Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route
Keyword(s):
Sol Gel
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Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.