Self-supported ultrathin plasmonic film for ultrafast optical switching

Abstract The interaction between ultrafast lasers and magnetic materials is an appealing topic. It not only involves interesting fundamental questions that remain inconclusive and hence need further investigation, but also has the potential to revolutionize data storage technologies because such an opto-magnetic interaction provides an ultrafast and energy-efficient means to control magnetization. Fruitful progress has been made in this area over the past quarter century. In this paper, we review the state-of-the-art experimental and theoretical studies on magnetization dynamics and switching in ferromagnetic materials that are induced by ultrafast lasers. We start by describing the physical mechanisms of ultrafast demagnetization based on different experimental observations and theoretical methods. Both the spin-flip scattering theory and the superdiffusive spin transport model will be discussed in detail. Then, we will discuss laser-induced torques and resultant magnetization dynamics in ferromagnetic materials. Recent developments of all-optical switching (AOS) of ferromagnetic materials towards ultrafast magnetic storage and memory will also be reviewed, followed by the perspectives on the challenges and future directions in this emerging area.

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Integrated QPM sum-frequency generation interferometer device for ultrafast optical switching

IEEE Photonics Technology Letters ◽

10.1109/68.959364 ◽

2001 ◽

Vol 13 (11) ◽

pp. 1203-1205 ◽

Cited By ~ 21

Author(s):

T. Suhara ◽

H. Ishizuki

Keyword(s):

Optical Switching ◽

Sum Frequency Generation ◽

Sum Frequency ◽

Ultrafast Optical ◽

Frequency Generation

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Six-port optical switch for cluster-mesh photonic network-on-chip

Nanophotonics ◽

10.1515/nanoph-2017-0116 ◽

2018 ◽

Vol 7 (5) ◽

pp. 827-835 ◽

Cited By ~ 4

Author(s):

Hao Jia ◽

Ting Zhou ◽

Yunchou Zhao ◽

Yuhao Xia ◽

Jincheng Dai ◽

...

Keyword(s):

High Performance ◽

Optical Switching ◽

Optical Switch ◽

Optical Signal ◽

Network On Chip ◽

Transmission Experiment ◽

Photonic Network ◽

Benes Network ◽

On Chip ◽

Spectral Responses

AbstractPhotonic network-on-chip for high-performance multi-core processors has attracted substantial interest in recent years as it offers a systematic method to meet the demand of large bandwidth, low latency and low power dissipation. In this paper we demonstrate a non-blocking six-port optical switch for cluster-mesh photonic network-on-chip. The architecture is constructed by substituting three optical switching units of typical Spanke-Benes network to optical waveguide crossings. Compared with Spanke-Benes network, the number of optical switching units is reduced by 20%, while the connectivity of routing path is maintained. By this way the footprint and power consumption can be reduced at the expense of sacrificing the network latency performance in some cases. The device is realized by 12 thermally tuned silicon Mach-Zehnder optical switching units. Its theoretical spectral responses are evaluated by establishing a numerical model. The experimental spectral responses are also characterized, which indicates that the optical signal-to-noise ratios of the optical switch are larger than 13.5 dB in the wavelength range from 1525 nm to 1565 nm. Data transmission experiment with the data rate of 32 Gbps is implemented for each optical link.

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Tunable Infrared Optical Switch Based on Vanadium Dioxide

Nanomaterials ◽

10.3390/nano11112988 ◽

2021 ◽

Vol 11 (11) ◽

pp. 2988

Author(s):

Qi Wang ◽

Shijie Zhang ◽

Chen Wang ◽

Rui Li ◽

Tianhan Cai ◽

...

Keyword(s):

Thin Film ◽

Vanadium Dioxide ◽

Optical Switching ◽

Modulation Depth ◽

Optical Switch ◽

Extinction Ratio ◽

Infrared Region ◽

Metallic Phase ◽

Ultrafast Switching ◽

Difference Time

A tunable infrared optical switch based on a plasmonic structure consisting of aluminum nanoarrays with a thin film of vanadium dioxide is proposed. This optical switch can realize arbitrary wavelength-selective optical switching in the mid-infrared region by altering the radii of the aluminum nanoarrays. Furthermore, since vanadium dioxide transforms from its low-temperature insulator phase to a high-temperature metallic phase when heated or applied voltage, the optical switch can achieve two-way switching of its “ON” and “OFF” modes. Finite-difference time-domain software is used to simulate the performance of the proposed infrared optical switch. Simulation results show that the switch offers excellent optical performances, that the modulation depth can reach up to 99.4%, and that the extinction ratio exceeds −22.16 dB. In addition, the phase transition time of vanadium dioxide is on the femtosecond scale, which means that this optical switch based on a vanadium dioxide thin film can be used for ultrafast switching.

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MODEL AND ALGORITHM OF A 4 × 4 OPTICAL SWITCH

VESTNIK OF ASTRAKHAN STATE TECHNICAL UNIVERSITY SERIES MANAGEMENT COMPUTER SCIENCE AND INFORMATICS ◽

10.24143/2072-9502-2019-2-48-55 ◽

2019 ◽

pp. 48-55

Author(s):

Igor Olegovich Barabanov ◽

Elizaveta Aleksandrovna Barabanova ◽

Konstantin Vytovtov ◽

Natalia Sergeevna Maltseva

Keyword(s):

Communication Systems ◽

Optical Switching ◽

Optical Switch ◽

Main Element ◽

External Control ◽

Switching Element ◽

Operation Speed ◽

Switch Operation ◽

Optical Communication Systems ◽

Analysis Of Results

The main objective in improving optical communication systems, which are widely developed nowadays, is a solution of the problem of operation speed of the entire commutation system, which is limited by quick action of the outer elements of the management system. There have been presented the structure and algorithm of a radically new commutation system based on the 4x4 optical switch operation. The specific feature of the switch operation is the lack of external control over switching process. The operation principle of the main element of the 4×4 optical switch - an optical switching element - has been considered. The switching element is a photonic crystal consisting of a layer of metamaterial, a dielectric substance and ferrite films. The results of the numerical simulation of the switch are presented. The analysis of results allows to infer that the proposed switch can be used in modern communication systems.

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INTERBAND TWO-PHOTON TRANSITION IN MOTT INSULATOR AS A NEW MECHANISM FOR ULTRAFAST OPTICAL NONLINEARITY

International Journal of Modern Physics B ◽

10.1142/s0217979201008305 ◽

2001 ◽

Vol 15 (28n30) ◽

pp. 3628-3632 ◽

Cited By ~ 4

Author(s):

M. Ashida ◽

T. Ogasawara ◽

N. Motoyama ◽

H. Eisaki ◽

S. Uchida ◽

...

Keyword(s):

Excited State ◽

Optical Switching ◽

Near Infrared ◽

Optical Nonlinearity ◽

Infrared Region ◽

Pump Probe ◽

Two Photon ◽

Ultrafast Optical ◽

Order Of Magnitude ◽

Probe Transmission

The dimensionality dependence of optical nonlinearity in cuprates was investigated by sub-picosecond pump-probe transmission measurements in the near-infrared region. It was found that cuprates with one-dimensional Cu-O networks show nonlinearity one order of magnitude larger than that of conventional band semiconductors and picosecond relaxation of the excited state. In contrast, a two-dimensional cuprate shows one order of magnitude smaller nonlinearity and slower decay of the excited state, as well as picosecond relaxation. The possibility for application of the present material to all-optical switching devices is also discussed.

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