Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization

2019 ◽  
Vol 88 (3) ◽  
pp. 30102
Author(s):  
Tamila Anutgan ◽  
Mustafa Anutgan ◽  
İsmail Atilgan
Keyword(s):  
Electron Microscope ◽  
Silicon Nitride ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Light Emitting Diode ◽  
Nanocrystalline Phase ◽  
Light Emitting ◽  
Electroforming Process ◽  
Transmission Electron ◽  
The Cross

We report for the first time a direct transmission electron microscope (TEM) imaging of a cross-section of a silicon nitride-based light emitting diode (LED), produced via a method patented by our research group. Grown by plasma enhanced chemical vapor deposition (PECVD) technique the LED structure (glass/Cr/p+-nc-Si:H/i-SiNx:H/n+-nc-Si:H/ITO) was then subjected to a high forward voltage stress for one time only, i.e. electroforming process. After electroforming the LED exhibited a boosted visible light emission and memory effect. To study the structural effect of the electroforming on the as-deposited LED the cross-section was extracted by focused ion beam (FIB) technique directly from the electroformed diode and thus prepared for TEM imaging. Since the electroforming process caused crystallization of ITO and its breakup in some parts of the diode surface, the FIB was conducted for the cross-section containing some regions with ITO layer and some without ITO. TEM examination revealed the nanocrystalline phase formation within the intrinsic layer (i-SiNx:H) caused by the electroforming process. The average size and distribution of Si nanocrystallites formed inside i-SiNx:H was determined. The Si nanocrystallization within i-SiNx:H was compared for the regions with and without ITO layer. The previously proposed model describing the changes taken place in the diode during electroforming process was reconsidered in the light of this TEM analysis.

scholarly journals Rapid Cross-Section TEM Specimen Preparation of III-V Materials

2003 ◽  
Vol 11 (1) ◽  
pp. 29-32 ◽  
Author(s):  
R. Beanland
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Limited Resources ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Sample Type ◽  
Transmission Electron ◽  
Conventional Methods ◽  
The Cross

AbstractCross-section transmission electron microscope (TEM) specimen preparation of Ill-V materials using conventional methods can be a painful and time-consuming activity, with a day or more from receipt of a sample to examination in the TEM being the norm. This article describes the cross-section TEM specimen preparation technique used at Bookham Caswell. The usual time from start to finish is <1 hour. Up to 10 samples can be prepared at once, depending upon sample type. Most of the tools used are widely available and inexpensive, making the technique ideal for use in institutions with limited resources.

A Straight Nanopore Drilling by Transmission Electron Microscope

2013 ◽  
Vol 395-396 ◽  
pp. 179-183 ◽  
Author(s):  
Tsan Chu Lin ◽  
Y.C. Wang ◽  
Zhen Wang ◽  
Shou Yang Wang ◽  
Dau Chung Wang
Keyword(s):  
Electron Microscope ◽  
Heat Conduction ◽  
Silicon Nitride ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Silicon Oxide ◽  
Conduction Property ◽  
Transmission Electron

For nanopore drilling in a membrane by transmission electron microscope, a straight through-pore is in general not the case of the fabrication result. For instance, a silicon nitride nanopore with an hourglass profile and a silicon oxide nanopore with a pyramid cross-section were reported in recent researches. The reason for not getting a straight through-pore by the electron drilling was analyzed. A hypothesis, which improving heat conduction property of the membrane would lead to a straight nanopore drilling, was proposed. And the hypothesis was confirmed true.

scholarly journals Visible-Light-Driven Photocatalytic Activity of Magnetic BiOBr/SrFe12O19 Nanosheets

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 735 ◽  
Author(s):  
Taiping Xie ◽  
Jiao Hu ◽  
Jun Yang ◽  
Chenglun Liu ◽  
Longjun Xu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Microscope ◽  
Visible Light ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Active Species ◽  
Composite Catalyst ◽  
Light Emitting ◽  
Transmission Electron ◽  
Visible Light Driven

Magnetic BiOBr/SrFe12O19 nanosheets were successfully synthesized using the hydrothermal method. The as-prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and UV-visible diffused reflectance spectra (UV-DRS), and the magnetic properties were tested using a vibration sample magnetometer (VSM). The as-produced composite with an irregular flaky-shaped aggregate possesses a good anti-demagnetization ability (Hc = 861.04 G) and a high photocatalytic efficiency. Under visible light (λ > 420 nm) and UV light-emitting diode (LED) irradiation, the photodegradation rates of Rhodamine B (RhB) using BiOBr/SrFe12O19 (5 wt %) (BOB/SFO-5) after 30 min of reaction were 97% and 98%, respectively, which were higher than that using BiOBr (87%). The degradation rate of RhB using the recovered BiOBr/5 wt % SrFe12O19 (marked as BOB/SFO-5) was still more than 85% in the fifth cycle, indicating the high stability of the composite catalyst. Meanwhile, after five cycles, the magnetic properties were still as stable as before. The radical-capture experiments proved that superoxide radicals and holes were main active species in the photocatalytic degradation of RhB.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Cross‐section transmission electron microscope observations of diamond‐turned single‐crystal Si surfaces

1994 ◽  
Vol 65 (20) ◽  
pp. 2553-2555 ◽  
Author(s):  
Takayuki Shibata ◽  
Atsushi Ono ◽  
Kenji Kurihara ◽  
Eiji Makino ◽  
Masayuki Ikeda
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Transmission Electron

Microtwin morphology for silicon on sapphire

1987 ◽  
Vol 45 ◽  
pp. 256-257
Author(s):  
M. E. Twigg ◽  
E. D. Richmond
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Sapphire Substrate ◽  
Beam Direction ◽  
Transmission Electron ◽  
Twinning System

It is well established that microtwins play an important role in accommodating stresses that accompany the growth of Si on sapphire (SOS) for the (001)Si/(1012)sapphire hetero-epitaxial system. When examined in cross section along the <110> direction by the transmission electron microscope (TEM), microtwins corresponding to two of the four twinning systems are clearly visible. It is also apparent that one of the two twinning systems dominates. For the [110] beam direction, the (111) twinning system accounts for the majority of visible microtwins, whereas the (111) twinning system accounts for the minority. It is thought that the abundance of (111) twins is due to a coincidence between the (111) planes of the Si matrix and the (1232) planes of the sapphire substrate; there is also a coincidence between the (113) planes of the majority twinning system and the (0112) sapphire planes. There are no such coincidences, however, between the minority twinning system in Si and the sapphire substrate.

scholarly journals Edge-On Ion Irradiation of Electron Microscope Specimens

1992 ◽  
Vol 268 ◽  
Author(s):  
Mauro P. Otero ◽  
Charles W. Allen
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Ion Irradiation ◽  
Special Technique ◽  
Plan View ◽  
Depth Direction ◽  
Transmission Electron ◽  
Foil Specimen

ABSTRACTA special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect to the irradiation. The results of amorphization of Si, irradiated in this orientation by 1 or 1.5 MeV Kr, are presented and briefly compared with the usual plan view observations. The limitations of the technique are discussed and several experiments which might profitably employ this technique are suggested.

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