Erratum: “Effects of Li doping on the performance and environmental stability of solution processed ZnO thin film transistors” [Appl. Phys. Lett. 95, 193503 (2009]

2010 ◽  
Vol 96 (6) ◽  
pp. 069901
Author(s):  
Pradipta K. Nayak ◽  
Jongsu Jang ◽  
Changhee Lee ◽  
Yongtaek Hong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Environmental Stability ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Li Doping ◽  
Stability Of Solution

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Zno Thin Film ◽  
Solution Processed

Environmental and operational stability of solution-processed 6,13-bis(triisopropyl-silylethynyl) pentacene thin film transistors

2009 ◽  
Vol 10 (3) ◽  
pp. 486-490 ◽  
Author(s):  
Sung Kyu Park ◽  
Devin A. Mourey ◽  
Jeong-In Han ◽  
John E. Anthony ◽  
Thomas N. Jackson
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Operational Stability ◽  
Solution Processed ◽  
Stability Of Solution

Effect of Li-doping on low temperature solution-processed indium–zinc oxide thin film transistors

2017 ◽  
Vol 641 ◽  
pp. 19-23 ◽  
Author(s):  
Soo-Yeun Han ◽  
Manh-Cuong Nguyen ◽  
An Hoang Thuy Nguyen ◽  
Jae- Won Choi ◽  
Jung-Youn Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Li Doping ◽  
Indium Zinc Oxide ◽  
Temperature Solution
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