InGaAs/GaAs multiple strained‐layer structure grown on a lattice‐matched InGaAs substrate wafer

1995 ◽  
Vol 66 (15) ◽  
pp. 1957-1959 ◽  
Author(s):  
I. J. Fritz ◽  
J. F. Klem ◽  
J. E. Schirber ◽  
J. A. Olsen ◽  
W. A. Bonner
Keyword(s):  
Layer Structure ◽  
Strained Layer ◽  
Substrate Wafer ◽  
Lattice Matched

The role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

1987 ◽  
Vol 2 (4) ◽  
pp. 446-455 ◽  
Author(s):  
Sung I. Park ◽  
A. Marshall ◽  
R. H. Hammond ◽  
T. H. Geballe ◽  
J. Talvacchio
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Surface Damage ◽  
Metal Films ◽  
Strained Layer ◽  
Transmission Electron ◽  
Lattice Matched

Low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (< 100 Å) refractory superconducting (Nb, V) films. Using this technique Nb films as thin as 7 Å have been grown, from which good tunnel junctions have been fabricated. Both the native films and the tunnel junctions are sturdy and can be thermally recycled without any degradation. In-situ surface study along with transmission electron microscopy (TEM) results suggest the removal of the carbon atoms from the surface of the substrate without an apparent surface damage as the causes of the improvement. The TEM results indicate that the Nb films grow perfectly lattice matched to the sapphire substrate when the substrate is ion-beam cleaned. This strained-layer epitaxy is observed up to 40 Å, the maximum thickness investigated through TEM.

Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
Y. C. Kao ◽  
T. P. E. Broekaert ◽  
H. Y. Liu ◽  
S. Tang ◽  
I. H. Ho ◽  
...  
Keyword(s):  
Layer Structure ◽  
Plasma Source ◽  
Solubility Limit ◽  
Epitaxial Films ◽  
Group V ◽  
Mbe Growth ◽  
Growth Technique ◽  
Ecr Plasma ◽  
Nitrogen Incorporation ◽  
Lattice Matched

AbstractIn this paper, we report the MBE growth of high nitrogen content lattice-matched InAs1−xNx (x=0.38) single crystal epitaxial films on GaAs. The nitrogen incorporation is about an order higher than previously reported on other mixed group V nitride alloys. These data are consistent with a nitrogen solubility limit calculation in various III-V binary alloys, which predicts orders of magnitude higher nitrogen incorporation in InAs than any other alloys. InAsN growths were obtained using a modified ECR-MBE system with atomic-nitrogen generated by an ECR plasma source. Improved crystal quality was obtained using a “template” growth technique. An x-ray linewidth of 270 arc-s was achieved on a 0.4 μm thick InAs0.62N0.38/GaAs multi-layer structure. Hall effect data show these InAsN films are semi-metallic.

Generation and detection of nano ultrasound waves with a multiple strained layer structure

2008 ◽  
Vol 40 (8) ◽  
pp. 577-586 ◽  
Author(s):  
Bahareh Kaviani ◽  
Ali Sadr ◽  
Adib Abrishamifar
Keyword(s):  
Layer Structure ◽  
Strained Layer ◽  
Ultrasound Waves

An Evaluation of Implantation-Disordering of (Inga)As/Gaas Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
D. R. Myers ◽  
C. E. Barnes ◽  
G. W. Arnold ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Transport Properties ◽  
Lattice Mismatch ◽  
Electrical Activation ◽  
Chemical System ◽  
Virgin Material ◽  
Bulk Gaas ◽  
Strained Layer ◽  
Electroluminescence Intensity ◽  
Strained Layer Superlattices ◽  
Lattice Matched

AbstractWe have examined the optical and transport properties of In.2Ga.8As/GaAs straled-kayer superlZotices (SLS's), which have been implanted either with 5 × 1015/cm2, 250keV Zn+ or with 5 × 1014/cm2, 70keV Be+ and annealed under an arsenic overpressure at 600 °C. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS's produced electroluminescence intensity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful in strained-layer superlattices as in lattice-matched systems.

scholarly journals Band Offsets at Strained-Layer Interfaces

1987 ◽  
Vol 102 ◽  
Author(s):  
Chris G. Van De Walle
Keyword(s):  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Electronic Band ◽  
Band Offsets ◽  
Strained Layer ◽  
Device Applications ◽  
Absolute Energy ◽  
Local Density Functional ◽  
Lattice Matched

ABSTRACTStrained-layer heterojunctions and superlattices have recently shown tremendous potential for device applications because of their flexibility for tailoring the electronic band structure. We present a theoretical model to predict the band offsets at both lattice-matched and pseudomorphic strained-layer interfaces. The theory is based on the local-density- functional pseudopotential formalism, and the “model solid approach” of Van de Walle and Martin. The results can be most simply expressed in terms of an “absolute” energy level for each semiconductor, and deformation potentials that describe the effects of strain on the electronic bands. The model predicts reliable values for the experimentally observed lineups in Si/Ge, GaAs/InAs, and ZnSe/ZnS systems, and can be used to ex-plore which combinations of materials and configurations of the strains will lead to the desired electronic properties.

X-ray topography and EBIC studies of misfit dislocations in strained layer structures

1987 ◽  
Vol 102 ◽  
Author(s):  
N. Hamaguchi ◽  
T. P. Humphreys ◽  
C. A. Parker ◽  
S. M. Bedair ◽  
B-L. Jiang ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Misfit Dislocations ◽  
X Ray ◽  
Strained Layer ◽  
Layer Structures ◽  
Lattice Matched

ABSTRACTX-ray topography(XRT) and EBIC have been used to study the generation of misfit dislocations in strained layer structures. Two structures studied were GaAs1−yPy(y=0.15) film and SLS consisting of InxGa1−xAs(x=0.08) and GaAs1−y Py(y=0.16) layers. XRT and EBIC techniques gave consistent results for the behavior of dislocations. The value of the critical thickness for generation of misfit dislocations in the former was found to be few times larger than that in the latter. EBIC image showed that a SLS lattice matched to the substrate is effective in reducing defects originating from the substrate.

Structural Studies of an InAs-GaAs Superlattice Alloy

1985 ◽  
Vol 47 ◽  
Author(s):  
M. C. Tamargo ◽  
R. Hull ◽  
L. H. Greene ◽  
J. R. Hayes ◽  
N. Tabatabaie ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Layer Structure ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Strained Layer Superlattices ◽  
Lattice Matched

ABSTRACTThin alternating layers of InAs and GaAs have been grown by MBE on buffer layers lattice matched to InP. The layer structure was evaluated by transmission electron microscopy (TEM) and low angle X-ray scattering. Commensurate epitaxial layers approximately 15Å thick were obtained in spite of the large lattice mismatch (7%). These results and their implication for growth conditions of strained-layer superlattices will be discussed.

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