Нерезонансное обращение волнового фронта света на поверхности пленок GaN при большой мощности оптического возбуждения
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AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
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1999 ◽
Vol 142
(1-4)
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pp. 629-632
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1996 ◽
Vol 54
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pp. 680-681
2020 ◽
Vol 12
(1)
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pp. 01017-1-01017-4
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1998 ◽
Vol 244
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pp. 201-206
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