Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate

ABSTRACTA solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.

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Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled

Nanotechnology ◽

10.1088/1361-6528/ab3606 ◽

2019 ◽

Vol 30 (44) ◽

pp. 445702 ◽

Cited By ~ 3

Author(s):

Yu-Ling Hsieh ◽

Wen-Hsuan Su ◽

Cheng-Chun Huang ◽

Ching-Yuan Su

Keyword(s):

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Black Phosphorus ◽

Access Memory ◽

Solution Processed

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Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

IEEE Electron Device Letters ◽

10.1109/led.2015.2477163 ◽

2015 ◽

Vol 36 (11) ◽

pp. 1138-1141 ◽

Cited By ~ 13

Author(s):

Ji Chen ◽

Kuan-Chang Chang ◽

Ting-Chang Chang ◽

Tsung-Ming Tsai ◽

Chih-Hung Pan ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Buffering Effect

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Effects of erbium doping of indium tin oxide electrode in resistive random access memory

Applied Physics Express ◽

10.7567/apex.9.034202 ◽

2016 ◽

Vol 9 (3) ◽

pp. 034202 ◽

Cited By ~ 5

Author(s):

Po-Hsun Chen ◽

Kuan-Chang Chang ◽

Ting-Chang Chang ◽

Tsung-Ming Tsai ◽

Chih-Hung Pan ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Oxide Electrode ◽

Erbium Doping ◽

Access Memory ◽

Indium Tin Oxide Electrode

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Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2609642 ◽

2016 ◽

Vol 63 (11) ◽

pp. 4288-4294 ◽

Cited By ~ 3

Author(s):

Po-Hsun Chen ◽

Kuan-Chang Chang ◽

Ting-Chang Chang ◽

Tsung-Ming Tsai ◽

Chih-Hung Pan ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory

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Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

RSC Advances ◽

10.1039/c7ra01104k ◽

2017 ◽

Vol 7 (19) ◽

pp. 11585-11590 ◽

Cited By ~ 9

Author(s):

Cong Ye ◽

Jia-Ji Wu ◽

Chih-Hung Pan ◽

Tsung-Ming Tsai ◽

Kuan-Chang Chang ◽

...

Keyword(s):

Supercritical Fluid ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Hafnium Oxide ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Resistive Switching Memory ◽

Ito Electrode

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

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