronic Device ◽  
Raman Shift ◽  
Novel Device ◽  
Device Applications ◽  
New Material

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

Film Preparation Conditions and Characterization of co-Deposited Tungsten Doped Zinc Oxide Phosphor

1999 ◽  
Vol 558 ◽  
Author(s):  
Jasleen Bombra Sobti ◽  
V. Bhatia ◽  
P. M. Babuchna ◽  
Mark H. Weichold
Keyword(s):  
Zinc Oxide ◽  
Blue Light ◽  
Light Emission ◽  
Optoelectronic Device ◽  
Flat Panel Displays ◽  
Phosphor Material ◽  
Light Emitting ◽  
Preparation Conditions ◽  
Device Applications ◽  
Work Done

ABSTRACTNeed for efficient blue light emitting source for optoelectronic device applications such as flat panel displays has made the research in luminescent material ever so important. Tungsten doped zinc oxide (ZnO:W) has been identified as a blue light emitting phosphor exhibiting cathodoluminescence near 490 nm. This paper details work done on ZnO:W phosphor preparation conditions for efficient light emission from the phosphor. Material characterization to identify the possible source of blue light emission will also be discussed.

scholarly journals Bandgap prediction of two-dimensional materials using machine learning

PLoS ONE ◽  
2021 ◽  
Vol 16 (8) ◽  
pp. e0255637
Author(s):  
Yu Zhang ◽  
Wenjing Xu ◽  
Guangjie Liu ◽  
Zhiyong Zhang ◽  
Jinlong Zhu ◽  
...  
Keyword(s):  
Machine Learning ◽  
Semiconductor Device ◽  
2D Materials ◽  
Support Vector ◽  
Material Structure ◽  
Two Dimensional ◽  
Promising Alternative ◽  
Two Dimensional Materials ◽  
Device Applications ◽  
Boosted Decision Trees

The bandgap of two-dimensional (2D) materials plays an important role in their applications to various devices. For instance, the gapless nature of graphene limits the use of this material to semiconductor device applications, whereas the indirect bandgap of molybdenum disulfide is suitable for electrical and photo-device applications. Therefore, predicting the bandgap rapidly and accurately for a given 2D material structure has great scientific significance in the manufacturing of semiconductor devices. Compared to the extremely high computation cost of conventional first-principles calculations, machine learning (ML) based on statistics may be a promising alternative to predicting bandgaps. Although ML algorithms have been used to predict the properties of materials, they have rarely been used to predict the properties of 2D materials. In this study, we apply four ML algorithms to predict the bandgaps of 2D materials based on the computational 2D materials database (C2DB). Gradient boosted decision trees and random forests are more effective in predicting bandgaps of 2D materials with an R2 >90% and root-mean-square error (RMSE) of ~0.24 eV and 0.27 eV, respectively. By contrast, support vector regression and multi-layer perceptron show that R2 is >70% with RMSE of ~0.41 eV and 0.43 eV, respectively. Finally, when the bandgap calculated without spin-orbit coupling (SOC) is used as a feature, the RMSEs of the four ML models decrease greatly to 0.09 eV, 0.10 eV, 0.17 eV, and 0.12 eV, respectively. The R2 of all the models is >94%. These results show that the properties of 2D materials can be rapidly obtained by ML prediction with high precision.

scholarly journals Advances in quantum light emission from 2D materials

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2017-2032 ◽  
Author(s):  
Chitraleema Chakraborty ◽  
Nick Vamivakas ◽  
Dirk Englund
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Momentum Space ◽  
Recent Progress ◽  
Light Emission ◽  
2D Materials ◽  
Two Dimensional ◽  
Theoretical Understanding ◽  
Practical Applications ◽  
Spin Properties

AbstractTwo-dimensional (2D) materials are being actively researched due to their exotic electronic and optical properties, including a layer-dependent bandgap, a strong exciton binding energy, and a direct optical access to electron valley index in momentum space. Recently, it was discovered that 2D materials with bandgaps could host quantum emitters with exceptional brightness, spectral tunability, and, in some cases, also spin properties. This review considers the recent progress in the experimental and theoretical understanding of these localized defect-like emitters in a variety of 2D materials as well as the future advantages and challenges on the path toward practical applications.

