Bilayer BaSnO3 thin film transistors on silicon substrates

2020 ◽  
Vol 8 (15) ◽  
pp. 5231-5238
Author(s):  
Wenhan Du ◽  
Anh Chien Nguyen ◽  
Rohit Abraham John ◽  
Jing Jing Yang ◽  
Mohit Rameshchandra Kulkarni ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Silicon Substrates ◽  
High Electron ◽  
Oxide Semiconductors ◽  
Promising Alternative ◽  
High Electron Mobility ◽  
Semiconducting Material

Barium tin oxide BaSnO3 (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors.

Supreme performance of zinc oxynitride thin film transistors via systematic control of the photo-thermal activation process

2018 ◽  
Vol 6 (19) ◽  
pp. 5171-5175 ◽  
Author(s):  
Hyun-Jun Jeong ◽  
Hyun-Mo Lee ◽  
Kyung-Chul Ok ◽  
Jozeph Park ◽  
Jin-Seong Park
Keyword(s):  
Thin Film Transistors ◽  
Thermal Activation ◽  
Activation Process ◽  
High Electron ◽  
Oxide Semiconductors ◽  
Promising Alternative ◽  
High Electron Mobility ◽  
Device Reliability ◽  
Thermal Activation Process ◽  
Systematic Control

Zinc oxynitride (ZnON) is a relatively novel class of material, often regarded as a promising alternative to oxide semiconductors, owing to its relatively high electron mobility and low concentration of oxygen-related defects that affect the device reliability.

A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors

2019 ◽  
Vol 66 (6) ◽  
pp. 2631-2636 ◽  
Author(s):  
Chih-Chieh Hsu ◽  
Cheng-Han Chou ◽  
Yu-Ting Chen ◽  
Wun-Ciang Jhang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Zinc Tin Oxide

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

Interface optimization using diindenoperylene for C 60 thin film transistors with high electron mobility and stability

2014 ◽  
Vol 15 (11) ◽  
pp. 2749-2755 ◽  
Author(s):  
Jin-Peng Yang ◽  
Qi-Jun Sun ◽  
Keiichirou Yonezawa ◽  
Alexander Hinderhofer ◽  
Alexander Gerlach ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
High Electron Mobility

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type

Phthalimide–thiophene-based conjugated organic small molecules with high electron mobility

2014 ◽  
Vol 2 (14) ◽  
pp. 2612-2621 ◽  
Author(s):  
Jon-Paul Sun ◽  
Arthur D. Hendsbee ◽  
Ala'a F. Eftaiha ◽  
Casper Macaulay ◽  
Lesley R. Rutledge ◽  
...  
Keyword(s):  
Thin Film ◽  
Small Molecules ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
High Electron Mobility

High electron mobility in a series of phthalimide–thiophene small molecules has been demonstrated when incorporated into thin film transistors.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

2016 ◽  
Vol 108 (15) ◽  
pp. 152111 ◽  
Author(s):  
Ah Young Hwang ◽  
Sang Tae Kim ◽  
Hyuk Ji ◽  
Yeonwoo Shin ◽  
Jae Kyeong Jeong
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Semiconductors ◽  
Metal Induced Crystallization ◽  
Zinc Tin Oxide ◽  
Induced Crystallization

Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

2008 ◽  
Vol 55 (11) ◽  
pp. 3001-3011 ◽  
Author(s):  
Flora M. Li ◽  
Gen-Wen Hsieh ◽  
Sharvari Dalal ◽  
Marcus C. Newton ◽  
James E. Stott ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
Nanocomposite Thin Film ◽  
Zinc Oxide Nanostructures ◽  
High Electron Mobility ◽  
Oxide Nanostructures
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