scholarly journals Method of axial adjustment for precessional transmissions

2018 ◽  
Vol 178 ◽  
pp. 06024
Author(s):  
Ion Bostan ◽  
Sergiu Mazuru ◽  
Maxim Casian
Keyword(s):  
Front Surface ◽  
Front Side ◽  
Error Calculation ◽  
Adjustment Method ◽  
Compensation Error ◽  
Base Ring ◽  
Group Interchangeability ◽  
Lower Group

Axial adjustment method for precessional transmissions includes compensation error calculation, determination compensator groups, achieved in the form of base and auxiliary rings. The compensator has on the base ring axial canals in which can be placed clamping bolts but the auxiliary ring has axial holes for the screws. The auxiliary ring is formed from increasing sectors - the distance between auxiliary ring stairs and front side of body, from decreasing sectors - the distance between base ring and bottom place, and the closure element - the clearance between gear body and the front surface of the base ring. According to the method of group interchangeability is determined the deviation value of the upper and lower group tolerance and the clearance between lid and body. Then rotating one of the rings is ensured the dimension of the compensator which must match to compensation clearance value and then the compensator is adjusted to required value.

scholarly journals Low Recombination Firing-Through Al Paste for N-Type Solar Cell with Boron Emitter

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 765
Author(s):  
Peng Zhu ◽  
Yuan Liu ◽  
Chengjiang Cao ◽  
Juan Tian ◽  
Aichuang Zhang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
Front Surface ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Contact Resistivity ◽  
Silicon Sample ◽  
Front Side ◽  
Cell Front

A kind of low recombination firing-through screen-printing aluminum (Al) paste is proposed in this work to be used for a boron-diffused N-type solar cell front side metallization. A front side fire-through contact (FTC) approach has been carried out for the formation of local contacts for a front surface passivated solar cell. With a low contact resistivity (ρc) of 1.0 mΩ·cm2, good ohmic contact between the boron-doped front surface of the silicon sample and the Al paste was realized. To obtain a good energy conversion efficiency, a balance can be achieved between the open circuit voltage (Voc) and contact resistivity (ρc) of the cell by combining suitable Al powders and appropriate additives. The detailed micro-contact difference in Si/metallization between the firing-through Al paste and silver-aluminum (Ag-Al) paste was analyzed. The dark saturation current density beneath the metal contact (J0, metal) of the Si/metallization region using our firing-through Al paste was discussed, which was proven to be 61% lower than using Ag-Al paste. The pseudo energy conversion efficiency of the cell using Al paste measured by Suns-VOC was also higher than using Ag-Al paste. The role of Al paste in low surface metal recombination is discussed. The utilization of this new kind of Al paste was much cheaper and more convenient, compared to the traditional process using Ag or Ag-Al paste.

Main Provisions Of The Concept Of Technology Of Diamond Cutting And Drilling Of Building Structures

2019 ◽  
pp. 59-63
Keyword(s):  
Combustion Engine ◽  
Front Surface ◽  
The Body ◽  
Building Structures ◽  
Diamond Cutting ◽  
Variable Diameter ◽  
Diamond Drilling ◽  
Single Structure ◽  
New Construction ◽  
Non Destructive

The main provisions of the concept of technology of diamond cutting and drilling of building structures are considered. The innovativeness of the technology, its main possibilities and advantages are presented. Carrying out works with the help of this technology in underwater conditions expands its use when constructing and reconstructing hydraulic structure. The use of diamond drilling equipment with motors equipped with an internal combustion engine is considered. Drilling holes with a variable diameter during the reconstruction of the runways of airfields makes it possible to combine the landing mats into a single structure. The ability to cut inside the concrete mass, parallel to the front surface, has no analogues among the methods of concrete treatment. The use of this technology for producing blind openings in the body of concrete without weakening the structure is also unique. Work with precision quality in cutting and diamond drilling of concrete and reinforced concrete was noted by architects and began to be implemented in the manufacture of inter-room and inter-floor openings. Non-destructive approach to the fragmentation of building structures allows them to be reused. The technology of diamond cutting and drilling is located at the junction of new construction, repair, reconstruction of buildings and structures, and dismantling of structures. Attention is paid to the complexity and combinatorial application of diamond technology. Economic efficiency and ecological safety of diamond technology are presented. The main directions of further research for the development of technology are indicated.

The Simulation about Adjustment Method of Shock Level of Nano Satellites

2015 ◽  
Vol 63 (3) ◽  
pp. 117-119
Author(s):  
Toru HATAMURA ◽  
Hirokazu MASUI ◽  
Mengu CHO ◽  
Kazuo MAENO
Keyword(s):  
Shock Level ◽  
Adjustment Method

A Novel Approach to Front-Side Deprocessing for Thinned Die after Backside Failure Isolation

2003 ◽  
Author(s):  
Dat Nguyen ◽  
Cuong Phan ◽  
Jeff Conner ◽  
Martin Smith ◽  
John Drummond
Keyword(s):  
Front Side ◽  
Ball Grid Arrays ◽  
Safe Handling ◽  
Flip Chips ◽  
Novel Approach ◽  
Diamond Saw ◽  
Reconstructed Sample

Abstract This paper describes a novel approach for safe handling of the thinned die from the front; a technique that can also be successfully applied to preserve cracked die. The discussion provides details on the characteristics and processes involved in backside reconstruction, thinned die reconstruction, and front-side deprocessing of thinned die. The finished backside reconstruction sample was cross-sectioned for examination using a diamond saw. After 6 hours of bake, no cracking of the thinned die was observed. Front-side deprocessing was then applied to the backside reconstructed sample. The sample remains intact. The technique has proven to be easily applied and highly reliable, and provides a solution for front-side deprocessing for both high pin count ball grid arrays and flip chips.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Backside Mechanical Preparation Methodology for Effective Failure Analysis on Small and Non-Exposed Die Paddle Package

2018 ◽  
Author(s):  
Ong Pei Hoon ◽  
Ng Kiong Kay ◽  
Gwee Hoon Yen
Keyword(s):  
Failure Analysis ◽  
Chemical Etching ◽  
Chemical Resistance ◽  
Etching Time ◽  
Lead Frame ◽  
Front Side ◽  
Electrical Measurements ◽  
Mechanical Preparation ◽  
Die Surface ◽  
Copper Lead

Abstract Chemical etching is commonly used in exposing the die surface from die front-side and die backside because of its quick etching time, burr-free and stress-free. However, this technique is risky when performing copper lead frame etching during backside preparation on small and non-exposed die paddle package. The drawback of this technique is that the copper leads will be over etched by 65% Acid Nitric Fuming even though the device’s leads are protected by chemical resistance tape. Consequently, the device is not able to proceed to any other further electrical measurements. Therefore, we introduced mechanical preparation as an alternative solution to replace the existing procedure. With the new method, we are able to ensure the copper leads are intact for the electrical measurements to improve the effectiveness and accuracy of physical failure analysis.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

1997 ◽  
Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel
Keyword(s):  
Thermal Emission ◽  
Test Cases ◽  
Memory Devices ◽  
Front Side ◽  
Emission Analysis ◽  
Intensity Attenuation ◽  
Analysis Techniques ◽  
Defect Sites ◽  
Emission Microscopy ◽  
Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

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