scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.


1999 ◽  
Vol 11 (16) ◽  
pp. 1372-1375 ◽  
Author(s):  
C. D. Dimitrakopoulos ◽  
I. Kymissis ◽  
S. Purushothaman ◽  
D. A. Neumayer ◽  
P. R. Duncombe ◽  
...  


2005 ◽  
Vol 86 (24) ◽  
pp. 242902 ◽  
Author(s):  
Barbara Stadlober ◽  
Martin Zirkl ◽  
Michael Beutl ◽  
Günther Leising ◽  
Simona Bauer-Gogonea ◽  
...  


RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 51493-51502 ◽  
Author(s):  
Mohamed Karmaoui ◽  
E. Venkata Ramana ◽  
David M. Tobaldi ◽  
Luc Lajaunie ◽  
Manuel P. Graça ◽  
...  

Strontium hafnium oxide (SrHfO3) has great potential as a high-k gate dielectric material, for use in memories, capacitors, CMOS and MOSFETs.



2013 ◽  
Vol 24 (49) ◽  
pp. 499601 ◽  
Author(s):  
Limin Huang ◽  
Shuangyi Liu ◽  
Barry J Van Tassell ◽  
Xiaohua Liu ◽  
Andrew Byro ◽  
...  


2015 ◽  
Vol 44 (7) ◽  
pp. 2243-2249 ◽  
Author(s):  
Xin Ouyang ◽  
Peng Cao ◽  
Saifang Huang ◽  
Weijun Zhang ◽  
Zhaohui Huang ◽  
...  




2013 ◽  
Vol 24 (41) ◽  
pp. 415602 ◽  
Author(s):  
Limin Huang ◽  
Shuangyi Liu ◽  
Barry J Van Tassell ◽  
Xiaohua Liu ◽  
Andrew Byro ◽  
...  




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