scholarly journals Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu2O) thin-films

2012 ◽  
Vol 112 (8) ◽  
pp. 084508 ◽  
Author(s):  
Sin Cheng Siah ◽  
Yun Seog Lee ◽  
Yaron Segal ◽  
Tonio Buonassisi

2021 ◽  
pp. 150020
Author(s):  
K.N.D. Bandara ◽  
K.M.D.C. Jayathilaka ◽  
D.P. Dissanayake ◽  
J.K.D.S. Jayanetti


Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1011 ◽  
Author(s):  
Negar Dasineh Khiavi ◽  
Reza Katal ◽  
Saeideh Kholghi Eshkalak ◽  
Saeid Masudy-Panah ◽  
Seeram Ramakrishna ◽  
...  

A high recombination rate and low charge collection are the main limiting factors of copper oxides (cupric and cuprous oxide) for the photocatalytic degradation of organic pollutants. In this paper, a high performance copper oxide photocatalyst was developed by integrating cupric oxide (CuO) and cuprous oxide (Cu2O) thin films, which showed superior performance for the photocatalytic degradation of methylene blue (MB) compared to the control CuO and Cu2O photocatalyst. Our results show that a heterojunction photocatalyst of CuO–Cu2O thin films could significantly increase the charge collection, reduce the recombination rate, and improve the photocatalytic activity.



2016 ◽  
Vol 183 (11) ◽  
pp. 2983-2989 ◽  
Author(s):  
Pavan K. Pagare ◽  
A. P. Torane


2015 ◽  
Vol 40 (1) ◽  
pp. 112-123 ◽  
Author(s):  
Ying Yang ◽  
Juan Han ◽  
Xiaohui Ning ◽  
Jinzhan Su ◽  
Jinwen Shi ◽  
...  


2003 ◽  
Vol 82 (7) ◽  
pp. 1060-1062 ◽  
Author(s):  
Y. Okamoto ◽  
S. Ishizuka ◽  
S. Kato ◽  
T. Sakurai ◽  
N. Fujiwara ◽  
...  


2010 ◽  
Vol 34-35 ◽  
pp. 1421-1424
Author(s):  
Fei Hu ◽  
Zhi Yu He ◽  
Xiao Hong Li ◽  
Yue Hui Hu

Cuprous oxide films are successfully electrodeposited through the reduction of cupric ions in alkaline and acid electrolytes. The effect of electrodeposition parameters on the optical band gaps of Cu2O films is investigated using UV-vis spectroscopy. It is found that the optical transmittances and the band gaps of the Cu2O thin films are strongly influenced by the electrodeposition bath, the temperature, the current density, and the pH value. The band gaps are varied from 1.80 eV to 2.43 eV with different electrodeposition parameters.



Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 3038 ◽  
Author(s):  
Ørnulf Nordseth ◽  
Raj Kumar ◽  
Kristin Bergum ◽  
Irinela Chilibon ◽  
Sean Erik Foss ◽  
...  

Cuprous oxide (Cu2O) is a p-type semiconductor with high optical absorption and a direct bandgap of about 2.1 eV, making it an attractive material for photovoltaic applications. For a high-performance photovoltaic device, the formation of low-resistivity contacts on Cu2O thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of Cu2O in order to increase the carrier concentration. In this work, nitrogen-doped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. By adding N2 gas during the deposition process, a nitrogen concentration of up to 2.3 × 1021 atoms/cm3 in the Cu2O thin films was achieved, as determined from secondary ion mass spectroscopy measurements. The effect of nitrogen doping on the structural, optical, and electrical properties of the Cu2O thin films was investigated. X-ray diffraction measurements suggest a preservation of the Cu2O phase for the nitrogen doped thin films, whereas spectrophotometric measurements show that the optical properties were not significantly altered by incorporation of nitrogen into the Cu2O matrix. A significant conductivity enhancement was achieved for the nitrogen-doped Cu2O thin films, based on Hall effect measurements, i.e., the hole concentration was increased from 4 × 1015 to 3 × 1019 cm−3 and the resistivity was reduced from 190 to 1.9 Ω⋅cm by adding nitrogen to the Cu2O thin films.



Vacuum ◽  
2017 ◽  
Vol 141 ◽  
pp. 296-306 ◽  
Author(s):  
S. Dolai ◽  
S. Das ◽  
S. Hussain ◽  
R. Bhar ◽  
A.K. Pal




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