Supreme performance of zinc oxynitride thin film transistors via systematic control of the photo-thermal activation process

2018 ◽  
Vol 6 (19) ◽  
pp. 5171-5175 ◽  
Author(s):  
Hyun-Jun Jeong ◽  
Hyun-Mo Lee ◽  
Kyung-Chul Ok ◽  
Jozeph Park ◽  
Jin-Seong Park
Keyword(s):  
Thin Film Transistors ◽  
Thermal Activation ◽  
Activation Process ◽  
High Electron ◽  
Oxide Semiconductors ◽  
Promising Alternative ◽  
High Electron Mobility ◽  
Device Reliability ◽  
Thermal Activation Process ◽  
Systematic Control

Zinc oxynitride (ZnON) is a relatively novel class of material, often regarded as a promising alternative to oxide semiconductors, owing to its relatively high electron mobility and low concentration of oxygen-related defects that affect the device reliability.

Bilayer BaSnO3 thin film transistors on silicon substrates

2020 ◽  
Vol 8 (15) ◽  
pp. 5231-5238
Author(s):  
Wenhan Du ◽  
Anh Chien Nguyen ◽  
Rohit Abraham John ◽  
Jing Jing Yang ◽  
Mohit Rameshchandra Kulkarni ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Wide Bandgap ◽  
Silicon Substrates ◽  
High Electron ◽  
Oxide Semiconductors ◽  
Promising Alternative ◽  
High Electron Mobility ◽  
Semiconducting Material

Barium tin oxide BaSnO3 (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors.

Thermal Degradation Behavior of Hydrogen Permeability of Pd-Coated V-Alloy Membrane for Hydrogen Separation and Purification

2021 ◽  
Vol 1016 ◽  
pp. 1710-1714
Author(s):  
Hiroshi Yukawa ◽  
Tomonori Nambu ◽  
Yoshihisa Matsumoto
Keyword(s):  
Thermal Activation ◽  
Hydrogen Permeability ◽  
Testing Temperature ◽  
Hydrogen Separation ◽  
Activation Process ◽  
Degradation Behavior ◽  
Separation And Purification ◽  
Accelerated Degradation ◽  
Thermal Degradation Behavior ◽  
Thermal Activation Process

A series of accelerated degradation experiments at high temperatures have been performed for Pd-coated V-10 mol% Fe alloy membranes in order to investigate the degradation behavior of hydrogen permeability. The degradation of the membrane becomes severer with increasing testing temperature. The temperature dependence of the 20% degradation rate almost obeys the Arrhenius relationship, suggesting that the degradation phenomenon occurs by a kind of thermal activation process. It is found that the addition of a small amount of W into Pd overlayer improves the durability of the membrane significantly.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

Interface optimization using diindenoperylene for C 60 thin film transistors with high electron mobility and stability

2014 ◽  
Vol 15 (11) ◽  
pp. 2749-2755 ◽  
Author(s):  
Jin-Peng Yang ◽  
Qi-Jun Sun ◽  
Keiichirou Yonezawa ◽  
Alexander Hinderhofer ◽  
Alexander Gerlach ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Dissolution Process Observation of Methane Bubbles in the Deep Ocean Simulator Facility

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3938
Author(s):  
Tsutomu Uchida ◽  
Ike Nagamine ◽  
Itsuka Yabe ◽  
Tatsunori Fukumaki ◽  
Ai Oyama ◽  
...  
Keyword(s):  
Dissolution Rate ◽  
Thermal Activation ◽  
Pure Water ◽  
Deep Ocean ◽  
Ccd Camera ◽  
Activation Process ◽  
Thermal Activation Process ◽  
Methane Bubble ◽  
Expected Values ◽  
Process Observation

To investigate the temperature dependency of the methane bubble dissolution rate, buoyant single methane bubbles were held stationary in a countercurrent water flow at a pressure of 6.9 MPa and temperatures ranging from 288 K to 303 K. The 1 to 3 mm diameter bubbles were analyzed by observation through the pressure chamber viewport using a bi-telecentric CCD camera. The dissolution rate in artificial seawater was approximately two times smaller than that in pure water. Furthermore, it was observed that the methane bubble dissolution rate increased with temperature, suggesting that bubble dissolution is a thermal activation process (the activation energy is estimated to be 9.0 kJ/mol). The results were different from the expected values calculated using the governing equation for methane dissolution in water. The dissolution modeling of methane bubbles in the mid-to-shallow depth of seawater was revised based on the current results.

Characterization of Tetrahedrally Bonded Amorphous Carbon Via Capacitance Techniques

1998 ◽  
Vol 508 ◽  
Author(s):  
Kimon C. Palinginis ◽  
A. Ilie ◽  
B. Kleinsorge ◽  
W.I. Milne ◽  
J. D. Cohen
Keyword(s):  
Amorphous Carbon ◽  
Thermal Activation ◽  
Activation Process ◽  
Defect States ◽  
Capacitance Measurements ◽  
Tetrahedral Amorphous Carbon ◽  
Thermal Activation Process ◽  
Order Of Magnitude ◽  
Defect Densities

AbstractWe report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 - 7 × 1017 cm−3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.

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