X‐ray study of Kr and Xe adsorbed on the basal plane of nickel chloride

1988 ◽  
Vol 88 (1) ◽  
pp. 451-456 ◽  
Author(s):  
K. Morishige ◽  
M. Hanayama ◽  
S. Kittaka
Keyword(s):  
2000 ◽  
Vol 628 ◽  
Author(s):  
T.N. Blanton ◽  
D. Majumdar ◽  
S.M. Melpolder

ABSTRACTClay-polymer nanoparticulate composite materials are evaluated by the X-ray diffraction technique. The basal plane spacing provided information about the degree of intercalation and exfoliation of the 2: 1 layered clay structure. Both intercalation and exfoliation are controlled by the identity of the polymer and the clay:polymer ratio.


2008 ◽  
Vol 59 (9) ◽  
Author(s):  
Violeta Vasilache ◽  
Gheorghe Gutt ◽  
Traian Vasilache

The electrochemical deposition of zinc and combinations with elements of the 8th group of the Periodic System (nickel, cobalt, iron) have good properties for anticorrosive protection, compared with pure zinc. For steel pieces, these films delay apparition and formation of white and red iron oxide. We used solutions with different concentrations of zinc chloride, nickel chloride and potassium chloride. To analyze the results we used the optic microscope and the X-ray diffraction.


2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.


CrystEngComm ◽  
2017 ◽  
Vol 19 (27) ◽  
pp. 3844-3849 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Rongkun Wang ◽  
Xiangang Xu

Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).


1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.


CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6957-6962 ◽  
Author(s):  
Xianglong Yang ◽  
Jinying Yu ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
...  

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.


2011 ◽  
Vol 117-119 ◽  
pp. 77-80
Author(s):  
Huai Yao ◽  
Guang Lin Zhu ◽  
Yong Zhi Wang

As a surface technology, electroless plating is applied to almost every industry branch. To improve the wettability of SiC powder and metal, the surface of SiC powders was plated with a Ni plating in the basic solution according to the reaction theory of electroless plating. The main salting was nickel chloride, and the reducing agent was hydrazine hydrate. The plating velocity, phase transformation and microstructurewere investigated using XRD and SEM. The results show that the SiC powders had no increasing weight and no reaction can occur when the pH below 8.5. when the pH value was between 10 and 11, the weight gain of powders closed to the theoretical value, the Ni peaks in X-ray diffraction patterns of powders was relatively strong, the SiC coating surface was composed of granular, cellular and globe-like Ni, the substrate was covered of Ni plating completely. When the pH value was above 11, the gas production was becoming more pronounced and the reaction speed increasing with the increased of the pH value, the time from deep blue to colorless of solution started to drop off, the Ni(OH)2peaks in X-ray diffraction patterns of powders have already begun to emerged and a small amount of nickel films was generated.


2009 ◽  
Vol 42 (4) ◽  
pp. 673-680 ◽  
Author(s):  
Valeriy A. Luchnikov ◽  
Dimitri A. Ivanov

The diffraction peak position, width and intensity distribution are calculated for the case of a helicoidally twisted crystalline lamella, both analytically and numerically. It is shown that the diffraction peak broadening depends on the orientation of the corresponding reciprocal-space vector with respect to the helicoid axis and the normal to the lamellar basal plane. The equatorial peaks, which are close to the normal direction to the lamellar basal plane, are characterized by the highest azimuthal width. By contrast, the reflections positioned close to the lamellar surface have the smallest azimuthal width. For non-equatorial peaks in the proximity of the twisting axis the intensity has an unusual asymmetric shape. The shape of the microbeam, as well as its position and direction with respect to the lamella, influences the shape of the diffraction peaks in reciprocal space and their appearance in two-dimensional diffractograms. The proposed approach can be useful, for example, for the interpretation of microbeam diffractograms of banded polymer spherulites.


1995 ◽  
Vol 48 (12) ◽  
pp. 1933 ◽  
Author(s):  
CT Abrahams ◽  
GB Deacon ◽  
CM Forsyth ◽  
WC Patalinghug ◽  
BW Skelton ◽  
...  

With the facile displacement being utilized of thf from Yb(pin)2(thf)4 (pin = 2-phenylindol-1-yl, thf = tetrahydrofuran) in toluene solution, the complexes Yb(pin)2(dme)2 (dme = 1,2- dimethoxyethane), Yb(pin)2 (tmen)(tmen = N,N,N′,N′-tetramethylethane-1,2-diamine) and Yb(pin)2(diglyme)(thf) (diglyme = bis(2-methoxyethyl) ether) have been prepared from the respective ligands and Yb(pin)2(thf)4. Yb(pin)2 (diglyme) (thf) [monoclinic, space group P 21 /c, a 15.35(1), b 16.179(5), c 14.45(2) Ǻ, β 107.51(8)°, Z 4, R 0.044 for 2956 (I > 3σ(I)) 'observed' reflections] has a monomeric six-coordinate structure with transoid nitrogen donor atoms, N-Yb-N 143.6(4)° and an irregular coordination polyhedron described as either a distorted trigonal prism or a monocapped square pyramid. Attempted crystallization of Yb(pin)2 (thf) by partial desolvation of Yb(pin)2(thf)4 in hot toluene, containing a trace of dme, gave a mixture of red Yb(pin)2(thf) and orange [Yb(pin)2(dme)]2. The latter was independently synthesized by partial desolvation of Yb(pin)2(dme)2 in toluene. An X-ray crystal structure showed [Yb(pin)2(dme)]2 [monoclinic, space group P 21/c, a 11 .614(2), b 15.945(7), c 15.327(4) Ǻ, β 110.19(2)°, Z 2 dimers, R 0.070 for 2314 (I ≥ 3σ(I)) 'observed' reflections] to be a dimer with two bridging pin ligands, coordinated through nitrogen only. There is an approximately square pyramidal five-coordinate ytterbium environment with an apical dme oxygen, and with two bridging nitrogens, a terminal nitrogen, and a dme oxygen in the basal plane.


2001 ◽  
Vol 34 (1) ◽  
pp. 20-26 ◽  
Author(s):  
W. M. Vetter ◽  
M. Dudley

Contrast is associated with micropipes in X-ray topographs of SiC crystals obtained with prismatic reflections, representing an apparent violation of theg·b= 0 invisibility criterion. This is explained as a population of basal-plane dislocations with Burgers vectors of the setb= {\textstyle{1 \over 3}}〈11{\bar{2}}0〉 that occur in a high density within a few micrometers of the micropipes, below the resolution of X-ray topography. These basal-plane dislocations could be observed under an electron microscope. The presence of the surfaces of the micropipes influences the dislocation images in the topographs taken with prismatic reflections, often resulting in a band of light contrast along the axes of the micropipes.


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