scholarly journals Оптические и электронные свойства пассивированных поверхностей InP(001)

2021 ◽  
Vol 55 (8) ◽  
pp. 644
Author(s):  
П.А. Дементьев ◽  
Е.В. Дементьева ◽  
Т.В. Львова ◽  
В.Л. Берковиц ◽  
М.В. Лебедев
Keyword(s):  
Aqueous Solution ◽  
Electronic Properties ◽  
Surface Region ◽  
Alcoholic Solution ◽  
Surface Band ◽  
Band Bending ◽  
Near Surface ◽  
Ammonium Sulfide ◽  
Optical And Electronic Properties ◽  
Chemical Passivation

The effect of chemical passivation in solutions of ammonium sulfide (NH4)2S on the optical and electronic properties of the n-InP (001) surface has been studied. It has been shown that treatment in a 4% aqueous solution of (NH4)2S leads to a decrease of surface band bending and localized charges in near-surface region in the 2 times. Processing in a 4% alcoholic solution of (NH4)2S leads to a decrease in these parameters in 3 times, and moreover, the barrier photovoltage and also reduces in three times.

Anodic sulfidation and model characterisation of GaAs (100) in (NH4)2 Sx solution

1999 ◽  
Vol 573 ◽  
Author(s):  
R. F. Elbahnasawy ◽  
J. G. Mclnerney ◽  
P. Ryan ◽  
G. Hughes ◽  
M. Murtagh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Structural Model ◽  
Thick Layer ◽  
Surface Region ◽  
Optoelectronic Device ◽  
Native Oxide ◽  
Surface Barrier ◽  
Surface Band ◽  
Band Bending ◽  
Near Surface

ABSTRACTElectrochemical sulfidation of n-type GaAs (100) has been investigated under anodic conditions with a view to surface passivation for improved electronic and optical properties. This treatment has successfully removed the native oxide and formed a thick layer of gallium and arsenic sulfides displaying high durability against oxidation and optical degradation compared to conventional dipping treatment using (NH4)2S solution. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM) have been used to characterize the treated surfaces. These studies have been used to devise a structural model of the near-surface region. The results of Raman backscattering spectroscopy measurements indicate that there is a 35% reduction of the surface barrier height compared to the untreated surface. This passivation technique has been shown to be effective in reducing surface band bending on GaAs (100) and enhancing the chemical stability of the surface, making it more suitable for electronic and optoelectronic device applications.

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 ◽  
Vol 95 (3) ◽  
pp. 1134-1140 ◽  
Author(s):  
Michael Y. L. Jung ◽  
Rudiyanto Gunawan ◽  
Richard D. Braatz ◽  
E. G. Seebauer
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Near Surface ◽  
Dopant Profiles ◽  
Ion Implanted

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

2013 ◽  
Vol 114 (15) ◽  
pp. 153501 ◽  
Author(s):  
Malleswararao Tangi ◽  
Jithesh Kuyyalil ◽  
S. M. Shivaprasad
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Bandgap ◽  
Surface Band ◽  
Band Bending ◽  
Near Surface

Surface Electronic Structure of Nitric-oxide-treated Indium Tin Oxide

2003 ◽  
Vol 796 ◽  
Author(s):  
Hu Jianqiao ◽  
Pan Jisheng ◽  
Furong Zhu ◽  
Gong Hao
Keyword(s):  
Nitric Oxide ◽  
Binding Energy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Surface Region ◽  
Valence Band Maximum ◽  
Surface Band ◽  
Band Bending ◽  
Surface Electronic Structure

ABSTRACTThe surface electronic properties of the nitric oxide (NO) treated indium tin oxide (ITO) are examined in-situ by a four-point probe and X-ray photoelectron spectroscopy (XPS). The XPS N1s peak emerged at a high binding energy of 404 eV indicating that NO is reactive with ITO. NO adsorption induces an increase of film sheet resistance, arising from an oxygen rich layer near the ITO surface region, with approximately 2.5 nm thick. This implies that the interaction of NO with ITO is occurred around surface region. Valence band maximum measured for NO-absorbed ITO was shifted to the low binding energy side. This is related to the upward surface band bending.

scholarly journals Correlative analysis of embedded silicon interfaces passivation by “Kelvin probe force microscopy” and “corona oxide characterization of semiconductor”

2021 ◽  
Author(s):  
Valentin Aubriet ◽  
Kristell Courouble ◽  
Mickael Gros-Jean ◽  
Lukasz Borowik
Keyword(s):  
Field Effect ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Surface Band ◽  
Worst Case ◽  
Band Bending ◽  
Force Microscopy ◽  
Correlative Analysis ◽  
Chemical Passivation

    We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) for the study of embedded silicon-oxide interfaces in the field of chemical and field-effect passivation. Analyzed parameters by these measurements are linked to different factors and specifically to defects density of embedded silicon-dielectric interfaces, surface band bending or the distribution of charges in the nearest surface volume. Furthermore, this COCOS-KPFM correlative analysis turns out to be a useful method to access to chemical and field-effect passivation. We confirm that it is possible to differentiate the influence of local band bending on sample passivation (i.e. field effect passivation) from the effects due to the local recombination rates (i.e. chemical passivation). The measurements were carried on five different passivation layers, precisely, 10.5 nm-thick SiO2, 50 nm-thick SiN, 7nm-thick Al2O3, 7 nm-thick HfO2 and double layer of 7 nm-thick Al2O3 below 53 nm-thick Ta2O5. This correlative analysis indicates that HfO2 present to be the best chemical passivation and SiN is the worst case in term of field effect passivation for p-type silicon. Additionally, we confirm that Ta2O5 layer on top of Al2O3 increase the defects density.

Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2surface and near-surface region

2006 ◽  
Vol 203 (9) ◽  
pp. 2241-2246 ◽  
Author(s):  
Weronika Izydorczyk ◽  
Boguslawa Adamowicz ◽  
Marcin Miczek ◽  
Krzysztof Waczynski
Keyword(s):  
Electronic Properties ◽  
Computer Analysis ◽  
Oxygen Vacancies ◽  
Surface Region ◽  
Near Surface

Purpose-Built Anisotropic Metal Oxide Nanomaterials

2000 ◽  
Vol 635 ◽  
Author(s):  
Lionel Vayssieres ◽  
Jinghua Guo ◽  
Joseph Nordgren
Keyword(s):  
Aqueous Solution ◽  
Metal Oxide ◽  
Electronic Properties ◽  
Anisotropic Nanoparticles ◽  
Ferric Oxyhydroxide ◽  
Optical And Electronic Properties ◽  
Metal Oxide Nanomaterials ◽  
Self Assembled ◽  
Anisotropic Metal

ABSTRACTLarge arrays of perpendicularly oriented anisotropic nanoparticles of ferric oxyhydroxide (Akaganeite, β-FeOOH) and oxide (Hematite, α-Fe2O3) of typically 3-5 nm in diameter, self-assembled as bundles of about 50 nm in diameter and of up to 1 μm in length have been successfully grown onto polycrystalline substrates without template and/or surfactant by heteronucleation from an aqueous solution of ferric salts and their optical and electronic properties investigated.

Electroreduction of Aryldiazonium Ion at the Polar and Non‐Polar Faces of ZnO: Characterisation of the Grafted Films and Their Influence on Near‐Surface Band Bending

ChemPhysChem ◽  
2021 ◽  
Author(s):  
Alexandra R. McNeill ◽  
Rodrigo Martinez-Gazoni ◽  
Roger J. Reeves ◽  
Martin W. Allen ◽  
Alison Downard
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Near Surface
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