Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

By using the bosonization approach and the renormalization group (RG) technique, we study the half-filled band one-dimensional t–U–J model with additional on-bond repulsion (W>0) in the weak-coupling regime. The presence of on-bond repulsion is responsible for realization of a metallic phase in the system, and the phase diagram is strongly controlled by the symmetry of the model. By analyzing the RG flow diagram and comparing order parameters, the phase boundaries are determined and the structure of the phase diagram is clarified. In the case of SU (2) ⊗ SU (2) symmetry, the phase diagram consists of a metallic phase characterized by a Luttinger liquid (LL) and two insulting phases characterized by the degenerate spin-density-wave (SDW) and the bond-charge-density-wave (BCDW). In the SU (2) ⊗ U(1)-symmetric case, the phase diagram contains two metallic phases: a LL and a Luther–Emery phase, and three insulating phases: the transverse SDW ( SDW ±), the longitudinal SDW ( SDW z) and the dimerized BCDW. The insulating charge-density-wave and bond-spin-density-wave (BSDW) phases are always suppressed in the ground state. In addition, the system show a long-ranged order in the BCDW and SDW z phases.

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Design of Metallic Phase Diagram Determinator Based on Electromagnetic Heating Technology

Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering ◽

10.2991/icmmse-16.2016.21 ◽

2016 ◽

Author(s):

Yun Ren ◽

Peng-tao Xie

Keyword(s):

Phase Diagram ◽

Metallic Phase ◽

Electromagnetic Heating ◽

Heating Technology

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Hydrogen dynamics and metallic phase stabilization in VO2

Applied Physics Letters ◽

10.1063/1.4868541 ◽

2014 ◽

Vol 104 (10) ◽

pp. 101913 ◽

Cited By ~ 26

Author(s):

Keith H. Warnick ◽

Bin Wang ◽

Sokrates T. Pantelides

Keyword(s):

Metallic Phase ◽

Phase Stabilization

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Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

Journal of Thermal Analysis and Calorimetry ◽

10.1007/s10973-021-11050-4 ◽

2021 ◽

Author(s):

Detlef Klimm ◽

Bartosz Szczefanowicz ◽

Nora Wolff ◽

Matthias Bickermann

Keyword(s):

Thermal Analysis ◽

Phase Diagram ◽

Differential Thermal Analysis ◽

Melting Point ◽

Concentration Field ◽

Experimental Results ◽

Melting Points ◽

Co Doping ◽

Phase Stabilization ◽

Co Doped

AbstractBy differential thermal analysis, a concentration field suitable for the growth of Zr, Mg co-doped strontium hexagallate crystals was observed that corresponds well with known experimental results. It was shown that the melting point of doped crystal is ca. 60 K higher than that of undoped crystals. This higher melting points indicate hexagallate phase stabilization by Zr, Mg co-doping and increase the growth window of (Mg,Zr):SrGa12O19, compared to undoped SrGa12O19 that grows from SrO–Ga2O3 melts.

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Phasendiagramm des V1-xFexO2-xFx-Systems für o < x ≦ 0,04 / Study of Phase-Diagram in V1-xFexO2-xFx with ο < x ≦ 0.04

Zeitschrift für Naturforschung B ◽

10.1515/znb-1977-1006 ◽

1977 ◽

Vol 32 (10) ◽

pp. 1125-1132 ◽

Cited By ~ 3

Author(s):

Jürgen Pebler ◽

Klaus Schmidt

Keyword(s):

Phase Diagram ◽

Rutile Phase ◽

Metallic Phase ◽

X Ray Diffraction ◽

Electric Field Gradients ◽

Metal Insulator ◽

X Ray ◽

Field Gradients ◽

Mössbauer Measurements ◽

Intermediate Phases

V1-xFexO2-xFx samples (0 ≤ x ≦ 0.20) have been prepared by solid state reaction in sealed platinum tubes. The temperature-composition phase diagram with 0 < x ≦ 0.04 is found to contain four phases which were determined by X-ray diffraction and 57Fe-Mössbauer measurements. At small (Fe3+, F-) concentrations (x < 0.005) only one Fe-site is seen in the low-temperature M1 phase and one transition from the insulator to metallic phase. For 0.005 ≦ x ≦ 0.008 at temperatures just below the metal-insulator transition a second monoclinic phase M2 is stable in which two Fe-sites are resolved by their electric field gradients and their isomer shifts. These two sites are identified as the Fe atoms on the paired V-V chains and the equispaced V-V chains in the C2/m structure of MAREZIO et al. At higher Fe3+, F- concentrations (x > 0.008) the existence of the intermediate phases M2 and M3, between M1 and the rutile phase, has been confirmed.

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PHASE DIAGRAM FOR A LUTTINGER LIQUID COUPLED TO PHONONS IN ONE DIMENSION

International Journal of Modern Physics B ◽

10.1142/s0217979295000185 ◽

1995 ◽

Vol 09 (04n05) ◽

pp. 495-533 ◽

Cited By ~ 16

Author(s):

THIERRY MARTIN ◽

DANIEL LOSS

Keyword(s):

Phase Diagram ◽

Filling Factor ◽

Density Wave ◽

Luttinger Liquid ◽

Metallic Phase ◽

Dimensional System ◽

Phonon Coupling ◽

Small Momentum Transfer ◽

Electron Phonon Coupling ◽

Interacting Electrons

We consider a one-dimensional system consisting of electrons with short-ranged repulsive interactions and coupled to small-momentum transfer acoustic phonons. The interacting electrons are bosonized and described in terms of a Luttinger liquid which allows us to calculate exactly the one- and two-electron Green function. For non-interacting electrons, the coupling to phonons alone induces a singularity at the Fermi surface which is analogous to that encountered for electrons with an instantaneous attractive interaction. The exponents which determine the presence of singlet/triplet superconducting pairing fluctuations, and spin/charge density wave fluctuations are strongly affected by the presence of the Wentzel-Bardeen singularity, resulting in the favoring of superconducting fluctuations. For the Hubbard model the equivalent of a phase diagram is established, as a function of: the electron-phonon coupling, the electron filling factor, and the on-site repulsion between electrons. The Wentzel-Bardeen singularity can be reached for arbitrary values of the electron-phonon coupling constant by varying the filling factor. This provides an effective mechanism to push the system from the antiferromagnetic into the metallic phase, and finally into the superconducting phase as the electron filling factor is increased towards half-filling.

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Dynamic studies of silicide-mediated crystallization of amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131395 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1352-1353

Author(s):

C. Hayzelden ◽

J. L. Batstone

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Metallic Phase ◽

Single Crystal Substrate ◽

Free Electrons ◽

Melt Temperature ◽

Transmission Electron ◽

Crystal Substrate ◽

High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

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