Investigation of thin‐film Ni/single‐crystal SiC interface reaction

1987 ◽  
Vol 62 (9) ◽  
pp. 3747-3750 ◽  
Author(s):  
I. Ohdomari ◽  
S. Sha ◽  
H. Aochi ◽  
T. Chikyow ◽  
S. Suzuki
2008 ◽  
Vol 516 (16) ◽  
pp. 5344-5348 ◽  
Author(s):  
Nobuyuki Moronuki ◽  
Masayuki Kojima ◽  
Akira Kakuta

2019 ◽  
Vol 89 (2) ◽  
pp. 212
Author(s):  
В.В. Каминский ◽  
А.О. Лебедев ◽  
С.М. Соловьев ◽  
Н.В. Шаренкова

AbstractA heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.


RSC Advances ◽  
2020 ◽  
Vol 10 (67) ◽  
pp. 40658-40662
Author(s):  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Kazuya Nakata ◽  
Ken-ichi Katsumata ◽  
Akira Fujishima

An anatase-phase mesoporous titania thin film with a pseudo-single-crystal framework was facilely synthesized by an inexpensive chemical process.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.


2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita

1994 ◽  
Author(s):  
R. Miyagawa ◽  
H. Kubota ◽  
H. Kawamura ◽  
T. Fujiyoshi ◽  
M. Nagata ◽  
...  

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