Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

2010 ◽  
Vol 50 (1) ◽  
pp. 10401 ◽  
Author(s):  
Ö. Güllü ◽  
S. Asubay ◽  
M. Biber ◽  
T. Kiliçoglu ◽  
A. Türüt
2018 ◽  
Vol 15 (4) ◽  
pp. 388 ◽  
Author(s):  
D. Beljonne ◽  
J. Cornil ◽  
J. L. Brèdas ◽  
V. Coropceanu

<span>Inorganic semiconductor devices such as transistors have been instrumental in shaping the development of our society of information and communication. Recently, the electronics and photonics technologies have opened their materials base to organics, in particular p-conjugated oligomers and polymers. The goal with organics-based devices is not necessarily to attain or exceed the level of performance of inorganic semiconductor technologies...</span>


2020 ◽  
Vol 8 (6) ◽  
pp. 1915-1922 ◽  
Author(s):  
Yunhuan Yuan ◽  
Senpei Xie ◽  
Chaogang Ding ◽  
Xianbiao Shi ◽  
Jie Xu ◽  
...  

In this work, we proposed a scheme to obtain flexible wafer-size inorganic semiconductor devices and discussed their mechanism of this super flexibility.


MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 1005-1008 ◽  
Author(s):  
Moonsub Shim ◽  
Congjun Wang ◽  
David J. Norris ◽  
Philippe Guyot-Sionnest

Modern semiconductor technology has been enabled by the ability to control the number of carriers (electrons and holes) that are available in the semiconductor crystal. This control has been achieved primarily with two methods: doping, which entails the introduction of impurity atoms that contribute additional carriers into the crystal lattice; and charging, which involves the use of applied electric fields to manipulate carrier densities near an interface or junction. By controlling the carriers with these methods, the electrical properties of the semiconductor can be precisely tailored for a particular application. Accordingly, doping and charging play a major role in most modern semiconductor devices.


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