Dielectric Properties of Highly Oriented Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

1999 ◽  
Vol 604 ◽  
Author(s):  
S. Kalpat ◽  
X. Du ◽  
I.R. Abothu ◽  
A. Akiba ◽  
H. Goto ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Rf Sputtering ◽  
Hysteresis Loops ◽  
Test System ◽  
Zirconium Titanate ◽  
Lead Zirconium Titanate ◽  
Pzt Thin Films ◽  
Dielectric Constant And Loss ◽  
Oriented Films

AbstractHighly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

STRUCTURAL AND FERROELECTRIC CHARACTERIZATION OF PZT THIN FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4460-4464 ◽  
Author(s):  
YING YANG ◽  
ZHIMING CHEN ◽  
GAOYANG ZHAO ◽  
WEIHUA ZHANG
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Relative Dielectric Constant ◽  
Dissipation Factor ◽  
Dip Coating ◽  
Test System ◽  
Pzt Thin Films ◽  
Different Temperatures ◽  
Lcr Meter

Pb(Zr x Ti 1-x ) O 3 (PZT) films were prepared on the ITO coated glass plates in sol-gel dip-coating process and post-annealing at different temperatures. The structural properties of the films were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is shown that the PZT ferroelectric thin films with (110) preferential orientation and well-crystallized perovskite structure can be obtained after annealing at 680°C for 30 minutes. The P-E hysteresis loops were measured by the Sawyer-Tower test system with a compensation resistor at room temperature. Values of the remanent polarization (Pr) and the coercive electric field (Ec) are 19.36• C/cm 2 and 95 kV/cm, respectively, for the prepared PZT thin films. The relative dielectric constant εr and the dissipation factor tg• of the PZT thin films are equal to 639 and 0.23, respectively, which were measured in a LCR meter.

Effect of Crystal Orientation on Dielectric Properties of Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 713-717 ◽  
Author(s):  
Sriram Kalpat ◽  
X. Du ◽  
Issac R. Abothu ◽  
Akira Akiba ◽  
Hiroshi Goto ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Crystal Orientation ◽  
Rf Sputtering ◽  
Zirconium Titanate ◽  
Lead Zirconium Titanate

Photoferroelectric Effects of Undoped and Extrinsic Ion-Doped PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Li Li ◽  
Chhiu-Tsu Lin ◽  
Martin S. Leung ◽  
Paul M. Adams ◽  
Russell A. Lipeles
Keyword(s):  
Thin Films ◽  
Optical Memory ◽  
Hysteresis Loops ◽  
Band Gap Energy ◽  
Acetate Solution ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
Photocurrent Spectroscopy ◽  
Visible Wavelengths ◽  
Mn Doped

ABSTRACTDeposition by aqueous acetate solution (DAAS) technique was used to synthesize undoped and 5 wt% Cr-, Mn-, Eu-, or Pr-doped Pb(Zr0.53Ti0.47O3 [PZT] thin films. The dopant was incorporated into PZT either in the precursor coating solution or via thermal diffusion into undoped PZT. X-ray diffraction shows that ion-doped PZT thin films on Pt<l 1 l>/Ti/SiO2/Si<100> (in particular, the Mn- and Eu- doped samples) display better crystallinity and smaller lattice parameters than those on sapphire substrates. The enhancement of photoconductivity at visible wavelengths measured by excitation photocurrent spectroscopy (EPS) goes as Cr-doped∼Mn-doped > Eu-doped ∼ Pr-doped. Only Mn-doped PZT perovskites have the band gap energy red-shifted to 360 nm from 330 nm. The space charge (or photovoltaic) field was estimated to be < 8 v when about 100 v was applied to ion-doped PZT thin films with 260 or 320 nm light. By using laser irradiation at selected wavelengths and switching the polarity of applied bias voltage, the expected changes in resistance (Ry) and remanent polarization (±Pr) states were observed in the P-E hysteresis loops. The possible applications of extrinsic ion-doped PZT thin films in optical memory devices are discussed.

Determination of dielectric constant and loss of high-K thin films in the microwave frequencies

Measurement ◽  
2010 ◽  
Vol 43 (4) ◽  
pp. 556-562 ◽  
Author(s):  
K. Sudheendran ◽  
D. Pamu ◽  
M. Ghanashyam Krishna ◽  
K.C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Microwave Frequencies ◽  
Dielectric Constant And Loss ◽  
High K

Dielectric Property of PZT Thin Films Doped with PMnN

2012 ◽  
Vol 569 ◽  
pp. 35-38
Author(s):  
Tao Zhang ◽  
Min Li ◽  
Ting Liu ◽  
Bin Sun ◽  
Sheng Nan Zhou
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Property ◽  
Quality Factor ◽  
Mechanical Quality Factor ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Testing Frequency ◽  
Mechanical Quality ◽  
Doping Ratio

The high piezoelectricity and high mechanical quality factor thin films are very important for the fabrications of micro devices. The Pb(Zrx,Ti1-x)O3(PZT) thin films own high piezoelectricity, however, its mechanical quality factor is small. The proper doping of Pb(Mn1/3,Nb2/3)O3(PMnN) will perfectly improve the mechanical quality of the films. However, the doping of PMnN will change the dielectric property of PZT thin films, and so it’s very necessary to investigate the dielectric property of PZT thin films doped with different ratio of PMnN. In this paper, the Pb(Mn1/3,Nb2/3)O3- PbZrO3-PbTiO3(PMnN-PZT) thin films with different doping ratio of PMnN are deposited by the magnetron sputtering method, and the X-ray diffraction is applied to analyze the structure of thin films, and the relative dielectric constant are characterized by the LCR testing system. The results show that the PMnN-PZT thin films with smaller doping ratio than 20% exhibit polycrstal structure, and the dielectric constant of thin films increase with the doping ratio of PMnN sharply, especially the doped PMnN is smaller than 6 mol percent. All the dielectric constants decrease with the testing frequency, and which have little change if the testing frequency is larger than 2.5kHz.

Effects of adhesion layers on the ferroelectric properties of lead zirconium titanate thin films deposited on silicon nitride coated silicon substrates

2008 ◽  
Vol 516 (18) ◽  
pp. 6052-6057 ◽  
Author(s):  
Omar Zohni ◽  
Gregory Buckner ◽  
Taeyun Kim ◽  
Angus Kingon ◽  
Jeff Maranchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Ferroelectric Properties ◽  
Silicon Substrates ◽  
Zirconium Titanate ◽  
Lead Zirconium Titanate

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

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