An Approximate Method for Solving Unsteady Transitional and Rarefied Flow Regimes in Pulsed Pressure Chemical Vapor Deposition Process using the Quiet Direct Simulation Method
2020 ◽
Vol 16
(4)
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pp. 385-395
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Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
1996 ◽
Vol 169
(3)
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pp. 485-490
◽
1995 ◽
Vol 34
(Part 1, No. 6A)
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pp. 3216-3226
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1992 ◽
Vol 139
(8)
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pp. 2264-2273
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1992 ◽
Vol 31
(Part 2, No. 10A)
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pp. L1439-L1442
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