Structural and electrical characteristics of InSb thin films grown by rf sputtering

1976 ◽  
Vol 47 (8) ◽  
pp. 3630-3639 ◽  
Author(s):  
J. E. Greene ◽  
C. E. Wickersham
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Electrical Characteristics ◽  
Insb Thin Films

scholarly journals Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature

2015 ◽  
Vol 590 ◽  
pp. 193-199 ◽  
Author(s):  
E. Goldenberg ◽  
T. Bayrak ◽  
C. Ozgit-Akgun ◽  
A. Haider ◽  
S.A. Leghari ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Electrical Characteristics ◽  
Flow Ratio ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Structural, Optical, and Electrical Characteristics of Thermal Treated ZnO Thin Films Deposited by RF Sputtering on Glass Substrates

2021 ◽  
Author(s):  
Najeeb Al-Khalli ◽  
Mohamed F. Aly Aboud ◽  
Abdulaziz A. Bagabas ◽  
Nacer Debbar
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
Glass Substrates

Structural and electrical characteristics of W–N thin films prepared by reactive rf sputtering

2003 ◽  
Vol 21 (3) ◽  
pp. 616-622 ◽  
Author(s):  
Pei-Chuen Jiang ◽  
J. S. Chen ◽  
Y. K. Lin
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Electrical Characteristics

scholarly journals Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering

2021 ◽  
Vol 33 (1) ◽  
pp. 101229
Author(s):  
A. Ismail ◽  
M.J. Abdullah ◽  
M.A. Qaeed ◽  
Mohammed A. Khamis ◽  
Bandar Ali AL-Asbahi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Structural and Electrical Characteristics of the Thermally Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
S. Yeh ◽  
D. J. Cheng ◽  
G. F. Chi ◽  
M. T. Chu
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Main Peak ◽  
Second Phase ◽  
Electrical Characteristics ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Different Temperatures

AbstractPolycrystalline InSb thin films have been prepared by the two-source thermal co-evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown films have been heat treated under N2 atmosphere at different temperatures ranged from 520 to 535 C. Both as-grown films have (220) diffraction as the main peak. The heat treated films which have high mobility values show the (111) preferred orientation. For the heat treated film on oxidized Si substrate, the TEM cross sectional morphologies show the existence of the precipitaion of the second phase and the interface diffusion of InSb into the SiOx layer.

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films
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