Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon

1993 ◽  
Vol 63 (14) ◽  
pp. 1933-1935 ◽  
Author(s):  
S. Pramanick ◽  
Yu. N. Erokhin ◽  
B. K. Patnaik ◽  
G. A. Rozgonyi
Keyword(s):  
Polycrystalline Silicon ◽  
Cobalt Silicide ◽  
Morphological Instability ◽  
Phosphorus Doped

Contrast enhancement pattern transfer etching of phosphorus‐doped polycrystalline silicon

1987 ◽  
Vol 51 (17) ◽  
pp. 1328-1330 ◽  
Author(s):  
N. Hayasaka ◽  
H. Nakahara ◽  
H. Okano ◽  
Y. Horiike
Keyword(s):  
Contrast Enhancement ◽  
Polycrystalline Silicon ◽  
Pattern Transfer ◽  
Enhancement Pattern ◽  
Phosphorus Doped

Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

2013 ◽  
Vol 102 (21) ◽  
pp. 212102 ◽  
Author(s):  
T. Antesberger ◽  
T. A. Wassner ◽  
C. Jaeger ◽  
M. Algasinger ◽  
M. Kashani ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

2001 ◽  
Vol 670 ◽  
Author(s):  
Hidekazu Sato ◽  
Takae Sukegawa ◽  
Toshifumi Mori ◽  
Kousuke Suzuki ◽  
Haruhisa Mori
Keyword(s):  
Sheet Resistance ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Cobalt Silicide ◽  
Fabrication Technology ◽  
Process Technology ◽  
Cobalt Disilicide ◽  
Gate Structure ◽  
Electrode Fabrication ◽  
The Relationship

ABSTRACTThis paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

Optical properties of phosphorus‐doped polycrystalline silicon layers

1981 ◽  
Vol 52 (11) ◽  
pp. 6870-6878 ◽  
Author(s):  
G. Lubberts ◽  
B. C. Burkey ◽  
F. Moser ◽  
E. A. Trabka
Keyword(s):  
Optical Properties ◽  
Polycrystalline Silicon ◽  
Phosphorus Doped

Resistivity of phosphorus-doped sputter-deposited polycrystalline silicon films

1977 ◽  
Vol 20 (11) ◽  
pp. 925-930 ◽  
Author(s):  
Edgardo Gabilli ◽  
Sergio Guerri ◽  
Guido Masetti ◽  
Maurizio Severi
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Sputter Deposited ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon

1992 ◽  
Vol 276 ◽  
Author(s):  
P. Krulevitch ◽  
G. C. Johnson ◽  
R. T. Howe
Keyword(s):  
Film Thickness ◽  
Polycrystalline Silicon ◽  
Stress Gradient ◽  
Stress Relief ◽  
Phosphorus Doping ◽  
Cross Sectional ◽  
Uniform Microstructure ◽  
Phosphosilicate Glass ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

ABSTRACTThe research presented here is an investigation of the effects of phosphorus doping on residual stresses and microstructure in polycrystalline silicon. Undoped polycrystalline silicon films were deposited on phosphosilicate glass layers and annealed at 1050 °C for 5 to 60 minutes. The stress gradient through the film thickness was measured from wafer curvature, and microstructure was examined with cross-sectional TEM. A 20 minute anneal is sufficient for stress relief in initially tensile films and produces a uniform microstructure consisting of 0.1-0.2 µm equi-axed grains.

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