Asymmetric carrier transport and weak localization in few layer graphene grown directly on dielectric substrate

2021 ◽  
Author(s):  
Changgu Lee ◽  
Muhammad Sabbtain Abbas ◽  
Pawan Kumar Srivastava ◽  
Yasir Hassan
Keyword(s):  
Carrier Transport ◽  
Weak Localization ◽  
Dielectric Substrate ◽  
Energy Band Gap ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Layer Graphene ◽  
Cvd Method ◽  
Few Layer Graphene ◽  
Intrinsic Energy

Temperature-dependent electrical and magneto-transport measurements have been performed on devices comprised of few layer (4L) graphene grown directly on SiO2/Si substrates using a CVD method. Intrinsic energy band-gap of 4.6...

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Enhanced weak localization effect in few-layer graphene

2011 ◽  
Vol 13 (45) ◽  
pp. 20208 ◽  
Author(s):  
Yanping Liu ◽  
Wen Siang Lew ◽  
Li Sun
Keyword(s):  
Weak Localization ◽  
Layer Graphene ◽  
Localization Effect ◽  
Few Layer Graphene

scholarly journals High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 392
Author(s):  
Norifumi Endoh ◽  
Shoji Akiyama ◽  
Keiichiro Tashima ◽  
Kento Suwa ◽  
Takamasa Kamogawa ◽  
...  
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Bulk Crystal ◽  
Bulk Crystals ◽  
High Quality ◽  
Single Crystalline ◽  
Si Substrates ◽  
Layer Graphene ◽  
Device Type ◽  
Few Layer Graphene

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.

Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

RSC Advances ◽  
2016 ◽  
Vol 6 (103) ◽  
pp. 101347-101352 ◽  
Author(s):  
P. Dharmaraj ◽  
P. Sundara Venkatesh ◽  
Pravin Kumar ◽  
K. Asokan ◽  
K. Jeganathan
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Simple Method ◽  
Sio2 Substrate ◽  
Precise Control ◽  
Si Substrates ◽  
Layer Graphene ◽  
Direct Fabrication ◽  
Direct Growth ◽  
Few Layer Graphene

A simple method that enables the direct fabrication of few layer graphene on SiO2/Si substrates with precise control of layer thickness by implantation of C ions is explored.

Few-layer graphene synthesis on a dielectric substrate

Carbon ◽  
2012 ◽  
Vol 50 (4) ◽  
pp. 1503-1509 ◽  
Author(s):  
Tommi Kaplas ◽  
Deepika Sharma ◽  
Yuri Svirko
Keyword(s):  
Dielectric Substrate ◽  
Layer Graphene ◽  
Graphene Synthesis ◽  
Few Layer Graphene

Weak localization in few-layer graphene grown on copper foils by chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (14) ◽  
pp. 5242-5246 ◽  
Author(s):  
Wenrong Wang ◽  
Liang Chen ◽  
Zhe Wang ◽  
Yuchen Wang ◽  
Tie Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Layer Graphene ◽  
Copper Foils ◽  
Few Layer Graphene

scholarly journals Weak localization in electric-double-layer gated few-layer graphene

2D Materials ◽  
2017 ◽  
Vol 4 (3) ◽  
pp. 035006 ◽  
Author(s):  
R S Gonnelli ◽  
E Piatti ◽  
A Sola ◽  
M Tortello ◽  
F Dolcini ◽  
...  
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Weak Localization ◽  
Layer Graphene ◽  
Few Layer Graphene

Temperature dependent thermoelectric properties of freestanding few layer graphene/polyvinylidene fluoride composite thin films

2013 ◽  
Vol 165 ◽  
pp. 56-59 ◽  
Author(s):  
Corey A. Hewitt ◽  
Alan B. Kaiser ◽  
Matt Craps ◽  
Richard Czerw ◽  
Siegmar Roth ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Polyvinylidene Fluoride ◽  
Temperature Dependent ◽  
Composite Thin Films ◽  
Layer Graphene ◽  
Few Layer Graphene

Modern methods of obtaining few-layer graphene structures by the method of electrochemical exfoliation of graphite

2018 ◽  
pp. 5-15
Author(s):  
E. S. Bakunin ◽  
◽  
E. Yu. Obraztsova ◽  
A. V. Rukhov ◽  
◽  
...  
Keyword(s):  
Electrochemical Exfoliation ◽  
Layer Graphene ◽  
Modern Methods ◽  
Few Layer Graphene ◽  
Graphene Structures
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