Asymmetric structure with high electric–thermal conversion efficiency for nanoscale phase change memory based on three‐dimensional simulation

2015 ◽  
Vol 10 (2) ◽  
pp. 76-80
Author(s):  
Tian Lan ◽  
Jinjie Sun ◽  
Xiao Min Cheng ◽  
Jiao Zhou ◽  
Xiangshui Miao
Keyword(s):  
Phase Change ◽  
Conversion Efficiency ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Thermal Conversion ◽  
Asymmetric Structure ◽  
Dimensional Simulation ◽  
Change Memory

Three-Dimensional Simulation of Proposed Ring-Confined-Chalcogenide Phase-Change Memory for Reducing Reset Operation Current

2016 ◽  
Vol 698 ◽  
pp. 149-153
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
3 Dimensional ◽  
Temperature Distributions ◽  
Reset Operation ◽  
Dimensional Finite Element ◽  
Higher Temperature ◽  
Dimensional Simulation ◽  
Change Memory

In this paper, we proposed a phase-change memory (PCM) structure which has a ring confined chalcogenide (RCC) for reducing reset operation current. The temperature distributions of normal bottom contact (NBC), confined chalcogenide (CC) and proposed RCC PCMs were simulated by 3 dimensional finite element method. It was very clear that a much higher temperature can be obtained for RCC than NBC cell at a certain programming current. The programming characteristics also exhibited that the operation current of RCC cell can be as low as about 45% of NBC cell while that of CC cell was about 82% of CC cell.

Thermal analysis of nonvolatile and non rotation phase change memory cell

2003 ◽  
Vol 803 ◽  
Author(s):  
L. P. Shi ◽  
T. C. Chong ◽  
J. M. Li ◽  
H. X. Yang ◽  
J. Q. Mou
Keyword(s):  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Flow Characteristics ◽  
Random Access ◽  
Current Density Distribution ◽  
Memory Cell ◽  
Temperature History ◽  
Change Memory

ABSTRACTIn this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.

scholarly journals An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Wang ◽  
Si-Di Gong ◽  
Jing Wen ◽  
Ci Hui Yang
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Data Storage ◽  
Writing Process ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Scanning Probe ◽  
Three Dimensional Model ◽  
Current Voltage Curve ◽  
Change Memory

Scanning probe phase-change memory (SPPCM) has been widely considered as one of the most promising candidates for next-generation data storage devices due to its fast switching time, low power consumption, and potential for ultra-high density. Development of a comprehensive model able to accurately describe all the physical processes involved in SPPCM operations is therefore vital to provide researchers with an effective route for device optimization. In this paper, we introduce a pseudo-three-dimensional model to simulate the electrothermal and phase-transition phenomena observed during the SPPCM writing process by simultaneously solving Laplace’s equation to model the electrical process, the classical heat transfer equation, and a rate equation to model phase transitions. The crystalline bit region of a typical probe system and the resulting current-voltage curve obtained from simulations of the writing process showed good agreement with experimental results obtained under an equivalent configuration, demonstrating the validity of the proposed model.

scholarly journals Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Yuan Xue ◽  
Shuai Yan ◽  
Shilong Lv ◽  
Sannian Song ◽  
Zhitang Song
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Elevated Temperatures ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Amorphous Structure ◽  
Material System ◽  
Operation Speed ◽  
Change Memory

AbstractPhase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

MRS Bulletin ◽  
2019 ◽  
Vol 44 (09) ◽  
pp. 715-720 ◽  
Author(s):  
Min Zhu ◽  
Kun Ren ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Threshold Switching ◽  
Image Position ◽  
Change Memory

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