scholarly journals High temperature photoelectron emission and surface photovoltage in semiconducting diamond

2014 ◽  
Vol 105 (6) ◽  
pp. 061602 ◽  
Author(s):  
G. T. Williams ◽  
S. P. Cooil ◽  
O. R. Roberts ◽  
S. Evans ◽  
D. P. Langstaff ◽  
...  
1991 ◽  
Vol 30 (Part 2, No. 8A) ◽  
pp. L1409-L1411 ◽  
Author(s):  
T. P. Humphreys ◽  
J. V. Labrasca ◽  
R. J. Nemanich ◽  
K. Das ◽  
J. B. Posthill

2016 ◽  
Vol 109 (5) ◽  
pp. 051106 ◽  
Author(s):  
M. Matys ◽  
B. Adamowicz ◽  
Z. R. Zytkiewicz ◽  
A. Taube ◽  
R. Kruszka ◽  
...  

2008 ◽  
Vol 78 (3) ◽  
Author(s):  
H. M. Zhang ◽  
Kazuyuki Sakamoto ◽  
G. V. Hansson ◽  
R. I. G. Uhrberg

2000 ◽  
Vol 4 (1) ◽  
pp. 45-48 ◽  
Author(s):  
Eugeniusz Klugmann ◽  
Michal Polowczyk

1992 ◽  
Vol 270 ◽  
Author(s):  
V. Venkatesan ◽  
D.G. Thompson ◽  
K. Das

ABSTRACTHigh temperature rectifying contacts have been fabricated on naturally occurring lib semiconducting diamond crystals using highly doped Si. Polycrystalline Si deposited by low pressure chemical vapor deposition (LPCVD) and amorphous Si deposited by sputtering were investigated. Following LPCVD deposition, the polycrystalline Si filn was doped with P by solid state diffusion at a temperature of 900°C using a POCI3 source. Boron doped and As doped Si films were deposited by sputtering from highly doped Si targets. Current-voltage measurements were performed on the fabricated P doped, B doped and As doped Si contacts from room temperature up to ∼400∼C. In all cases, the contacts yielded excellent rectification in the temperature range investigated. Current conduction in doped Si/diamond systems appears to be space charge limited. The position and concentration of deep levels in a natural lib diamond crystal have been determined from an analysis of space charge limited current-voltage (I-V) characteristics.


Author(s):  
M.S. Grewal ◽  
S.A. Sastri ◽  
N.J. Grant

Currently there is a great interest in developing nickel base alloys with fine and uniform dispersion of stable oxide particles, for high temperature applications. It is well known that the high temperature strength and stability of an oxide dispersed alloy can be greatly improved by appropriate thermomechanical processing, but the mechanism of this strengthening effect is not well understood. This investigation was undertaken to study the dislocation substructures formed in beryllia dispersed nickel alloys as a function of cold work both with and without intermediate anneals. Two alloys, one Ni-lv/oBeo and other Ni-4.5Mo-30Co-2v/oBeo were investigated. The influence of the substructures produced by Thermo-Mechanical Processing (TMP) on the high temperature creep properties of these alloys was also evaluated.


Author(s):  
B. J. Hockey

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.


Author(s):  
D. R. Clarke ◽  
G. Thomas

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.


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