ULTRA-HIGH SENSITIVITY VANADIUM–VANADIUM SESQUIOXIDE–VANADIUM (V–V2O3–V) SYMMETRIC TUNNEL JUNCTION DIODE

2019 ◽  
Vol 26 (08) ◽  
pp. 1950041
Author(s):  
MOHAMED ABDEL-RAHMAN
Keyword(s):  
Tunnel Junction ◽  
High Sensitivity ◽  
Dynamic Resistance ◽  
Applied Bias ◽  
Current Voltage ◽  
Vanadium Sesquioxide ◽  
Theoretical Predictions ◽  
Novel Material ◽  
Junction Diode ◽  
Mim Diode

In this paper, a symmetrical MIM tunnel junction diode with a novel material combination, vanadium–vanadium sequioxide–vanadium (V–V2O3–V) is fabricated and electrically characterized. Analysis of the measured current-voltage ([Formula: see text]–[Formula: see text] characteristics of the fabricated MIM diode revealed an ultra-high diode sensitivity of [Formula: see text]9.24[Formula: see text][Formula: see text] at an applied bias of [Formula: see text]0.104[Formula: see text]V. Based on the measured [Formula: see text]–[Formula: see text] characteristics, theoretical predictions were performed showing that the diode’s dynamic resistance can be tuned for matching to coupled antennas, in rectenna structures, whilst maintaining high levels of sensitivities using practically realizable V2O3 insulator thicknesses.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

scholarly journals Genetic-based optimization of a multi insulator tunneling diode for THz energy harvesting

2020 ◽  
Vol 7 (1) ◽  
pp. 60-64
Author(s):  
Mazen Shanawani ◽  
Diego Masotti ◽  
Alessandra Costanzo
Keyword(s):  
Energy Harvesting ◽  
Physical Parameters ◽  
Dynamic Resistance ◽  
Figures Of Merit ◽  
Tunneling Diodes ◽  
Optimization Framework ◽  
Tunneling Diode ◽  
Current Voltage ◽  
The Impact ◽  
Current Voltage Relation

AbstractThe deployment of multi-insulator tunneling diodes has recently had more attention to be used as rectifiers in energy harvesting rectennas with good potentiality for a millimeter and terahertz range. However, with the rather complicated math to obtain the current–voltage relation, it is difficult to evaluate the design figures of merit (FOM)s such as asymmetry, nonlinearity, responsivity, and dynamic resistance and monitor the impact of changing physical parameters on them. This complicates the decision-making process for the required physical parameters. In this work, a heuristic optimization framework using genetic algorithm is suggested using the transfer matrix method to find the combination of physical parameters which satisfies the minimum required FOM set by users and weighted by their preference.

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology.

2002 ◽  
Vol 744 ◽  
Author(s):  
Galina Khlyap ◽  
Victor Brytan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Continuous Mode ◽  
Applied Bias ◽  
Near Ir ◽  
Current Voltage ◽  
Exponential Character ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Spectral Ranges

ABSTRACTElectric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.

Elastometric Sensing Using Higher Flexural Modes of Microcantilevers

2007 ◽  
Author(s):  
Matthew Spletzer ◽  
Arvind Raman ◽  
Ron Reifenberger
Keyword(s):  
Thin Films ◽  
Elastic Property ◽  
High Sensitivity ◽  
Time Varying ◽  
Small Drop ◽  
Photosensitive Polymer ◽  
Resonance Frequencies ◽  
Microcantilever Arrays ◽  
Theoretical Predictions ◽  
Property Changes

We present a method to detect the non-uniform elastic property changes of sensor coatings on microcantilever arrays due to radiation, analyte binding or adsorption. The method uses measurements of the resonance frequencies of higher order flexural modes to identify with high sensitivity the location and magnitude of non-uniform elasticity changes in a microcantilever coating. We validate theoretical predictions and demonstrate the method by monitoring the time evolution of resonance frequencies of different flexural modes of microcantilevers functionalized with a small drop of a photosensitive polymer as it is exposed to ultraviolet (UV) radiation. The method is particularly well-suited for measuring quantitatively the time varying elastic properties of thin films or biological materials attached to microcantilevers.

Crack Velocity Measurements in Sea Ice

1994 ◽  
Vol 362 ◽  
Author(s):  
Oleg Gluschenkov ◽  
Victor Petrenko
Keyword(s):  
Sea Ice ◽  
Electrical Resistance ◽  
Crack Velocity ◽  
Electromagnetic Emission ◽  
High Sensitivity ◽  
Unfrozen Water ◽  
Dynamic Resistance ◽  
Velocity Measurements ◽  
Water Ice ◽  
Crack Dynamics

AbstractTo study crack dynamics in sea ice fast measurements of ice electrical resistance and an electromagnetic emission (EME) from cracks were used. The sample dimensions ranged from 0.05 to 30 meters. In a laboratory grown fresh water ice crack velocities varied from a few hundreds to a thousand meters per second while in the natural sea ice crack velocity was very low, about 10 m/s. This remarkable difference in the crack velocities is likely due to the dynamic resistance of unfrozen water in brine pockets and channels and to the high ductility of sea ice. It was found that the cracks propagate in ice discontinuously owing to the strong interaction with such microstructural elements as liquid inclusions and grain boundaries. The high sensitivity of the method allowed to detect nucleation of very first microcracks.

