High-mobility organic single-crystalline transistors with anisotropic transport based on high symmetrical “H”-shaped heteroarene derivatives

Two highly symmetrical “H”-configuration heteroarene derivatives are synthesized with mobility of up to 15.6 cm2 V−1 s−1 for single-crystalline field effect transistors.

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High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l1193 ◽

2005 ◽

Vol 44 (No. 38) ◽

pp. L1193-L1195 ◽

Cited By ~ 51

Author(s):

Junya Nishii ◽

Akira Ohtomo ◽

Keita Ohtani ◽

Hideo Ohno ◽

Masashi Kawasaki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Single Crystalline

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High-performance organic field-effect transistors based on single-crystalline microribbons of a two-dimensional fused heteroarene semiconductor

Chemical Communications ◽

10.1039/c5cc03305e ◽

2015 ◽

Vol 51 (60) ◽

pp. 11961-11963 ◽

Cited By ~ 15

Author(s):

Yingfeng Wang ◽

Sufen Zou ◽

Jianhua Gao ◽

Huarong Zhang ◽

Guoqiao Lai ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

High Mobility ◽

Two Dimensional ◽

Organic Field Effect Transistors ◽

Single Crystalline

A remarkable high mobility of 17.9 cm2V−1s−1was obtained for single-crystalline OFET based on 2D molecule BTBTTBT microribbons.

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Stable growth of large-area single crystalline thin films from an organic semiconductor/polymer blend solution for high-mobility organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2016.09.006 ◽

2016 ◽

Vol 39 ◽

pp. 127-132 ◽

Cited By ~ 18

Author(s):

Junshi Soeda ◽

Toshihiro Okamoto ◽

Chikahiko Mitsui ◽

Jun Takeya

Keyword(s):

Thin Films ◽

Polymer Blend ◽

Organic Semiconductor ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Organic Field Effect Transistors ◽

Large Area ◽

Single Crystalline ◽

Stable Growth

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High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

Applied Physics Letters ◽

10.1063/1.4973205 ◽

2016 ◽

Vol 109 (26) ◽

pp. 262102 ◽

Cited By ~ 37

Author(s):

Juyeon Shin ◽

Young Mo Kim ◽

Youjung Kim ◽

Chulkwon Park ◽

Kookrin Char

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Mgo Substrate

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All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

Applied Sciences ◽

10.3390/app10196656 ◽

2020 ◽

Vol 10 (19) ◽

pp. 6656

Author(s):

Stefano Lai ◽

Giulia Casula ◽

Pier Carlo Ricci ◽

Piero Cosseddu ◽

Annalisa Bonfiglio

Keyword(s):

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Cost Effective ◽

Large Area ◽

Parylene C ◽

Biomedical Sensing ◽

Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Cited By ~ 61

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Barrier Layers

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High-Mobility Field Effect Transistors Based on Supramolecular Charge Transfer Nanofibres

Advanced Materials ◽

10.1002/adma.201203926 ◽

2012 ◽

Vol 25 (4) ◽

pp. 559-564 ◽

Cited By ~ 57

Author(s):

Abhay A. Sagade ◽

K. Venkata Rao ◽

Umesha Mogera ◽

Subi J. George ◽

Ayan Datta ◽

...

Keyword(s):

Charge Transfer ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility

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Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

Journal of Materials Chemistry C ◽

10.1039/d1tc04148g ◽

2022 ◽

Author(s):

Tien Dat Ngo ◽

Min Sup Choi ◽

Myeongjin Lee ◽

Fida Ali ◽

Won Jong Yoo

Keyword(s):

Fermi Level ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Two Dimensional ◽

Edge Contact ◽

Fermi Level Pinning ◽

P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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