Quantitative investigation of magnetic domains with in-plane and out-of-plane easy axes in GaMnAs films by Hall effect

2013 ◽  
Vol 113 (17) ◽  
pp. 17C706 ◽  
Author(s):  
Sangyeop Lee ◽  
Hakjoon Lee ◽  
Taehee Yoo ◽  
Sanghoon Lee ◽  
X. Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Magnetic Domains ◽  
Quantitative Investigation ◽  
Out Of Plane

Dynamics of Dzyaloshinskii Domain Walls Driven by Spin Hall Effect in the Presence of Magnetic Fields

SPIN ◽  
2017 ◽  
Vol 07 (01) ◽  
pp. 1740004
Author(s):  
Chengkun Song ◽  
Chendong Jin ◽  
Jianbo Wang ◽  
Qingfang Liu
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Spin Hall Effect ◽  
Micromagnetic Simulations ◽  
Out Of Plane ◽  
Device Applications ◽  
Metal Bilayers ◽  
The Magnetic Field

Current-induced domain wall motion (CIDWM) in perpendicularly magnetized materials exhibits large potential in spintronic device applications. The Dzyaloshinskii domain walls (DWs) are nucleated in ultrathin ferromagnetic/heavy-metal bilayers with high perpendicular magnetocrystalline anisotropy (PMA) in the presence of interfacial Dzyaloshinskii–Moriya interaction (DMI). Here, we investigate the effect of magnetic fields on Dzyaloshinskii DWs driven by spin Hall effect (SHE) by means of micromagnetic simulations. We find that magnetic fields can modify the dynamics of Dzyaloshinskii DW. When applying out-of-plane magnetic fields, the velocity of Dzyaloshinskii DWs increases when the field-driven and current-driven DW motion are in same direction, while it decreases with opposite direction. In the case of in-plane longitudinal magnetic fields, Dzyaloshinskii DW velocity increases when the direction of the magnetic field and Dzyaloshinskii DW propagation direction are same, and it decreases when applying opposite in-plane magnetic fields. These manifestations may offer a new method for manipulating Dzyaloshinskii DWs and promise applications in DW-based nanodevices.

Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5533-5542
Author(s):  
Baozeng Zhou
Keyword(s):  
Hall Effect ◽  
Spin Splitting ◽  
Promising Candidate ◽  
Spintronic Devices ◽  
Spin Direction ◽  
Band Splitting ◽  
Out Of Plane ◽  
Valley Polarization ◽  
Valley Hall Effect ◽  
Spin Fet

Coexistence of Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K′ valleys (out-of-plane spin direction) makes the FRS AgBiP2Te6 monolayer a promising candidate for 2D spin FET and spin/valley Hall effect devices.

scholarly journals Efficient Injection and Detection of Out-of-Plane Spins via the Anomalous Spin Hall Effect in Permalloy Nanowires

Nano Letters ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 5633-5639 ◽  
Author(s):  
Kumar Sourav Das ◽  
Jing Liu ◽  
Bart J. van Wees ◽  
Ivan J. Vera-Marun
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Out Of Plane

scholarly journals Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 675
Author(s):  
Gernot Heine ◽  
Wolfgang Lang ◽  
Roman Rössler ◽  
Johannes D. Pedarnig
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Hall Effect ◽  
Normal State ◽  
Measurement Method ◽  
High Temperature Superconductor ◽  
Hall Voltage ◽  
Temperature Dependent ◽  
Out Of Plane ◽  
Anisotropic Transport

The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa2Cu3O7-δ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO3 substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results confirm previous measurements on single crystals by an entirely different measurement method and demonstrate that vicinal thin films might be also useful for investigations of other layered nanomaterials.

scholarly journals Quantitative Investigation of Brittle Out-of-plane Fracture in X70 Pipeline Steel

2014 ◽  
Vol 3 ◽  
pp. 1149-1154 ◽  
Author(s):  
Franck Tankoua ◽  
Jérôme Crépin ◽  
Philippe Thibaux ◽  
Steven Cooreman ◽  
Anne-Françoise Gourgues-Lorenzon
Keyword(s):  
Pipeline Steel ◽  
Quantitative Investigation ◽  
X70 Pipeline Steel ◽  
Out Of Plane

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

2017 ◽  
Vol 897 ◽  
pp. 111-114 ◽  
Author(s):  
Martin Hauck ◽  
Julietta Weisse ◽  
Johannes Lehmeyer ◽  
Gregor Pobegen ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Hall Effect ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Drain Current ◽  
Charge Carrier Density ◽  
Interface Traps ◽  
Quantitative Investigation ◽  
Inversion Charge ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

2013 ◽  
Vol 378 ◽  
pp. 337-341 ◽  
Author(s):  
Sangyeop Lee ◽  
Hakjoon Lee ◽  
Taehee Yoo ◽  
Sanghoon Lee ◽  
X. Liu ◽  
...  
Keyword(s):  
Magnetic Domains ◽  
Plane Anisotropy ◽  
Out Of Plane

Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3

2014 ◽  
Vol 115 (5) ◽  
pp. 053709 ◽  
Author(s):  
Netanel Naftalis ◽  
Noam Haham ◽  
Jason Hoffman ◽  
Matthew S. J. Marshall ◽  
C. H. Ahn ◽  
...  
Keyword(s):  
Hall Effect ◽  
Epitaxial Film ◽  
Anisotropic Magnetoresistance ◽  
Planar Hall Effect ◽  
Out Of Plane

scholarly journals Soft X-ray magnetic scattering studies of 3D magnetic morphology along buried interfaces in NiFe/CoPd/NiFe nanostructures

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Samuel Flewett ◽  
Thiago J. A. Mori ◽  
Alexandra Ovalle ◽  
Simón Oyarzún ◽  
Antonio Ibáñez ◽  
...  
Keyword(s):  
Data Storage ◽  
Structural Information ◽  
Magnetic Scattering ◽  
Scattering Data ◽  
X Rays ◽  
Magnetic Domains ◽  
Micromagnetic Simulations ◽  
Community Needs ◽  
Buried Interfaces ◽  
Out Of Plane

Abstract With the continuing interest in new magnetic materials for sensor devices and data storage applications, the community needs reliable and sensitive tools for the characterization of such materials. Soft X-rays tuned to elemental absorption edges are a depth and element sensitive probe of magnetic structure at the nanoscale, and scattering measurements have the potential to provide 3D magnetic structural information of the material. In this work we develop a methodology in transmission geometry that allows one to probe the spatial distribution of the magnetization along the different layers of magnetic heterostructures. We study the in-plane/out-of-plane transition of magnetic domains in multilayer thin film systems consisting of two layers of NiFe top and bottom, and a 50 repeat Co/Pd multilayer in the centre. The experimental data are analysed by simulating scattering data starting from micromagnetic simulations, and we find that the out of plane domains of the Co/Pd multilayer intrude into the NiFe layers to a greater extent than would be expected from micromagnetic simulations performed using the standard magnetically isotropic input parameters for the NiFe layers.

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