Molecular Ion Beam Transportation for Low Energy Ion Implantation

2011 ◽  
Author(s):  
T. V. Kulevoy ◽  
G. N. Kropachev ◽  
D. N. Seleznev ◽  
P. E. Yakushin ◽  
R. P. Kuibeda ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Low Energy ◽  
Molecular Ion

Pathway Analysis of the Restrictedly Expressed Genes in Oryza Sativa Implanted by the Low-Energy Nitrogen Ion

2011 ◽  
Vol 108 ◽  
pp. 176-182
Author(s):  
Hui Yuan Ya ◽  
Wei Dong Wang ◽  
Qiu Fang Chen ◽  
Guang Yong Qin ◽  
Zhen Jiao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Mechanism ◽  
Current Knowledge ◽  
Biological Effects ◽  
Ion Beam ◽  
Low Energy ◽  
P Value ◽  
Rice Seedlings ◽  
Vigor Index ◽  
Nitrogen Ion

The current knowledge of the transcriptome is limited to understand the exact molecular mechanism of the ion-implantation biological effects on cereals. In order to investigating the overall characteristics of the transcript profiles associated with these puzzling biological effects. We used the Agilent Rice Oligo Microarray （4×44K）Genome Array to learn the molecular mechanism in rice responding to ion-implantation. Rice seeds were implanted by the Nitrogen ion beam and their vigor index was investigated at ten days after germination. Total RNAs was extracted from the rice seedlings at 96 hour after germination and hybridized by the genome genechip. The results of measuring of the vigor index showed that lower-dose implantation of the nitrogen ion beam (6×1017 N+/cm2) promoted the vigor index of the rice seedlings and the higher-dose implantation (9×1017 N+/cm2) damaged the rice seedlings because of the smaller vigor index than the control. The analysis of the genechip array showed that there were 982 transcripts expressed differentially (fold change＞2 and P value＜0.05) including 429 up-regulated transcripts and 553 down-regulated transcripts under the dose3 6×1017 N+/cm2. 30 out of the 553 down-regulated transcripts were involved in 48 pathways. 14 out of these 30 transcripts were associated with more than two interrelated pathways. Os04g0518400 (Phenylalanine ammonia-lyase 2 (PAL; EC 4.3.1.5; down-regulated 3.3 folds; p value=0.005) were involved in 7 pathways, Os07g0446800 (Hexokinase; dwon-regulated 2.8 folds; p value =0.006) were involved in 12 pathways, and Os02g0730000 (Mitochondrial aldehyde dehydrogenase ALDH2a; down-regulated 2.2 folds; p value=0.019) were involved in 13 pathways. These results revealed that down-regulated genes involving important pathways were compatible with the distinct cellular events in response to implantation of low-energy ion beam and supplied the first comprehensive and comparative molecular information for further understanding the mechanism underlying implantation of the low-energy nitrogen ion beam.

Low Energy Ion Implantation / Deposition as a Film Synthesis and Bonding Tool

1993 ◽  
Vol 316 ◽  
Author(s):  
André Anders ◽  
Simons Anders ◽  
Ian G. Brown ◽  
Igor C. Ivanov
Keyword(s):  
Ion Implantation ◽  
Plasma Deposition ◽  
Surface Film ◽  
Ion Beam ◽  
Low Energy ◽  
Vacuum Arc ◽  
Metallic Component ◽  
Wide Range ◽  
Film Synthesis ◽  
Atomic Mixing

ABSTRACTWe describe a novel means for the production of atomically-bonded thin films of a wide range of materials. The technique is a plasma and ion beam method involving synthesis of the desired surface film by plasma deposition and the simultaneous atomic mixing of the film into the substrate by low energy ion implantation from the surrounding plasma. Vacuum-arc-produced metal plasma is used for the metallic component of the film and gases can be added to form compound films. Multiple plasma generators can be used, and films of single metals, alloys, ceramics and multilayers can be formed. By repetitively pulse biasing the substrate during plasma deposition, the growing film is subjected to energetic ion bombardment, and direct and recoil ion implantation is induced. The depositing film is thereby atomically mixed to the substrate as it is formed. The films are atomically smooth, can be anywhere from a few monolayers to microns in thickness, and the interface or mixed transition zone can be tailored. Here we outline the basic plasma physics of the method and describe a number of novel surfaces which have been formed with excellent properties.

scholarly journals Molecular ion sources for low energy semiconductor ion implantation (invited)

2016 ◽  
Vol 87 (2) ◽  
pp. 02B702 ◽  
Author(s):  
A. Hershcovitch ◽  
V. I. Gushenets ◽  
D. N. Seleznev ◽  
A. S. Bugaev ◽  
S. Dugin ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Sources ◽  
Low Energy ◽  
Molecular Ion

Screening of a L-Lactic Acid Producing Strain of Lactobacillus Casei by Low-Energy Ion Implantation

2012 ◽  
Vol 455-456 ◽  
pp. 471-476 ◽  
Author(s):  
Shi Chang Li ◽  
Zhao Yang Zhu ◽  
Shao Bin Gu ◽  
Hong Xia Liu ◽  
Dong Dong Wang
Keyword(s):  
Lactic Acid ◽  
Ion Implantation ◽  
Mutation Rate ◽  
Lactobacillus Casei ◽  
Ion Beam ◽  
Low Energy ◽  
Screening Methods ◽  
Original Strain ◽  
Initial Screening ◽  
Acid Yield

Low-energy ion implantation is a new mutation source, which has the characteristic of light damage, high mutation rate, and a broad spectrum mutation. In order to obtain industrial strain with high L-(+)-lactic acid yield, the original strain Lactobacillus casei CICC6028 was mutated by nitrogen ion beam implantation. It was found that the original strain had a higher positive mutation rate when the output power was 10keV and the dose of N+ implantation was 50×2.6×1013 ions/cm2. The mutant N-2 was obtained for many times screening and its yield of L-(+)-lactic acid was 136 g/L which was improved by 38.8% compared with the original strain whose yield of L-(+)-lactic acid was 98g/L as the cultivation time was 120h. The initial screening methods were also studied in this work but it was found that the transparent halos method was unavailable, so the initial screening was performed by shake flask fermentation. HPLC chromatogram was used to analyse the purity of L-(+)-lactic acid that was produced by the mutant strain N-2, and the result indicated the main production of N-2 was L-(+)-lactic acid and there was no other acid almost.

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Low Energy ◽  
Exciton Transition ◽  
Transition Energies ◽  
Diffusion Of Vacancies ◽  
Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

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