The synthesis of combinatorial logic functions using ULM 3 universal circuit elements

1983 ◽  
Vol 53 (2) ◽  
pp. 67 ◽  
Author(s):  
X. Chen
Keyword(s):  
Circuit Elements ◽  
Logic Functions

The fourth fundamental circuit element: principle and applications

2022 ◽  
Author(s):  
Young Sun
Keyword(s):  
Magnetic Flux ◽  
Degrees Of Freedom ◽  
Electronic Devices ◽  
Computing System ◽  
Electric Polarization ◽  
Circuit Element ◽  
Field Control ◽  
Pinched Hysteresis Loop ◽  
Circuit Elements ◽  
Logic Functions

Abstract The relationships between four basic circuit variables - voltage (v), current (i), charge (q), and magnetic flux (ϕ) - have defined three fundamental circuit elements: resistor, capacitor, and inductor. From a symmetry view, there is a fourth fundamental circuit element defined from the relationship between charge and magnetic flux. Historically, a device called memristor was considered to be the fourth element, but it has caused intense controversy because the memristor is conceived based on a nonlinear i-v relationship rather than a direct q-ϕ relationship. Alternatively, a direct correlation between trapped charge (q) and magnetic flux (ϕ) can be built up by employing the magnetoelectric (ME) effects, i.e., magnetic field control of electric polarization and electric field control of magnetization. In this review, we summarize recent progress on the principle and applications of the fourth circuit element based on the ME effects. Both the fourth linear element and nonlinear memelement, termed transtor and memtranstor, respectively, have been proposed and experimentally demonstrated. A complete relational diagram of fundamental circuit elements has been constructed. The transtor with a linear ME effect can be used in a variety of applications such as the energy harvester, tunable inductor, magnetic sensor, gyrator, and transformer etc. The memtranstor showing a pinched hysteresis loop has a great potential in developing low-power nonvolatile electronic devices. The principle is to utilize the states of the ME coefficient αE=dE/dH, instead of resistance, magnetization or electric polarization to store information. Both nonvolatile memories and logic functions can be implemented using the memtranstors, which provides a candidate route toward the logic-in-memory computing system. In addition, artificial synaptic devices that are able to mimic synaptic behaviors have also been realized using the memtranstor. The fourth circuit element and memelement based on the ME effects provide extra degrees of freedom to broaden circuit functionalities and develop advanced electronic devices.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

scholarly journals Skyrmion Logic-In-Memory Architecture for Maximum/Minimum Search

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 155
Author(s):  
Luca Gnoli ◽  
Fabrizio Riente ◽  
Marco Vacca ◽  
Massimo Ruo Roch ◽  
Mariagrazia Graziano
Keyword(s):  
High Efficiency ◽  
Digital Design ◽  
Control Logic ◽  
Minimum Number ◽  
Physical Simulations ◽  
Good Energy ◽  
Logic Functions ◽  
Time And Energy ◽  
Cmos Implementation ◽  
Maximum Minimum

In modern computing systems there is the need to utilize a large amount of data in maintaining high efficiency. Limited memory bandwidth, coupled with the performance gap between memory and logic, impacts heavily on algorithms performance, increasing the overall time and energy required for computation. A possible approach to overcome such limitations is Logic-In-Memory (LIM). In this paper, we propose a LIM architecture based on a non-volatile skyrmion-based recetrack memory. The architecture can be used as a memory or can perform advanced logic functions on the stored data, for example searching for the maximum/minimum number. The circuit has been designed and validated using physical simulations for the memory array together with digital design tools for the control logic. The results highlight the small area of the proposed architecture and its good energy efficiency compared with a reference CMOS implementation.

scholarly journals Training an asymmetric signal perceptron through reinforcement in an artificial chemistry

2014 ◽  
Vol 11 (93) ◽  
pp. 20131100 ◽  
Author(s):  
Peter Banda ◽  
Christof Teuscher ◽  
Darko Stefanovic
Keyword(s):  
State Of The Art ◽  
Chemical Species ◽  
Mass Action ◽  
Mass Action Kinetics ◽  
Dna Strand Displacement ◽  
Autonomous Adaptation ◽  
Biochemical Systems ◽  
Dna Strand ◽  
Logic Functions ◽  
Application Specific

State-of-the-art biochemical systems for medical applications and chemical computing are application-specific and cannot be reprogrammed or trained once fabricated. The implementation of adaptive biochemical systems that would offer flexibility through programmability and autonomous adaptation faces major challenges because of the large number of required chemical species as well as the timing-sensitive feedback loops required for learning. In this paper, we begin addressing these challenges with a novel chemical perceptron that can solve all 14 linearly separable logic functions. The system performs asymmetric chemical arithmetic, learns through reinforcement and supports both Michaelis–Menten as well as mass-action kinetics. To enable cascading of the chemical perceptrons, we introduce thresholds that amplify the outputs. The simplicity of our model makes an actual wet implementation, in particular by DNA-strand displacement, possible.

Programming Cell Adhesion for On-Chip Sequential Boolean Logic Functions

2017 ◽  
Vol 139 (30) ◽  
pp. 10176-10179 ◽  
Author(s):  
Xiangmeng Qu ◽  
Shaopeng Wang ◽  
Zhilei Ge ◽  
Jianbang Wang ◽  
Guangbao Yao ◽  
...  
Keyword(s):  
Cell Adhesion ◽  
Boolean Logic ◽  
On Chip ◽  
Logic Functions

scholarly journals Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Electrochemical Impedance ◽  
Protective Film ◽  
Current Decay ◽  
Glycine Solution ◽  
Current Densities ◽  
Circuit Elements ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Kinetics Of ◽  
Capacitive Charging

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.

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