scholarly journals Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianqian Wang ◽  
Liemao Cao ◽  
Shi-Jun Liang ◽  
Weikang Wu ◽  
Guangzhao Wang ◽  
...  
Keyword(s):  
Energy Efficient ◽  
High Performance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Metal Contacts ◽  
Fermi Level Pinning ◽  
2D Semiconductors ◽  
Semiconductor Electronic ◽  
Wide Range

AbstractMetal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices.

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Science ◽  
2018 ◽  
Vol 361 (6400) ◽  
pp. 387-392 ◽  
Author(s):  
Chenguang Qiu ◽  
Fei Liu ◽  
Lin Xu ◽  
Bing Deng ◽  
Mengmeng Xiao ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
Electron Density Distribution ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Electronic Devices ◽  
Electronic Switches

An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts per decade, in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolts per decade over four decades of current at room temperature and high device current I60 of up to 40 microamperes per micrometer at 60 millivolts per decade. When compared with state-of-the-art silicon 14-nanometer node FETs, a similar on-state current Ion is realized but at a much lower supply voltage of 0.5 volts (versus 0.7 volts for silicon) and a much steeper SS below 35 millivolts per decade in the off-state.

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Ultra-High Performance Organic Thermoelectric Generators through Interfacial Doping Gradients

2020 ◽  
Author(s):  
I. Petsagkourakis ◽  
S. Riera-Galindo ◽  
Tero-Petri Ruoko ◽  
Xenofon Strakosas ◽  
Eleni Pavlopoulou ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Devices ◽  
Fine Tuning ◽  
Organic Layer ◽  
Ambient Atmosphere ◽  
Metal Contacts ◽  
Organic Electronic Devices ◽  
Output Performance ◽  
Metal Polymer ◽  
Interfacial Energetics

Abstract The interfacial energetics are known to play a crucial role in organic electronic devices. However, their effects in organic thermoelectrics remain to be elucidated. In this work we optimize the output power density of an organic thermoelectric generator (OTEG) at ambient atmosphere to record high values, by varying the work function of the metal contacts. We find that the effect is linked to extended gradients of doping states, which are induced by humidity and reside inside the organic layer oriented perpendicular to the metal contacts. The thermovoltage, arising from this contact phenomenon alone, reaches a magnitude similar to that of the Seebeck voltage of the conducting polymer itself, thereby providing a major contribution to the resulting thermoelectric performance. With this work, we put a new emphasis on the importance of the metal-polymer interface in thermoelectrics. The overall output performance can be greatly improved by fine-tuning the interfacial energetics, which then provides an attractive complementing route for enhancing the performance of OTEGs.

scholarly journals Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (21) ◽  
pp. 11448-11454 ◽  
Author(s):  
Ning Zhao ◽  
Udo Schwingenschlögl
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Electronic Devices

We propose an effective route to high performance MoSSe electronic devices.

scholarly journals Third Eye for Blind

2021 ◽  
Vol 9 (VII) ◽  
pp. 3447-3451
Author(s):  
Mr. Sachin Tyagi
Keyword(s):  
Energy Efficient ◽  
High Performance ◽  
Low Cost ◽  
Electronic Devices ◽  
World Health ◽  
Blind People ◽  
Audio Signals ◽  
Sensor Module ◽  
Distance Sensor ◽  
Health Organization

People with visual impairments often depend on outside help that can be provided by the following agencies Humans, well-trained dogs, or special electronic devices are used as decision support systems. Principal The problem for blind people is how to navigate where they want to go. Those people need Help from other people with good eyesight. As described by the World Health Organization, 10% of people with visual impairment have There is no functional vision to help them move safely without assistance. This article is Designed to help blind people overcome visual defects through the use of other senses, such as sound and Touch. The system uses the Atmega328 microcontroller, which is a high performance 8-bit AVR RISC microcontroller. To detect the distance, the system uses HCSR04, an ultrasonic range Finder distance sensor module. The sensor module is designed to use sensors to measure distance The SONAR or RADAR principle uses ultrasound to determine the distance of an object. This The system also includes a buzzer that generates an alarm sound and a motor that generates vibration. Sign. The system uses audio and vibration signals to notify users of upcoming obstacles. What The distance between the glove and the obstacle, the frequency of the audio signals and vibration is reduced Increase. Therefore, the system helps to simplify the navigation process for those who need it. The system provides a Low-cost, reliable, portable, energy-efficient and powerful navigation solutions Response time is short.

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Challenges And Energy Efficient Techniques For High Performance Wireless Communications

2015 ◽  
Vol 1 (4) ◽  
pp. 1-12
Author(s):  
Chidadala Janardhan ◽  
◽  
Bhagath Pyda ◽  
J. Manohar ◽  
K. V. Ramanaiah ◽  
...  
Keyword(s):  
Wireless Communications ◽  
Energy Efficient ◽  
High Performance

Validated Stability Indicating HPTLC Method for the Estimation of Amoxapine in Different Stress Conditions

2019 ◽  
Vol 15 (3) ◽  
pp. 273-279
Author(s):  
Shweta G. Rangari ◽  
Nishikant A. Raut ◽  
Pradip W. Dhore
Keyword(s):  
High Performance ◽  
Limit Of Detection ◽  
Degradation Products ◽  
Analysis Data ◽  
Peak Height ◽  
Good Resolution ◽  
Stability Indicating ◽  
Limit Of Quantitation ◽  
Wide Range ◽  
Hptlc Method

Background:The unstable and/or toxic degradation products may form due to degradation of drug which results into loss of therapeutic activity and lead to life threatening condition. Hence, it is important to establish the stability characteristics of drug in various conditions such as in temperature, light, oxidising agent and susceptibility across a wide range of pH values.Introduction:The aim of the proposed study was to develop simple, sensitive and economic stability indicating high performance thin layer chromatography (HPTLC) method for the quantification of Amoxapine in the presence of degradation products.Methods:Amoxapine and its degraded products were separated on precoated silica gel 60F254 TLC plates by using mobile phase comprising of methanol: toluene: ammonium acetate (6:3:1, v/v/v). The densitometric evaluation was carried out at 320 nm in reflectance/absorbance mode. The degradation products obtained as per ICH guidelines under acidic, basic and oxidative conditions have different Rf values 0.12, 0.26 and 0.6 indicating good resolution from each other and pure drug with Rf: 0.47. Amoxapine was found to be stable under neutral, thermal and photo conditions.Results:The method was validated as per ICH Q2 (R1) guidelines in terms of accuracy, precision, ruggedness, robustness and linearity. A good linear relationship between concentration and response (peak area and peak height) over the range of 80 ng/spot to 720 ng/spot was observed from regression analysis data showing correlation coefficient 0.991 and 0.994 for area and height, respectively. The limit of detection (LOD) and limit of quantitation (LOQ) for area were found to be 1.176 ng/mL and 3.565 ng/mL, whereas for height, 50.063 ng/mL and 151.707 ng/mL respectively.Conclusion:The statistical analysis confirmed the accuracy, precision and selectivity of the proposed method which can be effectively used for the analysis of amoxapine in the presence of degradation products.

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