scholarly journals Plastic deformation of gallium arsenide micropillars under uniaxial compression at room temperature

2007 ◽  
Vol 90 (4) ◽  
pp. 043123 ◽  
Author(s):  
Johann Michler ◽  
Kilian Wasmer ◽  
Stephan Meier ◽  
Fredrik Östlund ◽  
Klaus Leifer
2021 ◽  
Vol 2103 (1) ◽  
pp. 012075
Author(s):  
AA Dmitrievskiy ◽  
DG Zhigacheva ◽  
VM Vasyukov ◽  
PN Ovchinnikov

Abstract In this work, the phase composition (relative fractions of monoclinic m-ZrO2, tetragonal t-ZrO2, and cubic c-ZrO2 phases) and mechanical properties (hardness, fracture toughness, compressive strength) of alumina toughened zirconia (ATZ) ceramics, with an addition of silica were investigated. Calcium oxide was used as a stabilizer for the zirconia tetragonal phase. It was shown that CaO-ATZ+SiO2 ceramics demonstrate increased resistance to low-temperature degradation. The plasticity signs at room temperature were found due to the SiO2 addition to CaO-ATZ ceramics. A yield plateau appears in the uniaxial compression diagram at 5 mol. % SiO2 concentration. It is hypothesized that discovered plasticity is due to the increased t→m transformability.


1988 ◽  
Vol 133 ◽  
Author(s):  
Sung H. Whang ◽  
Yoo-Dong Hahn

ABSTRACTTernary Ti-Al-V (Llo) alloys containing vanadium up to 10 at.% and aluminum in the range of 50–55 at.% were prepared. Miniature specimens machined from these alloys were deformed in uniaxial compression at room temperature.The yield stress, and fracture stress and strain were determined with respect to vanadium and aluminum concentration. The deformed alloys were electropolished into thin foils and studied by TEM. In particular, the types of dislocations, stacking faults and twins in the Ti-Al-V alloys were investigated by TEM.


Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


2021 ◽  
Vol 807 ◽  
pp. 140821
Author(s):  
Kai Zhang ◽  
Zhutao Shao ◽  
Christopher S. Daniel ◽  
Mark Turski ◽  
Catalin Pruncu ◽  
...  

2016 ◽  
Vol 78 (6-9) ◽  
Author(s):  
Intan Fadhlina Mohamed ◽  
Seungwon Lee ◽  
Kaveh Edalati ◽  
Zenji Horita ◽  
Shahrum Abdullah ◽  
...  

This work presents a study related to the grain refinement of an aluminum A2618 alloy achieved by High-Pressure Torsion (HPT) known as a process of Severe Plastic Deformation (SPD). The HPT is conducted on disks of the alloy under an applied pressure of 6 GPa for 1 and 5 turns with a rotation speed of 1 rpm at room temperature. The HPT processing leads to microstructural refinement with an average grain size of ~250 nm at a saturation level after 5 turns. Gradual increases in hardness are observed from the beginning of straining up to a saturation level. This study thus suggests that hardening due to grain refinement is attained by the HPT processing of the A2618 alloy at room temperature.


2011 ◽  
Vol 95 (6) ◽  
pp. 63003 ◽  
Author(s):  
J. Wang ◽  
C. Lu ◽  
Q. Wang ◽  
P. Xiao ◽  
F. J. Ke ◽  
...  

2018 ◽  
Vol 141 (3) ◽  
Author(s):  
Mahsa Ebrahimi ◽  
Abbas Zarei-Hanzaki ◽  
A. H. Shafieizad ◽  
Michaela Šlapáková ◽  
Parya Teymoory

The present work was primarily conducted to study the wear behavior of as-received and severely deformed Al-15%Mg2Si in situ composites. The severe plastic deformation was applied using accumulative back extrusion (ABE) technique (one and three passes). The continuous dynamic recrystallization (CDRX) was recognized as the main strain accommodation and grain refinement mechanism within aluminum matrix during ABE cycles. To investigate the wear properties of the processed material, the dry sliding wear tests were carried out on both the as-received and processed samples under normal load of 10 and 20 N at room temperature, 100 °C, and 200 °C. The results indicated a better wear resistance of processed specimens in comparison to the as-received ones at room temperature. In addition, the wear performance was improved as the ABE pass numbers increased. These were related to the presence of oxide tribolayer. At 100 °C, the as-received material exhibited a better wear performance compared to the processed material; this was attributed to the formation of a work-hardened layer on the worn surface. At 200 °C, both the as-received and processed composites experienced a severe wear condition. In general, elevating the temperature changed the dominant wear mechanism from oxidation and delamination at room temperature to severe adhesion and plastic deformation at 200 °C.


2018 ◽  
Vol 4 (2) ◽  
Author(s):  
Chu Rainer Kwang-Hua

We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.


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