Reusable Piezocatalytic Water Disinfection Activity of CVD Grown WS2 Few-layer on Sapphire Substrate

2022 ◽  
Author(s):  
Deepa Thakur ◽  
Moolchand Sharma ◽  
Viswanath Balakrishnan ◽  
Rahul Vaish
Keyword(s):  
Mechanical Stress ◽  
Sapphire Substrate ◽  
Reaction Rate ◽  
Charge Carriers ◽  
Water Disinfection ◽  
Chemical Energy ◽  
Free Charge

Piezocatalysis of semiconductors is an arising technology that transforms mechanical stress into chemical energy to enhance reaction rate with piezo-generated free charge carriers. In the present work, CVD-grown few-layer WS2...

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

Dielectric relaxation of free charge carriers in some fluorite-type solid solutions

1998 ◽  
Vol 244 ◽  
pp. 201-206 ◽  
Author(s):  
E.F. Hairetdinov ◽  
N.F. Uvarov ◽  
J.-M. Reau ◽  
P. Hagenmuller
Keyword(s):  
Dielectric Relaxation ◽  
Solid Solutions ◽  
Charge Carriers ◽  
Free Charge ◽  
Fluorite Type

scholarly journals Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Dong Luo ◽  
Yuan-Hua Lin ◽  
Xuehui Zhang ◽  
Deping Liu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Double Exchange ◽  
Host Lattice ◽  
Charge Carriers ◽  
Fe Doping ◽  
Free Charge ◽  
Ferromagnetic Properties ◽  
Electrospinning Method ◽  
Fe Ions

Ni1−xFexOnanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

Multiphoton Absorption by Free Charge Carriers in Semiconductors

1976 ◽  
Vol 73 (2) ◽  
pp. 553-564 ◽  
Author(s):  
E. P. Pokatilov ◽  
V. M. Fomin
Keyword(s):  
Charge Carriers ◽  
Multiphoton Absorption ◽  
Free Charge

scholarly journals Dynamics of Strong Coupling Between Free Charge Carriers in Organometal Halide Perovskites and Aluminum Plasmonic States

2022 ◽  
Vol 9 ◽  
Author(s):  
Yang Luo ◽  
Hai Wang ◽  
Le-Yi Zhao ◽  
Yong-Lai Zhang
Keyword(s):  
Strong Coupling ◽  
Transient Absorption ◽  
Perovskite Solar Cells ◽  
Coupled System ◽  
Free Carrier ◽  
Charge Carriers ◽  
Free Charge ◽  
Free Carriers ◽  
Halide Perovskites ◽  
Poor Absorption

We have investigated a strong coupled system composed of a MAPbIxCl3-x perovskite film and aluminum conical nanopits array. The hybrid states formed by surface plasmons and free carriers, rather than the traditional excitons, is observed in both steady-state reflection measurements and transient absorption spectra. In particular, under near upper band resonant excitation, the bleaching signal from the band edge of uncoupled perovskite was completely separated into two distinctive bleaching signals of the hybrid system, which is clear evidence for the formation of strong coupling states between the free carrier–plasmon state. Besides this, a Rabi splitting up to 260 meV is achieved. The appearance of the lower bands can compensate for the poor absorption of the perovskite in the NIR region. Finally, we found that the lifetime of the free carrier–SP hybrid states is slightly shorter than that of uncoupled perovskite film, which can be caused by the ultrafast damping of the SPs modes. These peculiar features on the strong coupled hybrid states based on free charge carriers can open new perspectives for novel plasmonic perovskite solar cells.

scholarly journals Нерезонансное обращение волнового фронта света на поверхности пленок GaN при большой мощности оптического возбуждения

2019 ◽  
Vol 53 (1) ◽  
pp. 26
Author(s):  
А.Н. Грузинцев ◽  
А.Н. Редькин
Keyword(s):  
Photon Energy ◽  
Signal Intensity ◽  
Room Temperature ◽  
Phase Conjugation ◽  
Charge Carriers ◽  
Nitrogen Laser ◽  
Free Charge ◽  
Laser Pumping ◽  
Infrared Spectral ◽  
First Time

AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

scholarly journals Edge Absorption of thin Films –Ga2O3

2015 ◽  
Vol 16 (2) ◽  
pp. 302-306
Author(s):  
O.M. Bordun ◽  
B.O. Bordun ◽  
V.B. Lushchanets ◽  
I.Yo. Kukharskyy
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Absorption Edge ◽  
Optical Band Gap ◽  
Fundamental Absorption Edge ◽  
Hydrogen Atmosphere ◽  
Argon Atmosphere ◽  
Charge Carriers ◽  
Free Charge ◽  
Moss Effect

Fundamental absorption edge of b–Ga2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated, using the method of optical spectroscopy. It was ascertained that the optical band gap Eg increases from 4.60 to 4.65 eV after the heat treatment films in argon atmosphere and to 5.20 eV after the reduction of annealed films in a hydrogen atmosphere. Consolidated effective mass of free charge carriers in b–Ga2O3 films after annealing and after reduction in hydrogen was estimated. It was found that the concentration of charge carriers after heat treatment in argon atmosphere is 7.30´1017 cm–3 and after reduction in hydrogen, is 2.62´1019 cm–3, which is typical for degenerated semiconductors. It was shown that the shift of fundamental absorption edge in thin films b–Ga2O3 after reduction in hydrogen is caused by Burstein-Moss effect.

Sign in / Sign up

Export Citation Format

Share Document