Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor

2013 ◽  
Vol 102 (19) ◽  
pp. 192912 ◽  
Author(s):  
Ya-Liang Yang ◽  
Tai-Fa Young ◽  
Ting-Chang Chang ◽  
Fu-Yen Shen ◽  
Jia-Haw Hsu ◽  
...  
2013 ◽  
Vol 34 (8) ◽  
pp. 1056-1058 ◽  
Author(s):  
Ya-Liang Yang ◽  
Tai-Fa Young ◽  
Ting-Chang Chang ◽  
Jia-Haw Hsu ◽  
Tsung-Ming Tsai ◽  
...  

2004 ◽  
Vol 812 ◽  
Author(s):  
Charlie Jun Zhai ◽  
Paul R. Besser ◽  
Frank Feustel

AbstractThe damascene fabrication method and the introduction of low-K dielectrics present a host of reliability challenges to Cu interconnects and fundamentally change the mechanical stress state of Cu lines. In order to capture the effect of individual process steps on the stress evolution in the BEoL (Back End of Line), a process-oriented finite element modeling (FEM) approach was developed. In this model, the complete stress history at any step of BEoL can be simulated as a dual damascene Cu structure is fabricated. The inputs to the model include the temperature profile during each process step and materials constants. The modeling results are verified in two ways: through wafer-curvature measurement during multiple film deposition processes and with X-Ray diffraction to measure the mechanical stress state of the Cu interconnect lines fabricated using 0.13um CMOS technology. The Cu line stress evolution is simulated during the process of multi-step processing for a dual damascene Cu/low-K structure. It is shown that the in-plane stress of Cu lines is nearly independent of subsequent processes, while the out-of-plane stress increases considerably with the subsequent process steps.


We know the mechanical properties of silicon. However, little is known about the mechanical properties of silicon solar cells. Modeling is widely used in the study of solar cells. This article discusses in detail the effect of mechanical stress on solar cells. To do this, a model of the solar cell was created and simulated at Comsol Multiphysics. The results were presented visually and graphically. The results were tested for relevance and accuracy


2012 ◽  
Vol 2012 (1) ◽  
pp. 000967-000974 ◽  
Author(s):  
Takashi Hisada ◽  
Yasuharu Yamada ◽  
Junko Asai ◽  
Toyohiro Aoki

As data transmission rate increases, flip chip plastic ball grid array (FCPBGA) utilizing a interposer for multiple chips is gaining popularity because of high electrical performance, ease of chip design, ease of thermal management with thermal lid, etc. The authors assessed package design configuration and key design elements for two chips application assuming 1600 signal I/Os for logic and 800 signal I/Os for memory. Then, we studied warpage behavior of the interposer, and mechanical stress of solder interconnections and low-k dielectric layer under controlled collapse chip connection (C4) pad. We set three different mount process assumptions for chip to interposer and interposer to base organic substrate. The mount process assumptions are (1) two pass reflow of chip to interposer first, then interposer to base organic substrate, (2) reversed sequence of two pass reflow which is interposer to base organic substrate first, then chip to interposer, (3) one pass reflow of chip, interposer and base organic substrate all together. We also set three different interposer material assumptions of Si, glass and organic in this study. We analyzed warpage behavior and mechanical stress using finite element method (FEM) modeling technique with a set of combinations of coefficient of thermal expansion (CTE) and elastic modulus of the interposers. The study also includes an analysis for conventional multi-chip-module (MCM) FCPBGA as a reference. We show the analysis results of interposer warpage, first principal stress at low-k dielectric layer under C4 pad and von Mises stress at solder interconnections of chip joining and interposer joining.


1976 ◽  
Vol 58 (1) ◽  
pp. 169-177 ◽  
Author(s):  
I. Eisele ◽  
H. Gesch ◽  
G. Dorda

2013 ◽  
Vol 811 ◽  
pp. 23-27
Author(s):  
L. Douadji ◽  
Fethi Benkhenafou ◽  
Wei Wei Du ◽  
A. Tcharkhtchi ◽  
M. Madani

The objective of this work is the study of the mechanical stress influence on the structural evolution. In particular, we studied the initiation and the plasticity mechanisms propagation of a semicrystalline polymer at small scales. The material is polylactic acid (PLA) film with average molar mass of 199 kg/mole and a thickness of 200 μm. The lamellate morphology of this material is very heterogeneous: in given area and packages of different orientation plates, they are spherulites α and β which have a different mechanical behaviour on a lamellate scale.


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