scholarly journals Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (21) ◽  
pp. 11448-11454 ◽  
Author(s):  
Ning Zhao ◽  
Udo Schwingenschlögl

We propose an effective route to high performance MoSSe electronic devices.

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianqian Wang ◽  
Liemao Cao ◽  
Shi-Jun Liang ◽  
Weikang Wu ◽  
Guangzhao Wang ◽  
...  

AbstractMetal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices.


Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.


Author(s):  
Stephen R. Forrest

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.


2021 ◽  
Vol 7 (2) ◽  
pp. eabe3097
Author(s):  
Hongwei Sheng ◽  
Jingjing Zhou ◽  
Bo Li ◽  
Yuhang He ◽  
Xuetao Zhang ◽  
...  

It has been an outstanding challenge to achieve implantable energy modules that are mechanically soft (compatible with soft organs and tissues), have compact form factors, and are biodegradable (present for a desired time frame to power biodegradable, implantable medical electronics). Here, we present a fully biodegradable and bioabsorbable high-performance supercapacitor implant, which is lightweight and has a thin structure, mechanical flexibility, tunable degradation duration, and biocompatibility. The supercapacitor with a high areal capacitance (112.5 mF cm−2 at 1 mA cm−2) and energy density (15.64 μWh cm−2) uses two-dimensional, amorphous molybdenum oxide (MoOx) flakes as electrodes, which are grown in situ on water-soluble Mo foil using a green electrochemical strategy. Biodegradation behaviors and biocompatibility of the associated materials and the supercapacitor implant are systematically studied. Demonstrations of a supercapacitor implant that powers several electronic devices and that is completely degraded after implantation and absorbed in rat body shed light on its potential uses.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Rongliang Yang ◽  
Xuchun Gui ◽  
Li Yao ◽  
Qingmei Hu ◽  
Leilei Yang ◽  
...  

AbstractLightweight, flexibility, and low thickness are urgent requirements for next-generation high-performance electromagnetic interference (EMI) shielding materials for catering to the demand for smart and wearable electronic devices. Although several efforts have focused on constructing porous and flexible conductive films or aerogels, few studies have achieved a balance in terms of density, thickness, flexibility, and EMI shielding effectiveness (SE). Herein, an ultrathin, lightweight, and flexible carbon nanotube (CNT) buckypaper enhanced using MXenes (Ti3C2Tx) for high-performance EMI shielding is synthesized through a facile electrophoretic deposition process. The obtained Ti3C2Tx@CNT hybrid buckypaper exhibits an outstanding EMI SE of 60.5 dB in the X-band at 100 μm. The hybrid buckypaper with an MXene content of 49.4 wt% exhibits an EMI SE of 50.4 dB in the X-band with a thickness of only 15 μm, which is 105% higher than that of pristine CNT buckypaper. Furthermore, an average specific SE value of 5.7 × 104 dB cm2 g−1 is exhibited in the 5-μm hybrid buckypaper. Thus, this assembly process proves promising for the construction of ultrathin, flexible, and high-performance EMI shielding films for application in electronic devices and wireless communications.


2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong

2017 ◽  
Vol 53 (11) ◽  
pp. 3241-3247 ◽  
Author(s):  
Mohammad Shahed Ahamed ◽  
Yuji Saito ◽  
Koichi Mashiko ◽  
Masataka Mochizuki

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