One-Step Synthesized PbSe Nanocrystal Inks Decorated 2D MoS2 Heterostructure for High Stability Photodetectors with Photoresponse Extend to Near-Infrared Region

2022 ◽  
Author(s):  
Mingfa Peng ◽  
Yi Tao ◽  
Xuekun Hong ◽  
Yushen Liu ◽  
Zhen Wen ◽  
...  
Keyword(s):  
High Stability ◽  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Functional Materials ◽  
Infrared Region ◽  
Metal Dichalcogenides ◽  
One Step ◽  
Layered Transition Metal ◽  
Nanocrystal Inks

Two-dimensional layered transition metal dichalcogenides (TMDs) have been widely employed as functional materials in promising electronics and optoelectronic devices due to their unique physical and outstanding electronic properties. However, 2D...

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

scholarly journals The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping ◽  
Sharp Interfaces

AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1543-1560 ◽  
Author(s):  
He Tian ◽  
Matthew L. Chin ◽  
Sina Najmaei ◽  
Qiushi Guo ◽  
Fengnian Xia ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Phonon Coupling and Dielectric Response in 2D Semiconductor

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Coupling Mechanism ◽  
Two Dimensional ◽  
Electron Hole ◽  
Exciton Coupling ◽  
Gain Energy ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal ◽  
The Impact

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.

scholarly journals Realization of Lasing Emission from One Step Fabricated WSe2 Quantum Dots

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 538
Author(s):  
Pengpeng Ren ◽  
Wenfei Zhang ◽  
Yiqun Ni ◽  
Di Xiao ◽  
Honghao Wan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Transition Metal Dichalcogenides ◽  
Laser Cavity ◽  
Threshold Value ◽  
Gain Medium ◽  
Excitation Wavelength ◽  
Excitation Threshold ◽  
Ultrasonic Probe ◽  
Metal Dichalcogenides ◽  
One Step

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) quantum dots (QDs) are the vanguard due to their unique properties. In this work, WSe2 QDs were fabricated via one step ultrasonic probe sonication. Excitation wavelength dependent photoluminescence (PL) is observed from WSe2 QDs. Room-temperature lasing emission which benefits from 3.7 times enhancement of PL intensity by thermal treatment at ~470 nm was achieved with an excitation threshold value of ~3.5 kW/cm2 in a Fabry–Perot laser cavity. To the best of our knowledge, this is the first demonstration of lasing emission from TMDCs QDs. This indicates that TMDCs QDs are a superior candidate as a new type of laser gain medium.

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