scholarly journals Non-equilibrium thermal annealing of a polymer blend in bilayer settings for complex micro/nano-patterning

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10183-10193
Author(s):  
Ankur Pandey ◽  
Kaniska Murmu ◽  
Partho Sarathi Gooh Pattader
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polymer Blend ◽  
Morphological Evolution ◽  
Polymer Thin Film ◽  
Nano Patterning ◽  
Non Equilibrium

Fast morphological evolution of polymer blend dictated by underlying polymer thin film upon rapid thermal annealing at high temperature.

0.35 μm Technologies in Japan

1995 ◽  
Vol 402 ◽  
Author(s):  
Takamaro Kikkawa ◽  
Isami Sakai
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
The Other ◽  
Design Rule ◽  
Gate Electrodes ◽  
Diffusion Layers ◽  
Other Hand ◽  
Dual Gate

AbstractThis paper describes silicide and salicide technologies in Japan for 0.35 μm CMOS ULSIs and beyond. Polycide gate electrodes have been developed for CMOS devices from 1.0 μm to 0.35 μm design rule regime, in which Wsi2 has been used dominantly as a silicide gate material. On the other hand, silicide films are formed selectively on source/drain diffusion layers by salicide techniques, in which TiSi2 is used as a salicide material. TiSi2 is also used as a salicide material of both gate electrodes and source/drain diffusion layers for dual gate (n+/p+) CMOS. The TiSi2 thin film is formed by Ti sputtering and subsequent rapid thermal annealing. A preamorphization technique before Ti sputtering has been developed to obtain equal silicide properties on p+ and n+ diffusion layers. A high-temperature Ti sputtering technique has been developed in conjunction with pre-amorphization. CoSi2 and NiSi have also been developed as salicide materials for quartermicron CMOS and beyond.

Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film
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