Depth profiling of nitrogen within 15N-incorporated nano-crystalline diamond thin films

2013 ◽  
Vol 103 (13) ◽  
pp. 131602 ◽  
Author(s):  
E. Garratt ◽  
S. AlFaify ◽  
D. P. Cassidy ◽  
A. Dissanayake ◽  
D. C. Mancini ◽  
...  
2020 ◽  
Vol 242 ◽  
pp. 146968
Author(s):  
R.W. Thoka ◽  
S.J. Moloi ◽  
Sekhar C. Ray ◽  
W.F. Pong ◽  
I.-N. Lin

2012 ◽  
Vol 14 (10) ◽  
pp. 905-908
Author(s):  
Liwei Xiong ◽  
Jianhua Wang ◽  
Fan Liu ◽  
Weidong Man ◽  
Jun Weng ◽  
...  

Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.


Author(s):  
Amal Ben Hadj Mabrouk ◽  
Christophe Licitra ◽  
Antoine Chateauminois ◽  
Marc Veillerot

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