Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 ◽  
Vol 95 (3) ◽  
pp. 1134-1140 ◽  
Author(s):  
Michael Y. L. Jung ◽  
Rudiyanto Gunawan ◽  
Richard D. Braatz ◽  
E. G. Seebauer
2013 ◽  
Vol 114 (15) ◽  
pp. 153501 ◽  
Author(s):  
Malleswararao Tangi ◽  
Jithesh Kuyyalil ◽  
S. M. Shivaprasad

Author(s):  
П.А. Дементьев ◽  
Е.В. Дементьева ◽  
Т.В. Львова ◽  
В.Л. Берковиц ◽  
М.В. Лебедев

The effect of chemical passivation in solutions of ammonium sulfide (NH4)2S on the optical and electronic properties of the n-InP (001) surface has been studied. It has been shown that treatment in a 4% aqueous solution of (NH4)2S leads to a decrease of surface band bending and localized charges in near-surface region in the 2 times. Processing in a 4% alcoholic solution of (NH4)2S leads to a decrease in these parameters in 3 times, and moreover, the barrier photovoltage and also reduces in three times.


ChemPhysChem ◽  
2021 ◽  
Author(s):  
Alexandra R. McNeill ◽  
Rodrigo Martinez-Gazoni ◽  
Roger J. Reeves ◽  
Martin W. Allen ◽  
Alison Downard

1999 ◽  
Vol 573 ◽  
Author(s):  
R. F. Elbahnasawy ◽  
J. G. Mclnerney ◽  
P. Ryan ◽  
G. Hughes ◽  
M. Murtagh

ABSTRACTElectrochemical sulfidation of n-type GaAs (100) has been investigated under anodic conditions with a view to surface passivation for improved electronic and optical properties. This treatment has successfully removed the native oxide and formed a thick layer of gallium and arsenic sulfides displaying high durability against oxidation and optical degradation compared to conventional dipping treatment using (NH4)2S solution. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM) have been used to characterize the treated surfaces. These studies have been used to devise a structural model of the near-surface region. The results of Raman backscattering spectroscopy measurements indicate that there is a 35% reduction of the surface barrier height compared to the untreated surface. This passivation technique has been shown to be effective in reducing surface band bending on GaAs (100) and enhancing the chemical stability of the surface, making it more suitable for electronic and optoelectronic device applications.


Author(s):  
A. T. Fisher ◽  
P. Angelini

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.


2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  

1998 ◽  
Vol 319 (1-2) ◽  
pp. 39-43 ◽  
Author(s):  
Z Swiatek ◽  
J.T Bonarski ◽  
R Ciach ◽  
Z.T Kuznicki ◽  
I.M Fodchuk ◽  
...  

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong

Nanoscale ◽  
2021 ◽  
Author(s):  
Pip C. J. Clark ◽  
Nathan K Lewis ◽  
Chun-Ren Ke ◽  
Rubén Ahumada-Lazo ◽  
Qian Chen ◽  
...  

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....


2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.


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