AbstractThis article presents a new tilting atomic force microscope (AFM) with an adjustable probe direction and piezoresistive cantilever operated in tapping-mode. The AFM is based on two rotational axes, which enable the adjustment of the probe direction to cover a complete hemisphere. The whole setup is integrated into a nano measuring machine (NMM-1) and the metrological traceability of the piezoresistive cantilever is warranted by in situ calibration on the NMM-1. To demonstrate the capabilities of the tilting AFM, measurements were conducted on a step height standard.
A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.
We introduce a nanopipette/quartz tuning fork (QTF)–atomic force microscope (AFM) for nanolithography and a nanorod/QTF–AFM for nanoscratching with in situ detection of shear dynamics during performance. Capillary-condensed nanoscale water meniscus-mediated and electric field-assisted small-volume liquid ejection and nanolithography in ambient conditions are performed at a low bias voltage (~10 V) via a nanopipette/QTF–AFM. We produce and analyze Au nanoparticle-aggregated nanowire by using nanomeniscus-based particle stacking via a nanopipette/QTF–AFM. In addition, we perform a nanoscratching technique using in situ detection of the mechanical interactions of shear dynamics via a nanorod/QTF–AFM with force sensor capability and high sensitivity.
ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.
Atomic force microscope with an adjustable probe direction and piezoresistive cantilevers operated in tapping-mode / Im Tapping-Modus betriebenes Rasterkraftmikroskop mit einstellbarer Antastrichtung und piezoresistiven Cantilevern