Measurement of sheath characteristics in the presence of convection and ionization

1996 ◽  
Vol 74 (9-10) ◽  
pp. 671-675 ◽  
Author(s):  
R. M. Clements ◽  
J. R. Dawe ◽  
S. A. H. Rizvi ◽  
P. R. Smy
Keyword(s):  
Boundary Layer ◽  
Plasma Electron ◽  
Experimental Results ◽  
Ion Density ◽  
Current Voltage ◽  
Planar Grid ◽  
Theoretical Predictions ◽  
Flame Plasma ◽  
Theoretical Paper ◽  
Good Agreement

A flame plasma whose electron and (or) ion density can be varied over several orders of magnitude is constrained to flow perpendicular to a planar grid Langmuir probe. The probe is biased negative to the plasma, and the current–voltage characteristics and the thickness of the ion sheath formed at the probe are measured. The level of the electron and (or) ion density is set within a range at which the probe current due to thermal ionization throughout the sheath is comparable with the current of ions convected into the sheath. The experimental results are compared with the predictions of a recent theoretical paper that calculates the effect of recombination upon the characteristics of planar, cylindrical, and spherical probes with boundary layer sheaths. The theoretical predictions and experimental results for an idealized planar configuration show good agreement over wide ranges of variation of probe bias and plasma electron and (or) ion density. This verification of the theoretical planar electrode – perpendicular-flow model, which is the basis for all three boundary layer relations, is seen as providing strong backing for these relations, which have application to ionization measurements in various forms of recombinant plasma.

scholarly journals Voltage Relaxation to Detect the Onset of Lithium Plating on Graphite for Fast Charging

2020 ◽  
Author(s):  
Zachary M. Konz ◽  
Eric J. McShane ◽  
Bryan D. McCloskey
Keyword(s):  
High Performance ◽  
High Sensitivity ◽  
Open Circuit ◽  
Battery Management System ◽  
Battery Management ◽  
Portable Electronics ◽  
Current Voltage ◽  
Fast Charging ◽  
Initial Onset ◽  
Range Anxiety

Li-ion battery fast charging is critical to reduce electric vehicle ‘range anxiety’ and enable emerging technologies such as aerial drones and high-performance portable electronics. Fast charging is primarily limited by lithium plating on graphite, which can cause capacity fade and catastrophic cell shorting. The ability to detect the initial onset of lithium plating using easily accessible battery management system parameters (current, voltage, and capacity) would dramatically improve the safety of fast charging protocols. In this work, we highlight the application of a differential open-circuit voltage analysis (dOCV) to detect when Li plating first begins during room temperature fast charging. We quantify the Li detection limit of the technique to be approximately 4 mAh plated Li per gram graphite, showing that this method has high sensitivity and significant commercial promise.

scholarly journals Voltage Relaxation to Detect the Onset of Lithium Plating on Graphite for Fast Charging

2020 ◽  
Author(s):  
Zachary M. Konz ◽  
Eric J. McShane ◽  
Bryan D. McCloskey
Keyword(s):  
High Performance ◽  
High Sensitivity ◽  
Open Circuit ◽  
Battery Management System ◽  
Battery Management ◽  
Portable Electronics ◽  
Current Voltage ◽  
Fast Charging ◽  
Initial Onset ◽  
Range Anxiety

Li-ion battery fast charging is critical to reduce electric vehicle ‘range anxiety’ and enable emerging technologies such as aerial drones and high-performance portable electronics. Fast charging is primarily limited by lithium plating on graphite, which can cause capacity fade and catastrophic cell shorting. The ability to detect the initial onset of lithium plating using easily accessible battery management system parameters (current, voltage, and capacity) would dramatically improve the safety of fast charging protocols. In this work, we highlight the application of a differential open-circuit voltage analysis (dOCV) to detect when Li plating first begins during room temperature fast charging. We quantify the Li detection limit of the technique to be approximately 4 mAh plated Li per gram graphite, showing that this method has high sensitivity and significant commercial promise.

scholarly journals Double-Gap Magnetic Flux Concentrator Design for High-Sensitivity Magnetic Tunnel Junction Sensors

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4475 ◽  
Author(s):  
Jiafei Hu ◽  
Minhui Ji ◽  
Weicheng Qiu ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
Tunnel Junction ◽  
High Performance ◽  
Three Dimensional ◽  
Magnetic Tunnel Junction ◽  
High Sensitivity ◽  
Element Model ◽  
Ion Milling ◽  
Field Amplification ◽  
Flux Concentrator

To improve the sensitivity of the magnetic tunnel junction(MTJ)sensor, a novel architecture for a double-gap magnetic flux concentrator (MFC) was studied theoretically and experimentally in this paper. The three-dimensional finite element model of magnetic flux was established to optimize the magnetic field amplification factor, with different gaps. The simulation results indicate that the sensitivity of an MTJ sensor with a double-gap MFC can be significantly better than that of a sensor with a traditional single-gap MFC, due to the fact that the magnetic magnification sharply increases with the decrease in effective gap width. Besides this, the half-bridge MTJ sensors with the double-gap MFC were fabricated using photolithography, ion milling, evaporation, and electroplating processes. Experimental results show that the sensitivity of the MTJ sensor increased by ten times compared to the sensor without the double-gap MFC, which underlines the theoretical predictions. Furthermore, there is no significant increase in the sensor noise. The work in this paper contributes to the development of high-performance MTJ sensors.

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