scholarly journals Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Arne Quellmalz ◽  
Xiaojing Wang ◽  
Simon Sawallich ◽  
Burkay Uzlu ◽  
Martin Otto ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Semiconductor Manufacturing ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
High Volume ◽  
Two Dimensional ◽  
Wafer Level ◽  
Large Area ◽  
Wide Range

AbstractIntegrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.

scholarly journals Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

Nanophotonics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 253-267 ◽  
Author(s):  
Mauro Brotons-Gisbert ◽  
Juan P. Martínez-Pastor ◽  
Guillem C. Ballesteros ◽  
Brian D. Gerardot ◽  
Juan F. Sánchez-Royo
Keyword(s):  
Strong Coupling ◽  
Light Absorption ◽  
Light Emission ◽  
Single Photon ◽  
2D Materials ◽  
Photon Emission ◽  
Optimal Operation ◽  
Light Sources ◽  
Two Dimensional ◽  
Versatile Tool

AbstractTwo-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in MoS2 single layers, light extraction from arbitrarily oriented dipole monolayers, and single-photon emission in 2D materials. Also, it has been successfully applied to retrieve exciton-cavity interaction parameters from MoS2 microcavity experiments. The present model appears as a powerful and versatile tool for the design of new optoelectronic devices based on 2D semiconductors such as quantum light sources and polariton lasers.

A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

2017 ◽  
Vol 5 (4) ◽  
pp. 862-871 ◽  
Author(s):  
Ghayas Uddin Siddiqui ◽  
Muhammad Muqeet Rehman ◽  
Young-Jin Yang ◽  
Kyung Hyun Choi
Keyword(s):  
Boron Nitride ◽  
Resistive Switching ◽  
Electronic Device ◽  
Hexagonal Boron Nitride ◽  
Polymer Nanocomposite ◽  
Hybrid Nanocomposites ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Device Applications ◽  
Switching Devices

Organic–inorganic hybrid nanocomposites are an attractive choice for various electronic device applications.

scholarly journals The Creation of True Two-Dimensional Silicon Carbide

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1799
Author(s):  
Sakineh Chabi ◽  
Zeynel Guler ◽  
Adrian J. Brearley ◽  
Angelica D. Benavidez ◽  
Ting Shan Luk
Keyword(s):  
Silicon Carbide ◽  
Light Emission ◽  
Van Der Waals ◽  
Longitudinal Optical ◽  
Synthesis Process ◽  
Two Dimensional ◽  
Light Emitting Devices ◽  
Energy Applications ◽  
Successful Isolation ◽  
Potential Applications

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.

scholarly journals Device Applications of Metal-2D-Materials Interfaces A Short Review

2018 ◽  
Vol 3 (4) ◽  
pp. 1 ◽  
Author(s):  
Faisal Ahmad ◽  
Amir Mansoori ◽  
Sonia Bansal ◽  
Th. S. Dhahi ◽  
Shamim Ahmad
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Electronic Energy ◽  
Device Fabrication ◽  
Current Status ◽  
Large Area ◽  
Wide Range ◽  
Device Applications

The electronic energy band gaps of 2D-materials are known to spread over a wide range from zero in graphene to > 6eV in hexagonal boron nitride (h-BN). Various combinations of such engineered nanomaterials offer a number of novel device applications involving their unique optical, electronic, and thermal properties along with their higher charge carrier mobilities and saturation limited drift velocities. Structurally, these nanomaterials have single or multiple monolayers stuck together, which are not only suitable for flexible electron devices and circuits but also in preparing heterostructures (lateral as well as vertical configurations) that form super lattices with different kinds of band alignments. Such possibilities offer flexible control over the charge carrier transport in these materials via numerous types of exciton formations. Their extra sensitivity towards the presence of atomic, molecular and nanoparticulate species in their vicinity is the most significant aspect of these 2D-materials. This is the reason behind studying them in detail for detecting the presence of extremely low concentrations of the analyte that are not achievable in conventional sensors. For translating the above-said superlative properties of these fast emerging families of 2-D nanomaterials into usable devices and circuits, applying the conventional device fabrication technologies poses a real challenge. The experimental results reported in the context of forming usable interfaces between a metal and 2D-nanomaterial are examined here to assess their current status and future prospects. Their widespread applications are certainly anticipated in the fields like printed micro/nano sensors, large area electronics and printed intelligence with special reference to their emerging usages in Internet of Things (IoT) in the near future. 

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