High mobility field-effect transistors based on MoS2 crystal grown by the flux method

2021 ◽  
Author(s):  
Vilas S Patil ◽  
Jihyun Kim ◽  
Khushabu S Agrawal ◽  
Tuson Park ◽  
Junsin Yi ◽  
...  
2016 ◽  
Vol 109 (26) ◽  
pp. 262102 ◽  
Author(s):  
Juyeon Shin ◽  
Young Mo Kim ◽  
Youjung Kim ◽  
Chulkwon Park ◽  
Kookrin Char

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.


2012 ◽  
Vol 25 (4) ◽  
pp. 559-564 ◽  
Author(s):  
Abhay A. Sagade ◽  
K. Venkata Rao ◽  
Umesha Mogera ◽  
Subi J. George ◽  
Ayan Datta ◽  
...  

Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...


2016 ◽  
Vol 8 (41) ◽  
pp. 27546-27552 ◽  
Author(s):  
Zhaoli Gao ◽  
Hojin Kang ◽  
Carl H. Naylor ◽  
Frank Streller ◽  
Pedro Ducos ◽  
...  

2005 ◽  
Vol 6 (3) ◽  
pp. 105-110 ◽  
Author(s):  
Th.B. Singh ◽  
N. Marjanović ◽  
G.J. Matt ◽  
S. Günes ◽  
N.S. Sariciftci ◽  
...  

Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.


2015 ◽  
Vol 51 (33) ◽  
pp. 7156-7159 ◽  
Author(s):  
Xuejun Zhan ◽  
Ji Zhang ◽  
Sheng Tang ◽  
Yuxuan Lin ◽  
Min Zhao ◽  
...  

Pyrene fused PDI derivatives are unprecedentedly designed, with the bilateral one possessing a high mobility up to 1.13 cm2 V−1 s−1.


Carbon ◽  
2014 ◽  
Vol 68 ◽  
pp. 791-797 ◽  
Author(s):  
Sangchul Lee ◽  
Omokhodion David Iyore ◽  
Saungeun Park ◽  
Young Gon Lee ◽  
Srikar Jandhyala ◽  
...  

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